Surface-induced time-dependent instability of ZnO based thin-film transistors

Ki tae Kim, Kimoon Lee, Min Suk Oh, C. H. Park, Seongil Im

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

We report on the surface-induced time-dependent instability of ZnO based thin-film transistors (ZnO-TFTs) with interdigitated source/drain (S/D) electrodes. As time elapsed, a considerable shift of threshold voltage (VT) was observed (by ~ - 16 V) from our TFT. Contact angle of de-ionized water on ZnO surface also changed from 30° to 110°, revealing time-dependent surface state change. According to X-ray photoemission spectroscopy (XPS) measurements, the Zn 2p3/2 core-level peak and the valence band maximum (VBM) of aged ZnO surface shifted to the higher binding energy by 0.3 eV, which implies a downward energy band bending of the ZnO back channel-surface. We conclude that without passivation layer any bottom gate ZnO-TFT meets the surface-induced electrical instabilities due to the time-dependent conductance of ZnO surface.

Original languageEnglish
Pages (from-to)6345-6348
Number of pages4
JournalThin Solid Films
Volume517
Issue number23
DOIs
Publication statusPublished - 2009 Oct 1

Fingerprint

Thin film transistors
transistors
thin films
Core levels
Surface states
Photoelectron spectroscopy
Valence bands
X ray spectroscopy
Binding energy
Threshold voltage
Passivation
Band structure
Contact angle
threshold voltage
passivity
energy bands
photoelectric emission
binding energy
Electrodes
Water

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Kim, Ki tae ; Lee, Kimoon ; Oh, Min Suk ; Park, C. H. ; Im, Seongil. / Surface-induced time-dependent instability of ZnO based thin-film transistors. In: Thin Solid Films. 2009 ; Vol. 517, No. 23. pp. 6345-6348.
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Surface-induced time-dependent instability of ZnO based thin-film transistors. / Kim, Ki tae; Lee, Kimoon; Oh, Min Suk; Park, C. H.; Im, Seongil.

In: Thin Solid Films, Vol. 517, No. 23, 01.10.2009, p. 6345-6348.

Research output: Contribution to journalArticle

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AB - We report on the surface-induced time-dependent instability of ZnO based thin-film transistors (ZnO-TFTs) with interdigitated source/drain (S/D) electrodes. As time elapsed, a considerable shift of threshold voltage (VT) was observed (by ~ - 16 V) from our TFT. Contact angle of de-ionized water on ZnO surface also changed from 30° to 110°, revealing time-dependent surface state change. According to X-ray photoemission spectroscopy (XPS) measurements, the Zn 2p3/2 core-level peak and the valence band maximum (VBM) of aged ZnO surface shifted to the higher binding energy by 0.3 eV, which implies a downward energy band bending of the ZnO back channel-surface. We conclude that without passivation layer any bottom gate ZnO-TFT meets the surface-induced electrical instabilities due to the time-dependent conductance of ZnO surface.

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