Subthreshold 8t sram sizing utilizing short-channel vt roll-off and inverse narrow-width effect

Ik Joon Chang; Joon Sung Yang

doi:10.1587/elex.13.20160020

Subthreshold 8t sram sizing utilizing short-channel v_t roll-off and inverse narrow-width effect

Ik Joon Chang, Joon Sung Yang

College of Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

8T SRAM have been considered for robust subthreshold SRAM design. Their subthreshold operation was successfully demonstrated through real silicon measurements. However, Monte-Carlo simulation results show that this SRAM still may not deliver sufficient reliability in subthreshold operation. In this work, we overcome this problem by properly sizing SRAM transistors. We utilize short-channel V_t roll-off and inverse narrow-width effect for the sizing. Since minimum geometry transistors are employed in the SRAM bit-cell, these effects can have profound impact on SRAM stability. Hence, the proposed approach provides an efficient way to increase the yield of the 8T subthreshold SRAMs.

Original language	English
Article number	20160020
Journal	ieice electronics express
Volume	13
Issue number	8
DOIs	https://doi.org/10.1587/elex.13.20160020
Publication status	Published - 2016 Mar 16

Bibliographical note

Funding Information:
This work was supported in part by the National Research Foundation (NRF) of Korea (NRF-2013R1A1A1005832). This research was also supported in part by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2015R1D1A1A01058856).

Publisher Copyright:
© IEICE 2016.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1587/elex.13.20160020

Cite this

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title = "Subthreshold 8t sram sizing utilizing short-channel vt roll-off and inverse narrow-width effect",

abstract = "8T SRAM have been considered for robust subthreshold SRAM design. Their subthreshold operation was successfully demonstrated through real silicon measurements. However, Monte-Carlo simulation results show that this SRAM still may not deliver sufficient reliability in subthreshold operation. In this work, we overcome this problem by properly sizing SRAM transistors. We utilize short-channel Vt roll-off and inverse narrow-width effect for the sizing. Since minimum geometry transistors are employed in the SRAM bit-cell, these effects can have profound impact on SRAM stability. Hence, the proposed approach provides an efficient way to increase the yield of the 8T subthreshold SRAMs.",

author = "Chang, {Ik Joon} and Yang, {Joon Sung}",

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