Sulfidation mechanism of pre-cleaned GaAs surface using (NH4)2Sx solution

Min Gu Kang, Seung Hoon Sa, Hyung-Ho Park, Kyung Soo Suh, Jong Lam Lee

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Wet cleaning and successive sulfidation of GaAs with (NH4)2Sx solution were carried out in air or in an atmosphere controlled glove box with nitrogen, respectively. The wet cleaned GaAs was revealed to contain oxide and/or elemental forms of As and/or Ga. Successive sulfidation with (NH4)2Sx brought about a large decrease of surface oxides and elemental forms, and the occurrence of As-S and/or Ga-S bonds. The formation of passivation layer with sulfur was shown to be mainly dependent on the surface state of wet cleaned GaAs before the sulfidation, and especially on the presence of elemental As and Ga. The amount of sulfur bonds with As and Ga was determined by the quantity of elemental form of As and Ga generated during the surface preparation for the sulfidation. X-ray photoelectron spectroscopy was employed to investigate a chemical bonding state of wet etched and sulfidation treated GaAs surface.

Original languageEnglish
Pages (from-to)65-68
Number of pages4
JournalMaterials Science and Engineering B
Volume46
Issue number1-3
DOIs
Publication statusPublished - 1997 Jan 1

Fingerprint

sulfidation
Sulfur
Oxides
Surface states
Passivation
sulfur
Cleaning
gloves
X ray photoelectron spectroscopy
controlled atmospheres
oxides
Protective atmospheres
Nitrogen
cleaning
passivity
boxes
Air
gallium arsenide
photoelectron spectroscopy
occurrences

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Kang, Min Gu ; Sa, Seung Hoon ; Park, Hyung-Ho ; Suh, Kyung Soo ; Lee, Jong Lam. / Sulfidation mechanism of pre-cleaned GaAs surface using (NH4)2Sx solution. In: Materials Science and Engineering B. 1997 ; Vol. 46, No. 1-3. pp. 65-68.
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Sulfidation mechanism of pre-cleaned GaAs surface using (NH4)2Sx solution. / Kang, Min Gu; Sa, Seung Hoon; Park, Hyung-Ho; Suh, Kyung Soo; Lee, Jong Lam.

In: Materials Science and Engineering B, Vol. 46, No. 1-3, 01.01.1997, p. 65-68.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Sulfidation mechanism of pre-cleaned GaAs surface using (NH4)2Sx solution

AU - Kang, Min Gu

AU - Sa, Seung Hoon

AU - Park, Hyung-Ho

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AU - Lee, Jong Lam

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AB - Wet cleaning and successive sulfidation of GaAs with (NH4)2Sx solution were carried out in air or in an atmosphere controlled glove box with nitrogen, respectively. The wet cleaned GaAs was revealed to contain oxide and/or elemental forms of As and/or Ga. Successive sulfidation with (NH4)2Sx brought about a large decrease of surface oxides and elemental forms, and the occurrence of As-S and/or Ga-S bonds. The formation of passivation layer with sulfur was shown to be mainly dependent on the surface state of wet cleaned GaAs before the sulfidation, and especially on the presence of elemental As and Ga. The amount of sulfur bonds with As and Ga was determined by the quantity of elemental form of As and Ga generated during the surface preparation for the sulfidation. X-ray photoelectron spectroscopy was employed to investigate a chemical bonding state of wet etched and sulfidation treated GaAs surface.

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