Abstract
The prediction and observation of supra-binary polarization in a ferroelectric nanowire (FNW) covered with a semicylindrical gate that provides an anisotropic electric field in the FNW are reported. There are gate-voltage-driven transitions between four polarization states in the FNW's cross-section, dubbed vertical-up, vertical-down, radial-in, and radial-out. They are determined by the interplay between the spatial depolarization energy and the free energy induced by an anisotropic external electric field, in clear distinction from the conventional film-based binary ferroelectricity. When the FNW is mounted on a biased graphene nanoribbon (GNR), these transitions induce exotic current–voltage hysteresis in the FNW–GNR transistor. This discovery suggests new operating mechanisms of ferroelectric devices. In particular, it enables intrinsic quaternary-digit information manipulation in parallel to the bit manipulation employed in conventional data storage.
Original language | English |
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Article number | 2101981 |
Journal | Advanced Materials |
Volume | 33 |
Issue number | 26 |
DOIs | |
Publication status | Published - 2021 Jul 1 |
Bibliographical note
Funding Information:This research was supported by the National Honor Scientist Program (Grant No. 2010‐0020414) and the Pioneer Research Center Program ICT and Future Planning (Grant No. 2012‐0009460) through the National Research Foundation of Korea. This work was also supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (Ministry of Science and ICT) (Grant No. NRF‐2016R1A3B1908431) and the Creative‐Pioneering Researchers Program through Seoul National University (SNU).
Publisher Copyright:
© 2021 Wiley-VCH GmbH
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering