Pentacene organic thin film transistors (OTFTs) with low- k and high- k hybrid gate dielectrics by C F4 plasma treatment exhibited excellent device performance with field effect mobilities (maximum 1.41 cm2 V s), a low threshold voltage of +1 V, and on/off current ratios of 105 at -5 V gate bias. After C F4 plasma treatment, fluorine atoms diffuse into the interior low- k polymer and eliminate ionic impurities which reduce the leakage current density and overall pentacene initial growth on the superhydrophobic surface is significantly improved. It seems apparent that proper surface treatment is desirable for higher quality pentacene film and improving the performance of OTFTs.
Bibliographical noteFunding Information:
The authors gratefully acknowledge financial support from the LG Phillips LCD and the BK 21 Program of the Ministry of Education and Human Resources Development of Korea.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)