Intrinsic oxygen vacancy n-type defects in as-prepared ZnO films have significantly restricted p-type ZnO fabrication. This paper utilized oxygen precursor H2O2 to reduce oxygen deficiency defects in ZnO films prepared using thermal atomic layer deposition. Results confirm that H2O2 can suppress oxygen deficiency for ZnO and N-doped ZnO films, with consequential reduced electron concentration. Electron concentration for N doped ZnO reduced from 2.27 × 1016 to 1.02 × 1012 cm−3, enhancing suitability for p-type ZnO fabrication. Nitrogen (H2O2 dosing directly after NH3·H2O dosing) and F co-doped ZnO exhibited good p-type quality with hole concentration = 9.28 × 1017 cm−3, and ZnO homogenous p-n junction prepared using this H2O2 dosed N and F co-doped ZnO as p-type and pristine ZnO as n-type exhibited improved single direction rectification compared with using N and F co-doped ZnO as p-type without H2O2 doping.
|Journal||Applied Surface Science|
|Publication status||Published - 2022 Mar 30|
Bibliographical noteFunding Information:
This study was supported by the South Korean Ministry of Trade, Industry & Energy, under the Industrial Strategic Technology Development Program (grant 10068075), National Research Foundation of Korea (NRF) funded by the Korea government (grant 2019R1A2C2087604 ), Creative Materials Discovery Program through the National Research Foundation of Korea funded by the Ministry of Science and ICT (grant 2018M3D1A1058536). Yue Wang would like to thank the China Scholarship Council (CSC) for financial support.
© 2021 Elsevier B.V.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films