Superhydrophobic modification of gate dielectrics for densely packed pentacene thin film transistors

Chang Su Kim, Sung Jin Jo, Jong Bok Kim, Seung Yoon Ryu, Joo Hyon Noh, Hong Koo Baik, Se Jong Lee, Youn Sang Kim

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Abstract

Pentacene organic thin film transistors (OTFTs) with low- k and high- k hybrid gate dielectrics by C F4 plasma treatment exhibited excellent device performance with field effect mobilities (maximum 1.41 cm2 V s), a low threshold voltage of +1 V, and on/off current ratios of 105 at -5 V gate bias. After C F4 plasma treatment, fluorine atoms diffuse into the interior low- k polymer and eliminate ionic impurities which reduce the leakage current density and overall pentacene initial growth on the superhydrophobic surface is significantly improved. It seems apparent that proper surface treatment is desirable for higher quality pentacene film and improving the performance of OTFTs.

Original languageEnglish
Article number063503
JournalApplied Physics Letters
Volume91
Issue number6
DOIs
Publication statusPublished - 2007 Aug 17

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Kim, C. S., Jo, S. J., Kim, J. B., Ryu, S. Y., Noh, J. H., Baik, H. K., Lee, S. J., & Kim, Y. S. (2007). Superhydrophobic modification of gate dielectrics for densely packed pentacene thin film transistors. Applied Physics Letters, 91(6), [063503]. https://doi.org/10.1063/1.2767779