Suppression of nickel-germanide (NiGe) agglomeration and Ni penetration by hydrogen (H) ion shower doping in NiGe on a thin epitaxial Ge-on-Si substrate

Min Ho Kang, Ying Ying Zhang, Kee Young Park, Shi Guang Li, Soon Yen Jung, Ga Won Lee, Jin Suk Wang, Hi Deok Lee, Jung Woo Oh, Prashant Majhi, Raj Jammy, Kun Joo Park

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Abstract

Hydrogen (H) ion shower doping was proposed to improve the thermal stability of nickel germanide (NiGe), and its effects were analyzed in depth. As the post-germanidation annealing temperature was increased, the sheet resistance (Rsh) of the undoped sample increased sharply due to NiGe agglomeration while that of the H-doped samples showed a little increase at a temperature above 550 °C due to the suppression of NiGe agglomeration and Ni penetration. Hydrogen atoms in NiGe were found to significantly suppress local penetration of Ni atoms out of NiGe and hence contribute to the improvement the thermal stability of NiGe.

Original languageEnglish
Pages (from-to)221-226
Number of pages6
JournalJournal of the Korean Physical Society
Volume55
Issue number1
DOIs
Publication statusPublished - 2009 Jul 1

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Kang, M. H., Zhang, Y. Y., Park, K. Y., Li, S. G., Jung, S. Y., Lee, G. W., Wang, J. S., Lee, H. D., Oh, J. W., Majhi, P., Jammy, R., & Park, K. J. (2009). Suppression of nickel-germanide (NiGe) agglomeration and Ni penetration by hydrogen (H) ion shower doping in NiGe on a thin epitaxial Ge-on-Si substrate. Journal of the Korean Physical Society, 55(1), 221-226. https://doi.org/10.3938/jkps.55.221