Suppression of phase separation in Hf-silicate films using NH 3 annealing treatment

K. B. Chung, C. N. Whang, Mann-Ho Cho, C. J. Yim, Dae Hong Ko

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

The structural characteristics of Hf-silicate films and nitrogen incorporated Hf-silicate films, prepared using a NH3 annealing treatment, were investigated by various measurements. Hf-silicate films annealed in a N2 ambient at 900 °C show the evidence of crystallization in local regions, resulting in the phase separation of HfO2 and SiO2. In addition, a SiO2 overlayer is formed on the Hf-silicate films, due to the diffusion of Si by postannealing in an ambient of N2 at 900 °C. However, in nitrogen incorporated Hf-silicate films, prepared using a NH3 annealing treatment, phase separation is effectively suppressed and no SiO2 overlayer is present. The incorporated N is distributed into the film and interfacial layer, and obstructs the diffusion of Si from the substrate as well as the film. Structural changes in films affect electrical characteristics such as the dielectric constant and flatband voltage.

Original languageEnglish
Article number081903
JournalApplied Physics Letters
Volume88
Issue number8
DOIs
Publication statusPublished - 2006 Mar 3

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silicates
retarding
annealing
nitrogen
crystallization
permittivity
electric potential

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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title = "Suppression of phase separation in Hf-silicate films using NH 3 annealing treatment",
abstract = "The structural characteristics of Hf-silicate films and nitrogen incorporated Hf-silicate films, prepared using a NH3 annealing treatment, were investigated by various measurements. Hf-silicate films annealed in a N2 ambient at 900 °C show the evidence of crystallization in local regions, resulting in the phase separation of HfO2 and SiO2. In addition, a SiO2 overlayer is formed on the Hf-silicate films, due to the diffusion of Si by postannealing in an ambient of N2 at 900 °C. However, in nitrogen incorporated Hf-silicate films, prepared using a NH3 annealing treatment, phase separation is effectively suppressed and no SiO2 overlayer is present. The incorporated N is distributed into the film and interfacial layer, and obstructs the diffusion of Si from the substrate as well as the film. Structural changes in films affect electrical characteristics such as the dielectric constant and flatband voltage.",
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Suppression of phase separation in Hf-silicate films using NH 3 annealing treatment. / Chung, K. B.; Whang, C. N.; Cho, Mann-Ho; Yim, C. J.; Ko, Dae Hong.

In: Applied Physics Letters, Vol. 88, No. 8, 081903, 03.03.2006.

Research output: Contribution to journalArticle

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T1 - Suppression of phase separation in Hf-silicate films using NH 3 annealing treatment

AU - Chung, K. B.

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