Surface and interface studies of RF sputtered HfO2 thin films with working pressure and gas flow ratio

K. C. Das, S. P. Ghosh, N. Tripathy, G. Bose, A. Ashok, P. Pal, D. H. Kim, T. I. Lee, J. M. Myoung, J. P. Kar

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

In this work, hafnium oxide (HfO2) thin films were deposited on p-type silicon substrate by radio frequency magnetron sputtering at various working pressure ranging from 4 × 10−3 to 1 × 10−2 mbar and Ar/O2 flow ratio from 1:4 to 4:1. The morphological and electrical properties of the sputtered films were investigated and a correlation between the surface and electrical properties of the HfO2 films was established with the variation of sputtering parameters. The evolution of monoclinic structure of the hafnium oxide thin films was observed by XRD studies. The surface of the HfO2 films became rough with the increase in grain size at the sputter pressure of 8 × 10−3 mbar and Ar/O2 gas flow ratio of 1:4. The formation of HfO2 bond was seen from FTIR spectra. The oxide charge density has a lower value for the sputter pressure of 8 × 10−3 mbar and Ar/O2 gas flow ratio of 1:4 due to the evolution of larger grains. The interface charge density was found to be minimum at a sputter pressure of 8 × 10−3 mbar.

Original languageEnglish
Pages (from-to)6025-6031
Number of pages7
JournalJournal of Materials Science: Materials in Electronics
Volume26
Issue number8
DOIs
Publication statusPublished - 2015 Aug 23

Fingerprint

gas flow
Flow of gases
Hafnium oxides
hafnium oxides
Thin films
thin films
Charge density
Oxide films
Electric properties
electrical properties
Silicon
Magnetron sputtering
Oxides
surface properties
Surface properties
Sputtering
radio frequencies
magnetron sputtering
grain size
sputtering

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Das, K. C. ; Ghosh, S. P. ; Tripathy, N. ; Bose, G. ; Ashok, A. ; Pal, P. ; Kim, D. H. ; Lee, T. I. ; Myoung, J. M. ; Kar, J. P. / Surface and interface studies of RF sputtered HfO2 thin films with working pressure and gas flow ratio. In: Journal of Materials Science: Materials in Electronics. 2015 ; Vol. 26, No. 8. pp. 6025-6031.
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Surface and interface studies of RF sputtered HfO2 thin films with working pressure and gas flow ratio. / Das, K. C.; Ghosh, S. P.; Tripathy, N.; Bose, G.; Ashok, A.; Pal, P.; Kim, D. H.; Lee, T. I.; Myoung, J. M.; Kar, J. P.

In: Journal of Materials Science: Materials in Electronics, Vol. 26, No. 8, 23.08.2015, p. 6025-6031.

Research output: Contribution to journalArticle

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AU - Das, K. C.

AU - Ghosh, S. P.

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AU - Bose, G.

AU - Ashok, A.

AU - Pal, P.

AU - Kim, D. H.

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