Suppression of temperature-dependent gain variation of conventional EDFA by hybrid connection of antimony-doped silica EDF

Uh Chan Ryu, Youngeun Im, K. Oh, D. J. DiGiovanni, Baishi Wang, A. Hariharan

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

A new technique to suppress temperature dependence of EDFA gain is proposed and experimentally demonstrated. A specially designed EDF, the glass host of which is Sb-doped silica, showed an opposite sign of temperature dependent gain coefficients in C-band compared to Al-doped silica EDFs. Concatenation of those two EDFs showed an improved gain variation less than ±0.37 dB for the saturated gain over 15 dB. within -40 to +80°C.

Original languageEnglish
Pages (from-to)975-977
Number of pages3
JournalElectronics Letters
Volume39
Issue number13
DOIs
Publication statusPublished - 2003 Jun 25

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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