Suppression of Temperature Dependence in EDFA Gain by Hybrid Concatenation of Antimony-Doped Silica EDF

U. Ryu, Y. Im, W. Han, K. Oh, D. DiGiovanni, B. Wang, A. Hariharan

Research output: Contribution to conferencePaper

Abstract

A technique to suppress temperature dependence in EDFA gain was demonstrated concatenating Sb-doped silica EDFs between commercial EDF segments. Two types of Sb-doped silica EDF were fabricated that showed opposite signs in temperature dependent gain deviation in comparison with a commercial EDF. Sb-doped silica EDF was found to have an opposite temperature dependent gain coefficient compared with Al-doped silica EDFs. Concatenation of two EDFs resulted in gain variation of less than ±0.25 dB for the saturated gain over 15dB, within -40 to +80 °C.

Original languageEnglish
Pages600-601
Number of pages2
Publication statusPublished - 2003 Dec 1

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Ryu, U., Im, Y., Han, W., Oh, K., DiGiovanni, D., Wang, B., & Hariharan, A. (2003). Suppression of Temperature Dependence in EDFA Gain by Hybrid Concatenation of Antimony-Doped Silica EDF. 600-601.