Surface-induced time-dependent instability of ZnO based thin-film transistors

Ki tae Kim; Kimoon Lee; Min Suk Oh; C. H. Park; Seongil Im

doi:10.1016/j.tsf.2009.02.093

Surface-induced time-dependent instability of ZnO based thin-film transistors

Ki tae Kim, Kimoon Lee, Min Suk Oh, C. H. Park, Seongil Im

Department of Physics

Research output: Contribution to journal › Article

24 Citations (Scopus)

Abstract

We report on the surface-induced time-dependent instability of ZnO based thin-film transistors (ZnO-TFTs) with interdigitated source/drain (S/D) electrodes. As time elapsed, a considerable shift of threshold voltage (V_T) was observed (by ~ - 16 V) from our TFT. Contact angle of de-ionized water on ZnO surface also changed from 30° to 110°, revealing time-dependent surface state change. According to X-ray photoemission spectroscopy (XPS) measurements, the Zn 2p_3/2 core-level peak and the valence band maximum (VBM) of aged ZnO surface shifted to the higher binding energy by 0.3 eV, which implies a downward energy band bending of the ZnO back channel-surface. We conclude that without passivation layer any bottom gate ZnO-TFT meets the surface-induced electrical instabilities due to the time-dependent conductance of ZnO surface.

Original language	English
Pages (from-to)	6345-6348
Number of pages	4
Journal	Thin Solid Films
Volume	517
Issue number	23
DOIs	https://doi.org/10.1016/j.tsf.2009.02.093
Publication status	Published - 2009 Oct 1

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All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Cite this

Kim, K. T., Lee, K., Oh, M. S., Park, C. H., & Im, S. (2009). Surface-induced time-dependent instability of ZnO based thin-film transistors. Thin Solid Films, 517(23), 6345-6348. https://doi.org/10.1016/j.tsf.2009.02.093

@article{7a239f51e43a47c5aabc5acd1071de01,

title = "Surface-induced time-dependent instability of ZnO based thin-film transistors",

abstract = "We report on the surface-induced time-dependent instability of ZnO based thin-film transistors (ZnO-TFTs) with interdigitated source/drain (S/D) electrodes. As time elapsed, a considerable shift of threshold voltage (VT) was observed (by ~ - 16 V) from our TFT. Contact angle of de-ionized water on ZnO surface also changed from 30° to 110°, revealing time-dependent surface state change. According to X-ray photoemission spectroscopy (XPS) measurements, the Zn 2p3/2 core-level peak and the valence band maximum (VBM) of aged ZnO surface shifted to the higher binding energy by 0.3 eV, which implies a downward energy band bending of the ZnO back channel-surface. We conclude that without passivation layer any bottom gate ZnO-TFT meets the surface-induced electrical instabilities due to the time-dependent conductance of ZnO surface.",

author = "Kim, {Ki tae} and Kimoon Lee and Oh, {Min Suk} and Park, {C. H.} and Seongil Im",

year = "2009",

month = oct

day = "1",

doi = "10.1016/j.tsf.2009.02.093",

language = "English",

volume = "517",

pages = "6345--6348",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "23",

}

TY - JOUR

T1 - Surface-induced time-dependent instability of ZnO based thin-film transistors

AU - Kim, Ki tae

AU - Lee, Kimoon

AU - Oh, Min Suk

AU - Park, C. H.

AU - Im, Seongil

PY - 2009/10/1

Y1 - 2009/10/1

N2 - We report on the surface-induced time-dependent instability of ZnO based thin-film transistors (ZnO-TFTs) with interdigitated source/drain (S/D) electrodes. As time elapsed, a considerable shift of threshold voltage (VT) was observed (by ~ - 16 V) from our TFT. Contact angle of de-ionized water on ZnO surface also changed from 30° to 110°, revealing time-dependent surface state change. According to X-ray photoemission spectroscopy (XPS) measurements, the Zn 2p3/2 core-level peak and the valence band maximum (VBM) of aged ZnO surface shifted to the higher binding energy by 0.3 eV, which implies a downward energy band bending of the ZnO back channel-surface. We conclude that without passivation layer any bottom gate ZnO-TFT meets the surface-induced electrical instabilities due to the time-dependent conductance of ZnO surface.

AB - We report on the surface-induced time-dependent instability of ZnO based thin-film transistors (ZnO-TFTs) with interdigitated source/drain (S/D) electrodes. As time elapsed, a considerable shift of threshold voltage (VT) was observed (by ~ - 16 V) from our TFT. Contact angle of de-ionized water on ZnO surface also changed from 30° to 110°, revealing time-dependent surface state change. According to X-ray photoemission spectroscopy (XPS) measurements, the Zn 2p3/2 core-level peak and the valence band maximum (VBM) of aged ZnO surface shifted to the higher binding energy by 0.3 eV, which implies a downward energy band bending of the ZnO back channel-surface. We conclude that without passivation layer any bottom gate ZnO-TFT meets the surface-induced electrical instabilities due to the time-dependent conductance of ZnO surface.

UR - http://www.scopus.com/inward/record.url?scp=68349091584&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=68349091584&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2009.02.093

DO - 10.1016/j.tsf.2009.02.093

M3 - Article

AN - SCOPUS:68349091584

VL - 517

SP - 6345

EP - 6348

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 23

ER -

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10.1016/j.tsf.2009.02.093