Surface-Functionalization-Mediated Direct Transfer of Molybdenum Disulfide for Large-Area Flexible Devices

Sachin M. Shinde, Tanmoy Das, Anh Tuan Hoang, Bhupendra K. Sharma, Xiang Chen, Jong Hyun Ahn

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

The transfer of synthesized large-area 2D materials to arbitrary substrates is expected to be a vital step for the development of flexible device fabrication processes. The currently used hazardous acid-based wet chemical etching process for transferring large-area MoS2 films is deemed to be unsuitable because it significantly degrades the material and damages growth substrates. Surface energy-assisted water-based transfer processes do not require corrosive chemicals during the transfer process; however, the concept is not investigated at the wafer scale due to a lack of both optimization and in-depth understanding. In this study, a wafer-scale water-assisted transfer process for metal–organic chemical vapor-deposited MoS2 films based on the hydrofluoric acid treatment of a SiO2 surface before the growth is demonstrated. Such surface treatment enhances the strongly adhering silanol groups, which allows the direct transfer of large-area, continuous, and defect-free MoS2 films; it also facilitates the reuse of growth substrate. The developed transfer method allows direct fabrication of flexible devices without the need for a polymeric supporting layer. It is believed that the proposed method can be an alternative defect- and residue-free transfer method for the development of MoS2-based next-generation flexible devices.

Original languageEnglish
Article number1706231
JournalAdvanced Functional Materials
Volume28
Issue number13
DOIs
Publication statusPublished - 2018 Mar 28

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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