8T SRAM have been considered for robust subthreshold SRAM design. Their subthreshold operation was successfully demonstrated through real silicon measurements. However, Monte-Carlo simulation results show that this SRAM still may not deliver sufficient reliability in subthreshold operation. In this work, we overcome this problem by properly sizing SRAM transistors. We utilize short-channel Vt roll-off and inverse narrow-width effect for the sizing. Since minimum geometry transistors are employed in the SRAM bit-cell, these effects can have profound impact on SRAM stability. Hence, the proposed approach provides an efficient way to increase the yield of the 8T subthreshold SRAMs.
Bibliographical noteFunding Information:
This work was supported in part by the National Research Foundation (NRF) of Korea (NRF-2013R1A1A1005832). This research was also supported in part by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2015R1D1A1A01058856).
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering