Superhydrophobic modification of gate dielectrics for densely packed pentacene thin film transistors

Chang Su Kim, Sung Jin Jo, Jong Bok Kim, Seung Yoon Ryu, Joo Hyon Noh, Hong Koo Baik, Se Jong Lee, Youn Sang Kim

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

Pentacene organic thin film transistors (OTFTs) with low- k and high- k hybrid gate dielectrics by C F4 plasma treatment exhibited excellent device performance with field effect mobilities (maximum 1.41 cm2 V s), a low threshold voltage of +1 V, and on/off current ratios of 105 at -5 V gate bias. After C F4 plasma treatment, fluorine atoms diffuse into the interior low- k polymer and eliminate ionic impurities which reduce the leakage current density and overall pentacene initial growth on the superhydrophobic surface is significantly improved. It seems apparent that proper surface treatment is desirable for higher quality pentacene film and improving the performance of OTFTs.

Original languageEnglish
Article number063503
JournalApplied Physics Letters
Volume91
Issue number6
DOIs
Publication statusPublished - 2007 Aug 17

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transistors
thin films
surface treatment
threshold voltage
low voltage
fluorine
leakage
current density
impurities
polymers
atoms

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Kim, Chang Su ; Jo, Sung Jin ; Kim, Jong Bok ; Ryu, Seung Yoon ; Noh, Joo Hyon ; Baik, Hong Koo ; Lee, Se Jong ; Kim, Youn Sang. / Superhydrophobic modification of gate dielectrics for densely packed pentacene thin film transistors. In: Applied Physics Letters. 2007 ; Vol. 91, No. 6.
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Superhydrophobic modification of gate dielectrics for densely packed pentacene thin film transistors. / Kim, Chang Su; Jo, Sung Jin; Kim, Jong Bok; Ryu, Seung Yoon; Noh, Joo Hyon; Baik, Hong Koo; Lee, Se Jong; Kim, Youn Sang.

In: Applied Physics Letters, Vol. 91, No. 6, 063503, 17.08.2007.

Research output: Contribution to journalArticle

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AU - Baik, Hong Koo

AU - Lee, Se Jong

AU - Kim, Youn Sang

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AB - Pentacene organic thin film transistors (OTFTs) with low- k and high- k hybrid gate dielectrics by C F4 plasma treatment exhibited excellent device performance with field effect mobilities (maximum 1.41 cm2 V s), a low threshold voltage of +1 V, and on/off current ratios of 105 at -5 V gate bias. After C F4 plasma treatment, fluorine atoms diffuse into the interior low- k polymer and eliminate ionic impurities which reduce the leakage current density and overall pentacene initial growth on the superhydrophobic surface is significantly improved. It seems apparent that proper surface treatment is desirable for higher quality pentacene film and improving the performance of OTFTs.

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