Suppressed oxygen vacancy in pristine/N doped ZnO and improved ZnO homogenous p-n junction performance by H2O2 oxidant

Yue Wang; Minjae Kim; Akendra Singh Chabungbam; Dong eun Kim; Hyung Ho Park

doi:10.1016/j.apsusc.2021.152170

Suppressed oxygen vacancy in pristine/N doped ZnO and improved ZnO homogenous p-n junction performance by H₂O₂ oxidant

Yue Wang, Minjae Kim, Akendra Singh Chabungbam, Dong eun Kim, Hyung Ho Park

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Intrinsic oxygen vacancy n-type defects in as-prepared ZnO films have significantly restricted p-type ZnO fabrication. This paper utilized oxygen precursor H₂O₂ to reduce oxygen deficiency defects in ZnO films prepared using thermal atomic layer deposition. Results confirm that H₂O₂ can suppress oxygen deficiency for ZnO and N-doped ZnO films, with consequential reduced electron concentration. Electron concentration for N doped ZnO reduced from 2.27 × 10¹⁶ to 1.02 × 10¹² cm⁻³, enhancing suitability for p-type ZnO fabrication. Nitrogen (H₂O₂ dosing directly after NH₃·H₂O dosing) and F co-doped ZnO exhibited good p-type quality with hole concentration = 9.28 × 10¹⁷ cm⁻³, and ZnO homogenous p-n junction prepared using this H₂O₂ dosed N and F co-doped ZnO as p-type and pristine ZnO as n-type exhibited improved single direction rectification compared with using N and F co-doped ZnO as p-type without H₂O₂ doping.

Original language	English
Article number	152170
Journal	Applied Surface Science
Volume	579
DOIs	https://doi.org/10.1016/j.apsusc.2021.152170
Publication status	Published - 2022 Mar 30

Bibliographical note

Funding Information:
This study was supported by the South Korean Ministry of Trade, Industry & Energy, under the Industrial Strategic Technology Development Program (grant 10068075), National Research Foundation of Korea (NRF) funded by the Korea government (grant 2019R1A2C2087604 ), Creative Materials Discovery Program through the National Research Foundation of Korea funded by the Ministry of Science and ICT (grant 2018M3D1A1058536). Yue Wang would like to thank the China Scholarship Council (CSC) for financial support.

Publisher Copyright:
© 2021 Elsevier B.V.

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1016/j.apsusc.2021.152170

Cite this

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title = "Suppressed oxygen vacancy in pristine/N doped ZnO and improved ZnO homogenous p-n junction performance by H2O2 oxidant",

abstract = "Intrinsic oxygen vacancy n-type defects in as-prepared ZnO films have significantly restricted p-type ZnO fabrication. This paper utilized oxygen precursor H2O2 to reduce oxygen deficiency defects in ZnO films prepared using thermal atomic layer deposition. Results confirm that H2O2 can suppress oxygen deficiency for ZnO and N-doped ZnO films, with consequential reduced electron concentration. Electron concentration for N doped ZnO reduced from 2.27 × 1016 to 1.02 × 1012 cm−3, enhancing suitability for p-type ZnO fabrication. Nitrogen (H2O2 dosing directly after NH3·H2O dosing) and F co-doped ZnO exhibited good p-type quality with hole concentration = 9.28 × 1017 cm−3, and ZnO homogenous p-n junction prepared using this H2O2 dosed N and F co-doped ZnO as p-type and pristine ZnO as n-type exhibited improved single direction rectification compared with using N and F co-doped ZnO as p-type without H2O2 doping.",

author = "Yue Wang and Minjae Kim and Chabungbam, {Akendra Singh} and Kim, {Dong eun} and Park, {Hyung Ho}",

note = "Funding Information: This study was supported by the South Korean Ministry of Trade, Industry & Energy, under the Industrial Strategic Technology Development Program (grant 10068075), National Research Foundation of Korea (NRF) funded by the Korea government (grant 2019R1A2C2087604 ), Creative Materials Discovery Program through the National Research Foundation of Korea funded by the Ministry of Science and ICT (grant 2018M3D1A1058536). Yue Wang would like to thank the China Scholarship Council (CSC) for financial support. Publisher Copyright: {\textcopyright} 2021 Elsevier B.V.",

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doi = "10.1016/j.apsusc.2021.152170",

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T1 - Suppressed oxygen vacancy in pristine/N doped ZnO and improved ZnO homogenous p-n junction performance by H2O2 oxidant

AU - Wang, Yue

AU - Kim, Minjae

AU - Chabungbam, Akendra Singh

AU - Kim, Dong eun

AU - Park, Hyung Ho

N1 - Funding Information: This study was supported by the South Korean Ministry of Trade, Industry & Energy, under the Industrial Strategic Technology Development Program (grant 10068075), National Research Foundation of Korea (NRF) funded by the Korea government (grant 2019R1A2C2087604 ), Creative Materials Discovery Program through the National Research Foundation of Korea funded by the Ministry of Science and ICT (grant 2018M3D1A1058536). Yue Wang would like to thank the China Scholarship Council (CSC) for financial support. Publisher Copyright: © 2021 Elsevier B.V.

PY - 2022/3/30

Y1 - 2022/3/30

N2 - Intrinsic oxygen vacancy n-type defects in as-prepared ZnO films have significantly restricted p-type ZnO fabrication. This paper utilized oxygen precursor H2O2 to reduce oxygen deficiency defects in ZnO films prepared using thermal atomic layer deposition. Results confirm that H2O2 can suppress oxygen deficiency for ZnO and N-doped ZnO films, with consequential reduced electron concentration. Electron concentration for N doped ZnO reduced from 2.27 × 1016 to 1.02 × 1012 cm−3, enhancing suitability for p-type ZnO fabrication. Nitrogen (H2O2 dosing directly after NH3·H2O dosing) and F co-doped ZnO exhibited good p-type quality with hole concentration = 9.28 × 1017 cm−3, and ZnO homogenous p-n junction prepared using this H2O2 dosed N and F co-doped ZnO as p-type and pristine ZnO as n-type exhibited improved single direction rectification compared with using N and F co-doped ZnO as p-type without H2O2 doping.

AB - Intrinsic oxygen vacancy n-type defects in as-prepared ZnO films have significantly restricted p-type ZnO fabrication. This paper utilized oxygen precursor H2O2 to reduce oxygen deficiency defects in ZnO films prepared using thermal atomic layer deposition. Results confirm that H2O2 can suppress oxygen deficiency for ZnO and N-doped ZnO films, with consequential reduced electron concentration. Electron concentration for N doped ZnO reduced from 2.27 × 1016 to 1.02 × 1012 cm−3, enhancing suitability for p-type ZnO fabrication. Nitrogen (H2O2 dosing directly after NH3·H2O dosing) and F co-doped ZnO exhibited good p-type quality with hole concentration = 9.28 × 1017 cm−3, and ZnO homogenous p-n junction prepared using this H2O2 dosed N and F co-doped ZnO as p-type and pristine ZnO as n-type exhibited improved single direction rectification compared with using N and F co-doped ZnO as p-type without H2O2 doping.

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