Sulfur vacancy-induced reversible doping of transition metal disulfides: Via hydrazine treatment

Sang Soo Chee; Chohee Oh; Myungwoo Son; Gi Cheol Son; Hanbyeol Jang; Tae Jin Yoo; Seungmin Lee; Wonki Lee; Jun Yeon Hwang; Hyunyong Choi; Byoung Hun Lee; Moon Ho Ham

doi:10.1039/c7nr01883e

Sulfur vacancy-induced reversible doping of transition metal disulfides: Via hydrazine treatment

Sang Soo Chee, Chohee Oh, Myungwoo Son, Gi Cheol Son, Hanbyeol Jang, Tae Jin Yoo, Seungmin Lee, Wonki Lee, Jun Yeon Hwang, Hyunyong Choi, Byoung Hun Lee, Moon Ho Ham

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

49 Citations (Scopus)

Abstract

Chemical doping of transition metal dichalcogenides (TMDCs) has drawn significant interest because of its applicability to the modification of electrical and optical properties of TMDCs. This is of fundamental and technological importance for high-efficiency electronic and optoelectronic devices. Here, we present a simple and facile route to reversible and controllable modulation of the electrical and optical properties of WS₂ and MoS₂via hydrazine doping and sulfur annealing. Hydrazine treatment of WS₂ improves the field-effect mobilities, on/off current ratios, and photoresponsivities of the devices. This is due to the surface charge transfer doping of WS₂ and the sulfur vacancies formed by its reduction, which result in an n-type doping effect. The changes in the electrical and optical properties are fully recovered when the WS₂ is annealed in an atmosphere of sulfur. This method for reversible modulation can be applied to other transition metal disulfides including MoS₂, which may enable the fabrication of two-dimensional electronic and optoelectronic devices with tunable properties and improved performance.

Original language	English
Pages (from-to)	9333-9339
Number of pages	7
Journal	Nanoscale
Volume	9
Issue number	27
DOIs	https://doi.org/10.1039/c7nr01883e
Publication status	Published - 2017 Jul 21

Bibliographical note

Funding Information:
This work was supported by Global Frontier R&D Program through the Global Frontier Hybrid Interface Materials (GFHIM) of the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning (2013M3A6B1078873), Nano Material Technology Development Program of the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning (2016M3A7B4909942), Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2015R1D1A1A01058982), the Future Semiconductor Device Technology Development Program (10044868) funded by Ministry of Trade, Industry & Energy (MOTIE) and Korea Semiconductor Research Consortium (KSRC), and the National Research Foundation of Korea (NRF) through the government of Korea (MSIP) (2016R1A4A1012929).

Publisher Copyright:
© 2017 The Royal Society of Chemistry.

All Science Journal Classification (ASJC) codes

Materials Science(all)

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@article{5880b9ddafcc4f8d978f68cc461ac3b2,

title = "Sulfur vacancy-induced reversible doping of transition metal disulfides: Via hydrazine treatment",

abstract = "Chemical doping of transition metal dichalcogenides (TMDCs) has drawn significant interest because of its applicability to the modification of electrical and optical properties of TMDCs. This is of fundamental and technological importance for high-efficiency electronic and optoelectronic devices. Here, we present a simple and facile route to reversible and controllable modulation of the electrical and optical properties of WS2 and MoS2via hydrazine doping and sulfur annealing. Hydrazine treatment of WS2 improves the field-effect mobilities, on/off current ratios, and photoresponsivities of the devices. This is due to the surface charge transfer doping of WS2 and the sulfur vacancies formed by its reduction, which result in an n-type doping effect. The changes in the electrical and optical properties are fully recovered when the WS2 is annealed in an atmosphere of sulfur. This method for reversible modulation can be applied to other transition metal disulfides including MoS2, which may enable the fabrication of two-dimensional electronic and optoelectronic devices with tunable properties and improved performance.",

author = "Chee, {Sang Soo} and Chohee Oh and Myungwoo Son and Son, {Gi Cheol} and Hanbyeol Jang and Yoo, {Tae Jin} and Seungmin Lee and Wonki Lee and Hwang, {Jun Yeon} and Hyunyong Choi and Lee, {Byoung Hun} and Ham, {Moon Ho}",

note = "Funding Information: This work was supported by Global Frontier R&D Program through the Global Frontier Hybrid Interface Materials (GFHIM) of the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning (2013M3A6B1078873), Nano Material Technology Development Program of the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning (2016M3A7B4909942), Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2015R1D1A1A01058982), the Future Semiconductor Device Technology Development Program (10044868) funded by Ministry of Trade, Industry & Energy (MOTIE) and Korea Semiconductor Research Consortium (KSRC), and the National Research Foundation of Korea (NRF) through the government of Korea (MSIP) (2016R1A4A1012929). Publisher Copyright: {\textcopyright} 2017 The Royal Society of Chemistry.",

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doi = "10.1039/c7nr01883e",

language = "English",

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T1 - Sulfur vacancy-induced reversible doping of transition metal disulfides

T2 - Via hydrazine treatment

AU - Chee, Sang Soo

AU - Oh, Chohee

AU - Son, Myungwoo

AU - Son, Gi Cheol

AU - Jang, Hanbyeol

AU - Yoo, Tae Jin

AU - Lee, Seungmin

AU - Lee, Wonki

AU - Hwang, Jun Yeon

AU - Choi, Hyunyong

AU - Lee, Byoung Hun

AU - Ham, Moon Ho

N1 - Funding Information: This work was supported by Global Frontier R&D Program through the Global Frontier Hybrid Interface Materials (GFHIM) of the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning (2013M3A6B1078873), Nano Material Technology Development Program of the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning (2016M3A7B4909942), Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2015R1D1A1A01058982), the Future Semiconductor Device Technology Development Program (10044868) funded by Ministry of Trade, Industry & Energy (MOTIE) and Korea Semiconductor Research Consortium (KSRC), and the National Research Foundation of Korea (NRF) through the government of Korea (MSIP) (2016R1A4A1012929). Publisher Copyright: © 2017 The Royal Society of Chemistry.

PY - 2017/7/21

Y1 - 2017/7/21

N2 - Chemical doping of transition metal dichalcogenides (TMDCs) has drawn significant interest because of its applicability to the modification of electrical and optical properties of TMDCs. This is of fundamental and technological importance for high-efficiency electronic and optoelectronic devices. Here, we present a simple and facile route to reversible and controllable modulation of the electrical and optical properties of WS2 and MoS2via hydrazine doping and sulfur annealing. Hydrazine treatment of WS2 improves the field-effect mobilities, on/off current ratios, and photoresponsivities of the devices. This is due to the surface charge transfer doping of WS2 and the sulfur vacancies formed by its reduction, which result in an n-type doping effect. The changes in the electrical and optical properties are fully recovered when the WS2 is annealed in an atmosphere of sulfur. This method for reversible modulation can be applied to other transition metal disulfides including MoS2, which may enable the fabrication of two-dimensional electronic and optoelectronic devices with tunable properties and improved performance.

AB - Chemical doping of transition metal dichalcogenides (TMDCs) has drawn significant interest because of its applicability to the modification of electrical and optical properties of TMDCs. This is of fundamental and technological importance for high-efficiency electronic and optoelectronic devices. Here, we present a simple and facile route to reversible and controllable modulation of the electrical and optical properties of WS2 and MoS2via hydrazine doping and sulfur annealing. Hydrazine treatment of WS2 improves the field-effect mobilities, on/off current ratios, and photoresponsivities of the devices. This is due to the surface charge transfer doping of WS2 and the sulfur vacancies formed by its reduction, which result in an n-type doping effect. The changes in the electrical and optical properties are fully recovered when the WS2 is annealed in an atmosphere of sulfur. This method for reversible modulation can be applied to other transition metal disulfides including MoS2, which may enable the fabrication of two-dimensional electronic and optoelectronic devices with tunable properties and improved performance.

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JO - Nanoscale

JF - Nanoscale

IS - 27

ER -

Sulfur vacancy-induced reversible doping of transition metal disulfides: Via hydrazine treatment

Abstract

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