Suppression of phase separation in Hf-silicate films using NH ₃ annealing treatment

The structural characteristics of Hf-silicate films and nitrogen incorporated Hf-silicate films, prepared using a NH3 annealing treatment, were investigated by various measurements. Hf-silicate films annealed in a N2 ambient at 900 °C show the evidence of crystallization in local regions, resulting in the phase separation of HfO2 and SiO2. In addition, a SiO2 overlayer is formed on the Hf-silicate films, due to the diffusion of Si by postannealing in an ambient of N2 at 900 °C. However, in nitrogen incorporated Hf-silicate films, prepared using a NH3 annealing treatment, phase separation is effectively suppressed and no SiO2 overlayer is present. The incorporated N is distributed into the film and interfacial layer, and obstructs the diffusion of Si from the substrate as well as the film. Structural changes in films affect electrical characteristics such as the dielectric constant and flatband voltage.