A new technique to suppress temperature dependence of EDFA gain is proposed and experimentally demonstrated. A specially designed EDF, the glass host of which is Sb-doped silica, showed an opposite sign of temperature dependent gain coefficients in C-band compared to Al-doped silica EDFs. Concatenation of those two EDFs showed an improved gain variation less than ±0.37 dB for the saturated gain over 15 dB. within -40 to +80°C.
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering