Suppression of suicide formation in Ta/Si system by ion-beam-assisted deposition

Joon Seop Kwak, Hong Koo Baik, Jong Hoon Kim, Sung Man Lee

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

In order to increase the failure temperature of a Ta diffusion barrier for Cu, the suppression of suicide formation in a Ta/Si system by ion-beam-assisted deposition of Ta film was investigated. When the Ta layer was deposited without ion bombardment, the reaction between Ta and Si started at 600 °C. In the case where the Ta film was prepared with concurrent ion bombardment, however, the suicide formation was retarded up to 700 °C. The suppression of Ta suicide formation can be attributed to a densification of grain boundaries in the Ta film by ion bombardment, followed by a reduction of the chemical driving force for the initial stage of suicide formation. The Ta diffusion barrier deposited by ion-beam-assisted deposition effectively suppressed the reaction between Si and Cu layers up to 650 °C for 30 min.

Original languageEnglish
Pages (from-to)2451-2453
Number of pages3
JournalApplied Physics Letters
Volume71
Issue number17
DOIs
Publication statusPublished - 1997 Oct 27

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ion beams
retarding
bombardment
ions
densification
grain boundaries
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Kwak, Joon Seop ; Baik, Hong Koo ; Kim, Jong Hoon ; Lee, Sung Man. / Suppression of suicide formation in Ta/Si system by ion-beam-assisted deposition. In: Applied Physics Letters. 1997 ; Vol. 71, No. 17. pp. 2451-2453.
@article{d8102c56066240e7906af42a1fef8e87,
title = "Suppression of suicide formation in Ta/Si system by ion-beam-assisted deposition",
abstract = "In order to increase the failure temperature of a Ta diffusion barrier for Cu, the suppression of suicide formation in a Ta/Si system by ion-beam-assisted deposition of Ta film was investigated. When the Ta layer was deposited without ion bombardment, the reaction between Ta and Si started at 600 °C. In the case where the Ta film was prepared with concurrent ion bombardment, however, the suicide formation was retarded up to 700 °C. The suppression of Ta suicide formation can be attributed to a densification of grain boundaries in the Ta film by ion bombardment, followed by a reduction of the chemical driving force for the initial stage of suicide formation. The Ta diffusion barrier deposited by ion-beam-assisted deposition effectively suppressed the reaction between Si and Cu layers up to 650 °C for 30 min.",
author = "Kwak, {Joon Seop} and Baik, {Hong Koo} and Kim, {Jong Hoon} and Lee, {Sung Man}",
year = "1997",
month = "10",
day = "27",
doi = "10.1063/1.120086",
language = "English",
volume = "71",
pages = "2451--2453",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "17",

}

Suppression of suicide formation in Ta/Si system by ion-beam-assisted deposition. / Kwak, Joon Seop; Baik, Hong Koo; Kim, Jong Hoon; Lee, Sung Man.

In: Applied Physics Letters, Vol. 71, No. 17, 27.10.1997, p. 2451-2453.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Suppression of suicide formation in Ta/Si system by ion-beam-assisted deposition

AU - Kwak, Joon Seop

AU - Baik, Hong Koo

AU - Kim, Jong Hoon

AU - Lee, Sung Man

PY - 1997/10/27

Y1 - 1997/10/27

N2 - In order to increase the failure temperature of a Ta diffusion barrier for Cu, the suppression of suicide formation in a Ta/Si system by ion-beam-assisted deposition of Ta film was investigated. When the Ta layer was deposited without ion bombardment, the reaction between Ta and Si started at 600 °C. In the case where the Ta film was prepared with concurrent ion bombardment, however, the suicide formation was retarded up to 700 °C. The suppression of Ta suicide formation can be attributed to a densification of grain boundaries in the Ta film by ion bombardment, followed by a reduction of the chemical driving force for the initial stage of suicide formation. The Ta diffusion barrier deposited by ion-beam-assisted deposition effectively suppressed the reaction between Si and Cu layers up to 650 °C for 30 min.

AB - In order to increase the failure temperature of a Ta diffusion barrier for Cu, the suppression of suicide formation in a Ta/Si system by ion-beam-assisted deposition of Ta film was investigated. When the Ta layer was deposited without ion bombardment, the reaction between Ta and Si started at 600 °C. In the case where the Ta film was prepared with concurrent ion bombardment, however, the suicide formation was retarded up to 700 °C. The suppression of Ta suicide formation can be attributed to a densification of grain boundaries in the Ta film by ion bombardment, followed by a reduction of the chemical driving force for the initial stage of suicide formation. The Ta diffusion barrier deposited by ion-beam-assisted deposition effectively suppressed the reaction between Si and Cu layers up to 650 °C for 30 min.

UR - http://www.scopus.com/inward/record.url?scp=0000019733&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000019733&partnerID=8YFLogxK

U2 - 10.1063/1.120086

DO - 10.1063/1.120086

M3 - Article

AN - SCOPUS:0000019733

VL - 71

SP - 2451

EP - 2453

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 17

ER -