SrTi O3 with a high dielectric constant is considered a promising capacitor dielectric for dynamic random access memory. Until now, a SrTi O3 deposition with compositional uniformity and perfect conformality inside high-aspect nanoscale holes has been difficult by chemical vapor deposition (CVD) and atomic layer deposition (ALD). In this study, we report a supercritical fluid deposition (SCFD) of SrTi O3. Compared to CVD SrTi O3, the SCFD SrTi O3 showed perfect conformality and compositional uniformity inside nanosize holes. From these results, the SCFD is expected to be a solution for the stoichiometry and conformality issues of the CVD and ALD SrTi O3.
|Journal||Electrochemical and Solid-State Letters|
|Publication status||Published - 2009|
All Science Journal Classification (ASJC) codes
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering