Surface-induced time-dependent instability of ZnO based thin-film transistors

Ki tae Kim; Kimoon Lee; Min Suk Oh; C. H. Park; Seongil Im

doi:10.1016/j.tsf.2009.02.093

Surface-induced time-dependent instability of ZnO based thin-film transistors

Ki tae Kim, Kimoon Lee, Min Suk Oh, C. H. Park, Seongil Im

Department of Physics

Research output: Contribution to journal › Article

24 Citations (Scopus)

Abstract

We report on the surface-induced time-dependent instability of ZnO based thin-film transistors (ZnO-TFTs) with interdigitated source/drain (S/D) electrodes. As time elapsed, a considerable shift of threshold voltage (V_T) was observed (by ~ - 16 V) from our TFT. Contact angle of de-ionized water on ZnO surface also changed from 30° to 110°, revealing time-dependent surface state change. According to X-ray photoemission spectroscopy (XPS) measurements, the Zn 2p_3/2 core-level peak and the valence band maximum (VBM) of aged ZnO surface shifted to the higher binding energy by 0.3 eV, which implies a downward energy band bending of the ZnO back channel-surface. We conclude that without passivation layer any bottom gate ZnO-TFT meets the surface-induced electrical instabilities due to the time-dependent conductance of ZnO surface.

Original language	English
Pages (from-to)	6345-6348
Number of pages	4
Journal	Thin Solid Films
Volume	517
Issue number	23
DOIs	https://doi.org/10.1016/j.tsf.2009.02.093
Publication status	Published - 2009 Oct 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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Kim, K. T., Lee, K., Oh, M. S., Park, C. H., & Im, S. (2009). Surface-induced time-dependent instability of ZnO based thin-film transistors. Thin Solid Films, 517(23), 6345-6348. https://doi.org/10.1016/j.tsf.2009.02.093

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abstract = "We report on the surface-induced time-dependent instability of ZnO based thin-film transistors (ZnO-TFTs) with interdigitated source/drain (S/D) electrodes. As time elapsed, a considerable shift of threshold voltage (VT) was observed (by ~ - 16 V) from our TFT. Contact angle of de-ionized water on ZnO surface also changed from 30° to 110°, revealing time-dependent surface state change. According to X-ray photoemission spectroscopy (XPS) measurements, the Zn 2p3/2 core-level peak and the valence band maximum (VBM) of aged ZnO surface shifted to the higher binding energy by 0.3 eV, which implies a downward energy band bending of the ZnO back channel-surface. We conclude that without passivation layer any bottom gate ZnO-TFT meets the surface-induced electrical instabilities due to the time-dependent conductance of ZnO surface.",

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N2 - We report on the surface-induced time-dependent instability of ZnO based thin-film transistors (ZnO-TFTs) with interdigitated source/drain (S/D) electrodes. As time elapsed, a considerable shift of threshold voltage (VT) was observed (by ~ - 16 V) from our TFT. Contact angle of de-ionized water on ZnO surface also changed from 30° to 110°, revealing time-dependent surface state change. According to X-ray photoemission spectroscopy (XPS) measurements, the Zn 2p3/2 core-level peak and the valence band maximum (VBM) of aged ZnO surface shifted to the higher binding energy by 0.3 eV, which implies a downward energy band bending of the ZnO back channel-surface. We conclude that without passivation layer any bottom gate ZnO-TFT meets the surface-induced electrical instabilities due to the time-dependent conductance of ZnO surface.

AB - We report on the surface-induced time-dependent instability of ZnO based thin-film transistors (ZnO-TFTs) with interdigitated source/drain (S/D) electrodes. As time elapsed, a considerable shift of threshold voltage (VT) was observed (by ~ - 16 V) from our TFT. Contact angle of de-ionized water on ZnO surface also changed from 30° to 110°, revealing time-dependent surface state change. According to X-ray photoemission spectroscopy (XPS) measurements, the Zn 2p3/2 core-level peak and the valence band maximum (VBM) of aged ZnO surface shifted to the higher binding energy by 0.3 eV, which implies a downward energy band bending of the ZnO back channel-surface. We conclude that without passivation layer any bottom gate ZnO-TFT meets the surface-induced electrical instabilities due to the time-dependent conductance of ZnO surface.

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