Supercritical fluid deposition (SCFD) of SiO 2 thin film using supercritical fluid CO 2 (SCF CO 2) was investigated. Tetraethyl orthosilicate (TEOS) and O 2 were used as precursor and reactant, respectively. Growth characteristics of SCFD SiO 2 were investigated as a function of key growth parameters including the concentration of precursors, deposition time, and temperature. The activation energy of SCFD SiO 2 was lower than the reported value of chemical vapor deposition of SiO 2, indicating the solvation effects of SCF CO 2 on the reaction of TEOS and O 2. By controlling precursor concentrations, excellent gap filling of SCFD SiO 2 was achieved even inside of anodic aluminum oxide with less than 50 nm hole diameter. Leakage current of SCFD SiO 2 films increased with increasing oxygen concentration, which was attributed to the decrease of the film density. Higher O 2 concentration led to rapid reaction of SCFD SiO 2, resulting in the low density SiO 2 formation with high leakage current.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Materials Chemistry