Supercritical fluid deposition of conformal SRTI O3 films with composition uniformity in nanocontact holes

J. H. Lee, J. Y. Son, Han Bo Ram Lee, Heung Soon Lee, D. J. Ma, C. S. Lee, Hyungjun Kim

Research output: Contribution to journalArticle

11 Citations (Scopus)


SrTi O3 with a high dielectric constant is considered a promising capacitor dielectric for dynamic random access memory. Until now, a SrTi O3 deposition with compositional uniformity and perfect conformality inside high-aspect nanoscale holes has been difficult by chemical vapor deposition (CVD) and atomic layer deposition (ALD). In this study, we report a supercritical fluid deposition (SCFD) of SrTi O3. Compared to CVD SrTi O3, the SCFD SrTi O3 showed perfect conformality and compositional uniformity inside nanosize holes. From these results, the SCFD is expected to be a solution for the stoichiometry and conformality issues of the CVD and ALD SrTi O3.

Original languageEnglish
Pages (from-to)D45-D47
JournalElectrochemical and Solid-State Letters
Issue number5
Publication statusPublished - 2009 Mar 24


All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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