Suppression of temperature-dependent gain variation of conventional EDFA by hybrid connection of antimony-doped silica EDF

Uh Chan Ryu, Youngeun Im, Kyunghwan Oh, D. J. DiGiovanni, Baishi Wang, A. Hariharan

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

A new technique to suppress temperature dependence of EDFA gain is proposed and experimentally demonstrated. A specially designed EDF, the glass host of which is Sb-doped silica, showed an opposite sign of temperature dependent gain coefficients in C-band compared to Al-doped silica EDFs. Concatenation of those two EDFs showed an improved gain variation less than ±0.37 dB for the saturated gain over 15 dB. within -40 to +80°C.

Original languageEnglish
Pages (from-to)975-977
Number of pages3
JournalElectronics Letters
Volume39
Issue number13
DOIs
Publication statusPublished - 2003 Jun 25

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Erbium doped fiber amplifiers
Antimony
Silica
Glass
Temperature

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Ryu, Uh Chan ; Im, Youngeun ; Oh, Kyunghwan ; DiGiovanni, D. J. ; Wang, Baishi ; Hariharan, A. / Suppression of temperature-dependent gain variation of conventional EDFA by hybrid connection of antimony-doped silica EDF. In: Electronics Letters. 2003 ; Vol. 39, No. 13. pp. 975-977.
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Suppression of temperature-dependent gain variation of conventional EDFA by hybrid connection of antimony-doped silica EDF. / Ryu, Uh Chan; Im, Youngeun; Oh, Kyunghwan; DiGiovanni, D. J.; Wang, Baishi; Hariharan, A.

In: Electronics Letters, Vol. 39, No. 13, 25.06.2003, p. 975-977.

Research output: Contribution to journalArticle

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AU - Ryu, Uh Chan

AU - Im, Youngeun

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AU - Wang, Baishi

AU - Hariharan, A.

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