Subwavelength photocathodes via metal-assisted chemical etching of GaAs for solar hydrogen generation

Keorock Choi, Kyunghwan Kim, In Kyu Moon, Jangwon Bang, Jungwoo Oh

Research output: Contribution to journalArticle

Abstract

MacEtch allows subwavelength-structured (SWS) texturing on the GaAs surface without compromising crystallinity. The current density increases greatly, which is directly due to the reduction in the reflectance. Photons absorbed under reduced light reflectance are less affected by the charge recombination arising from crystal defects. The catalytic metal remaining after MacEtch serves as a catalyst for water splitting and increases the open-circuit potentials of the SWS GaAs photocathodes. The SWS GaAs not only amplifies the absorption of light, but also improves the collection of deeply generated photons at long wavelengths. The solar-weighted reflectance (SWR) of SWS GaAs is 6.6%, which was much lower than the 39.0% of bare GaAs. The light-limited photocurrent density (LLPC) increased by approximately 90% and the tafel slope improved as etching progressed. The external quantum efficiency was as high as 80%, especially at long wavelengths, after MacEtch. SWS GaAs photocathodes fabricated using MacEtch significantly reduce reflectance and recombination loss, thereby improving the key performance of PEC for hydrogen production. This technology can fully utilize the high absorption rate and carrier mobility of GaAs and is applicable to various photoelectric conversion device performance enhancements.

Original languageEnglish
Pages (from-to)15367-15373
Number of pages7
JournalNanoscale
Volume11
Issue number32
DOIs
Publication statusPublished - 2019 Aug 28

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Photocathodes
Hydrogen
Etching
Metals
Photons
Wavelength
Texturing
Crystal defects
Carrier mobility
Hydrogen production
Photocurrents
Quantum efficiency
Current density
Catalysts
gallium arsenide
Networks (circuits)
Water

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Choi, Keorock ; Kim, Kyunghwan ; Moon, In Kyu ; Bang, Jangwon ; Oh, Jungwoo. / Subwavelength photocathodes via metal-assisted chemical etching of GaAs for solar hydrogen generation. In: Nanoscale. 2019 ; Vol. 11, No. 32. pp. 15367-15373.
@article{a9cc0e9edc4f445fb0d522d726606890,
title = "Subwavelength photocathodes via metal-assisted chemical etching of GaAs for solar hydrogen generation",
abstract = "MacEtch allows subwavelength-structured (SWS) texturing on the GaAs surface without compromising crystallinity. The current density increases greatly, which is directly due to the reduction in the reflectance. Photons absorbed under reduced light reflectance are less affected by the charge recombination arising from crystal defects. The catalytic metal remaining after MacEtch serves as a catalyst for water splitting and increases the open-circuit potentials of the SWS GaAs photocathodes. The SWS GaAs not only amplifies the absorption of light, but also improves the collection of deeply generated photons at long wavelengths. The solar-weighted reflectance (SWR) of SWS GaAs is 6.6{\%}, which was much lower than the 39.0{\%} of bare GaAs. The light-limited photocurrent density (LLPC) increased by approximately 90{\%} and the tafel slope improved as etching progressed. The external quantum efficiency was as high as 80{\%}, especially at long wavelengths, after MacEtch. SWS GaAs photocathodes fabricated using MacEtch significantly reduce reflectance and recombination loss, thereby improving the key performance of PEC for hydrogen production. This technology can fully utilize the high absorption rate and carrier mobility of GaAs and is applicable to various photoelectric conversion device performance enhancements.",
author = "Keorock Choi and Kyunghwan Kim and Moon, {In Kyu} and Jangwon Bang and Jungwoo Oh",
year = "2019",
month = "8",
day = "28",
doi = "10.1039/c9nr03870a",
language = "English",
volume = "11",
pages = "15367--15373",
journal = "Nanoscale",
issn = "2040-3364",
publisher = "Royal Society of Chemistry",
number = "32",

}

Subwavelength photocathodes via metal-assisted chemical etching of GaAs for solar hydrogen generation. / Choi, Keorock; Kim, Kyunghwan; Moon, In Kyu; Bang, Jangwon; Oh, Jungwoo.

In: Nanoscale, Vol. 11, No. 32, 28.08.2019, p. 15367-15373.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Subwavelength photocathodes via metal-assisted chemical etching of GaAs for solar hydrogen generation

AU - Choi, Keorock

AU - Kim, Kyunghwan

AU - Moon, In Kyu

AU - Bang, Jangwon

AU - Oh, Jungwoo

PY - 2019/8/28

Y1 - 2019/8/28

N2 - MacEtch allows subwavelength-structured (SWS) texturing on the GaAs surface without compromising crystallinity. The current density increases greatly, which is directly due to the reduction in the reflectance. Photons absorbed under reduced light reflectance are less affected by the charge recombination arising from crystal defects. The catalytic metal remaining after MacEtch serves as a catalyst for water splitting and increases the open-circuit potentials of the SWS GaAs photocathodes. The SWS GaAs not only amplifies the absorption of light, but also improves the collection of deeply generated photons at long wavelengths. The solar-weighted reflectance (SWR) of SWS GaAs is 6.6%, which was much lower than the 39.0% of bare GaAs. The light-limited photocurrent density (LLPC) increased by approximately 90% and the tafel slope improved as etching progressed. The external quantum efficiency was as high as 80%, especially at long wavelengths, after MacEtch. SWS GaAs photocathodes fabricated using MacEtch significantly reduce reflectance and recombination loss, thereby improving the key performance of PEC for hydrogen production. This technology can fully utilize the high absorption rate and carrier mobility of GaAs and is applicable to various photoelectric conversion device performance enhancements.

AB - MacEtch allows subwavelength-structured (SWS) texturing on the GaAs surface without compromising crystallinity. The current density increases greatly, which is directly due to the reduction in the reflectance. Photons absorbed under reduced light reflectance are less affected by the charge recombination arising from crystal defects. The catalytic metal remaining after MacEtch serves as a catalyst for water splitting and increases the open-circuit potentials of the SWS GaAs photocathodes. The SWS GaAs not only amplifies the absorption of light, but also improves the collection of deeply generated photons at long wavelengths. The solar-weighted reflectance (SWR) of SWS GaAs is 6.6%, which was much lower than the 39.0% of bare GaAs. The light-limited photocurrent density (LLPC) increased by approximately 90% and the tafel slope improved as etching progressed. The external quantum efficiency was as high as 80%, especially at long wavelengths, after MacEtch. SWS GaAs photocathodes fabricated using MacEtch significantly reduce reflectance and recombination loss, thereby improving the key performance of PEC for hydrogen production. This technology can fully utilize the high absorption rate and carrier mobility of GaAs and is applicable to various photoelectric conversion device performance enhancements.

UR - http://www.scopus.com/inward/record.url?scp=85070785502&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85070785502&partnerID=8YFLogxK

U2 - 10.1039/c9nr03870a

DO - 10.1039/c9nr03870a

M3 - Article

C2 - 31389459

AN - SCOPUS:85070785502

VL - 11

SP - 15367

EP - 15373

JO - Nanoscale

JF - Nanoscale

SN - 2040-3364

IS - 32

ER -