Suppression of phase transitions in Pd thin films by insertion of a Ti buffer layer

Kyung Rae Kim, Jin Seo Noh, Jun Min Lee, Youn Joo Kim, Wooyoung Lee

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

We investigated the effects of a thin titanium (Ti) buffer layer on structural changes and electrical responses of palladium (Pd) thin films. A Ti buffer layer was inserted between a Pd film and the substrate, with varying thickness from 0.5 to 80 nm. Unlike pure Pd films, Ti-buffered Pd films showed no structural deformations after cyclic exposure to hydrogen gas, leading to a linear relationship between sensitivity and hydrogen gas concentration over the measured concentration range of 0 to 2%. This was attributed to the suppression of phase transitions from the a to the b phase in Pd films, due to the reinforced film adhesion by the inserted Ti layer. Our results highlight the practical usability of Pd thin films as reliable and sensible hydrogen sensors, enabled simply by the insertion of a thin Ti buffer layer.

Original languageEnglish
Pages (from-to)1597-1601
Number of pages5
JournalJournal of Materials Science
Volume46
Issue number6
DOIs
Publication statusPublished - 2011 Mar 1

Fingerprint

Palladium
Buffer layers
Titanium
Phase transitions
Thin films
Hydrogen
Gases
Adhesion
Sensors
Substrates

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Kim, Kyung Rae ; Noh, Jin Seo ; Lee, Jun Min ; Kim, Youn Joo ; Lee, Wooyoung. / Suppression of phase transitions in Pd thin films by insertion of a Ti buffer layer. In: Journal of Materials Science. 2011 ; Vol. 46, No. 6. pp. 1597-1601.
@article{c17644898b474fedb8860ca10767b9be,
title = "Suppression of phase transitions in Pd thin films by insertion of a Ti buffer layer",
abstract = "We investigated the effects of a thin titanium (Ti) buffer layer on structural changes and electrical responses of palladium (Pd) thin films. A Ti buffer layer was inserted between a Pd film and the substrate, with varying thickness from 0.5 to 80 nm. Unlike pure Pd films, Ti-buffered Pd films showed no structural deformations after cyclic exposure to hydrogen gas, leading to a linear relationship between sensitivity and hydrogen gas concentration over the measured concentration range of 0 to 2{\%}. This was attributed to the suppression of phase transitions from the a to the b phase in Pd films, due to the reinforced film adhesion by the inserted Ti layer. Our results highlight the practical usability of Pd thin films as reliable and sensible hydrogen sensors, enabled simply by the insertion of a thin Ti buffer layer.",
author = "Kim, {Kyung Rae} and Noh, {Jin Seo} and Lee, {Jun Min} and Kim, {Youn Joo} and Wooyoung Lee",
year = "2011",
month = "3",
day = "1",
doi = "10.1007/s10853-010-4970-x",
language = "English",
volume = "46",
pages = "1597--1601",
journal = "Journal of Materials Science",
issn = "0022-2461",
publisher = "Springer Netherlands",
number = "6",

}

Suppression of phase transitions in Pd thin films by insertion of a Ti buffer layer. / Kim, Kyung Rae; Noh, Jin Seo; Lee, Jun Min; Kim, Youn Joo; Lee, Wooyoung.

In: Journal of Materials Science, Vol. 46, No. 6, 01.03.2011, p. 1597-1601.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Suppression of phase transitions in Pd thin films by insertion of a Ti buffer layer

AU - Kim, Kyung Rae

AU - Noh, Jin Seo

AU - Lee, Jun Min

AU - Kim, Youn Joo

AU - Lee, Wooyoung

PY - 2011/3/1

Y1 - 2011/3/1

N2 - We investigated the effects of a thin titanium (Ti) buffer layer on structural changes and electrical responses of palladium (Pd) thin films. A Ti buffer layer was inserted between a Pd film and the substrate, with varying thickness from 0.5 to 80 nm. Unlike pure Pd films, Ti-buffered Pd films showed no structural deformations after cyclic exposure to hydrogen gas, leading to a linear relationship between sensitivity and hydrogen gas concentration over the measured concentration range of 0 to 2%. This was attributed to the suppression of phase transitions from the a to the b phase in Pd films, due to the reinforced film adhesion by the inserted Ti layer. Our results highlight the practical usability of Pd thin films as reliable and sensible hydrogen sensors, enabled simply by the insertion of a thin Ti buffer layer.

AB - We investigated the effects of a thin titanium (Ti) buffer layer on structural changes and electrical responses of palladium (Pd) thin films. A Ti buffer layer was inserted between a Pd film and the substrate, with varying thickness from 0.5 to 80 nm. Unlike pure Pd films, Ti-buffered Pd films showed no structural deformations after cyclic exposure to hydrogen gas, leading to a linear relationship between sensitivity and hydrogen gas concentration over the measured concentration range of 0 to 2%. This was attributed to the suppression of phase transitions from the a to the b phase in Pd films, due to the reinforced film adhesion by the inserted Ti layer. Our results highlight the practical usability of Pd thin films as reliable and sensible hydrogen sensors, enabled simply by the insertion of a thin Ti buffer layer.

UR - http://www.scopus.com/inward/record.url?scp=79960837963&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79960837963&partnerID=8YFLogxK

U2 - 10.1007/s10853-010-4970-x

DO - 10.1007/s10853-010-4970-x

M3 - Article

AN - SCOPUS:79960837963

VL - 46

SP - 1597

EP - 1601

JO - Journal of Materials Science

JF - Journal of Materials Science

SN - 0022-2461

IS - 6

ER -