Super fast switching and low operating of liquid crystals sandwiched between ion beam-spurted ITO thin layers

Yang Liu, Jiatong Sun, Huashan Liu, Dae-Shik Seo

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Ion beam (IB)-spurted indium tin oxide (ITO) thin layers are used to align liquid crystals (LC) with a lower driving voltage. During IB spurting process, the microcrystals transforming to large crystals of ITO is intimated by the change of In (3d), Sn (3d) and O (1s) core level in XPS spectra and the surface topology modifications in SEM and AFM images, and IB-spurted ITO thin layers are comparably transparent and conductive compared with ITO thin layers. The increased interactions between LC and IB-spurted ITO thin layers together with the roughed surface topology of ITO thin layers are the main causes for LC alignment. The fast response and distribution of electrical dipoles to external voltage in LC causes LC’s extremely low threshold voltage drive; in addition, LC directly aligned on ITO thin layers free from alignment layers shield effect further decreases LC’s threshold voltage. 1.8-keV IB-spurted ITO thin layers are more appropriate to align LC with the threshold voltage of 0.4853 V and the rising time of 0.237 ms.

Original languageEnglish
Pages (from-to)1052-1059
Number of pages8
JournalLiquid Crystals
Volume46
Issue number7
DOIs
Publication statusPublished - 2019 May 28

Fingerprint

Liquid Crystals
Tin oxides
indium oxides
Liquid crystals
Indium
Ion beams
tin oxides
ion beams
liquid crystals
Threshold voltage
threshold voltage
low voltage
topology
alignment
Topology
Microcrystals
Core levels
indium tin oxide
causes
microcrystals

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

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title = "Super fast switching and low operating of liquid crystals sandwiched between ion beam-spurted ITO thin layers",
abstract = "Ion beam (IB)-spurted indium tin oxide (ITO) thin layers are used to align liquid crystals (LC) with a lower driving voltage. During IB spurting process, the microcrystals transforming to large crystals of ITO is intimated by the change of In (3d), Sn (3d) and O (1s) core level in XPS spectra and the surface topology modifications in SEM and AFM images, and IB-spurted ITO thin layers are comparably transparent and conductive compared with ITO thin layers. The increased interactions between LC and IB-spurted ITO thin layers together with the roughed surface topology of ITO thin layers are the main causes for LC alignment. The fast response and distribution of electrical dipoles to external voltage in LC causes LC’s extremely low threshold voltage drive; in addition, LC directly aligned on ITO thin layers free from alignment layers shield effect further decreases LC’s threshold voltage. 1.8-keV IB-spurted ITO thin layers are more appropriate to align LC with the threshold voltage of 0.4853 V and the rising time of 0.237 ms.",
author = "Yang Liu and Jiatong Sun and Huashan Liu and Dae-Shik Seo",
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Super fast switching and low operating of liquid crystals sandwiched between ion beam-spurted ITO thin layers. / Liu, Yang; Sun, Jiatong; Liu, Huashan; Seo, Dae-Shik.

In: Liquid Crystals, Vol. 46, No. 7, 28.05.2019, p. 1052-1059.

Research output: Contribution to journalArticle

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AU - Sun, Jiatong

AU - Liu, Huashan

AU - Seo, Dae-Shik

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Y1 - 2019/5/28

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AB - Ion beam (IB)-spurted indium tin oxide (ITO) thin layers are used to align liquid crystals (LC) with a lower driving voltage. During IB spurting process, the microcrystals transforming to large crystals of ITO is intimated by the change of In (3d), Sn (3d) and O (1s) core level in XPS spectra and the surface topology modifications in SEM and AFM images, and IB-spurted ITO thin layers are comparably transparent and conductive compared with ITO thin layers. The increased interactions between LC and IB-spurted ITO thin layers together with the roughed surface topology of ITO thin layers are the main causes for LC alignment. The fast response and distribution of electrical dipoles to external voltage in LC causes LC’s extremely low threshold voltage drive; in addition, LC directly aligned on ITO thin layers free from alignment layers shield effect further decreases LC’s threshold voltage. 1.8-keV IB-spurted ITO thin layers are more appropriate to align LC with the threshold voltage of 0.4853 V and the rising time of 0.237 ms.

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