A technique to suppress temperature dependence in EDFA gain was demonstrated concatenating Sb-doped silica EDFs between commercial EDF segments. Two types of Sb-doped silica EDF were fabricated that showed opposite signs in temperature dependent gain deviation in comparison with a commercial EDF. Sb-doped silica EDF was found to have an opposite temperature dependent gain coefficient compared with Al-doped silica EDFs. Concatenation of two EDFs resulted in gain variation of less than ±0.25 dB for the saturated gain over 15dB, within -40 to +80 °C.
|Number of pages||2|
|Publication status||Published - 2003 Dec 1|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering