Surface-induced time-dependent instability of ZnO based thin-film transistors

Ki tae Kim; Kimoon Lee; Min Suk Oh; C. H. Park; Seongil Im

doi:10.1016/j.tsf.2009.02.093

Surface-induced time-dependent instability of ZnO based thin-film transistors

Ki tae Kim, Kimoon Lee, Min Suk Oh, C. H. Park, Seongil Im

Department of Physics

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

We report on the surface-induced time-dependent instability of ZnO based thin-film transistors (ZnO-TFTs) with interdigitated source/drain (S/D) electrodes. As time elapsed, a considerable shift of threshold voltage (V_T) was observed (by ~ - 16 V) from our TFT. Contact angle of de-ionized water on ZnO surface also changed from 30° to 110°, revealing time-dependent surface state change. According to X-ray photoemission spectroscopy (XPS) measurements, the Zn 2p_3/2 core-level peak and the valence band maximum (VBM) of aged ZnO surface shifted to the higher binding energy by 0.3 eV, which implies a downward energy band bending of the ZnO back channel-surface. We conclude that without passivation layer any bottom gate ZnO-TFT meets the surface-induced electrical instabilities due to the time-dependent conductance of ZnO surface.

Original language	English
Pages (from-to)	6345-6348
Number of pages	4
Journal	Thin Solid Films
Volume	517
Issue number	23
DOIs	https://doi.org/10.1016/j.tsf.2009.02.093
Publication status	Published - 2009 Oct 1

Bibliographical note

Funding Information:
This work was supported by the fundamental R&D Program for Core Technology of Materials funded by the Ministry of Commerce, Industry and Energy, KOSEF (R01-2006-000-11277-0), the IT R&D program of MKE/IITA [2006-S079-02, Smart window with transparent electronic devices], and Brain Korea 21 Program.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2009.02.093

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title = "Surface-induced time-dependent instability of ZnO based thin-film transistors",

abstract = "We report on the surface-induced time-dependent instability of ZnO based thin-film transistors (ZnO-TFTs) with interdigitated source/drain (S/D) electrodes. As time elapsed, a considerable shift of threshold voltage (VT) was observed (by ~ - 16 V) from our TFT. Contact angle of de-ionized water on ZnO surface also changed from 30° to 110°, revealing time-dependent surface state change. According to X-ray photoemission spectroscopy (XPS) measurements, the Zn 2p3/2 core-level peak and the valence band maximum (VBM) of aged ZnO surface shifted to the higher binding energy by 0.3 eV, which implies a downward energy band bending of the ZnO back channel-surface. We conclude that without passivation layer any bottom gate ZnO-TFT meets the surface-induced electrical instabilities due to the time-dependent conductance of ZnO surface.",

author = "Kim, {Ki tae} and Kimoon Lee and Oh, {Min Suk} and Park, {C. H.} and Seongil Im",

note = "Funding Information: This work was supported by the fundamental R&D Program for Core Technology of Materials funded by the Ministry of Commerce, Industry and Energy, KOSEF (R01-2006-000-11277-0), the IT R&D program of MKE/IITA [2006-S079-02, Smart window with transparent electronic devices], and Brain Korea 21 Program. ",

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doi = "10.1016/j.tsf.2009.02.093",

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AU - Kim, Ki tae

AU - Lee, Kimoon

AU - Oh, Min Suk

AU - Park, C. H.

AU - Im, Seongil

N1 - Funding Information: This work was supported by the fundamental R&D Program for Core Technology of Materials funded by the Ministry of Commerce, Industry and Energy, KOSEF (R01-2006-000-11277-0), the IT R&D program of MKE/IITA [2006-S079-02, Smart window with transparent electronic devices], and Brain Korea 21 Program.

PY - 2009/10/1

Y1 - 2009/10/1

N2 - We report on the surface-induced time-dependent instability of ZnO based thin-film transistors (ZnO-TFTs) with interdigitated source/drain (S/D) electrodes. As time elapsed, a considerable shift of threshold voltage (VT) was observed (by ~ - 16 V) from our TFT. Contact angle of de-ionized water on ZnO surface also changed from 30° to 110°, revealing time-dependent surface state change. According to X-ray photoemission spectroscopy (XPS) measurements, the Zn 2p3/2 core-level peak and the valence band maximum (VBM) of aged ZnO surface shifted to the higher binding energy by 0.3 eV, which implies a downward energy band bending of the ZnO back channel-surface. We conclude that without passivation layer any bottom gate ZnO-TFT meets the surface-induced electrical instabilities due to the time-dependent conductance of ZnO surface.

AB - We report on the surface-induced time-dependent instability of ZnO based thin-film transistors (ZnO-TFTs) with interdigitated source/drain (S/D) electrodes. As time elapsed, a considerable shift of threshold voltage (VT) was observed (by ~ - 16 V) from our TFT. Contact angle of de-ionized water on ZnO surface also changed from 30° to 110°, revealing time-dependent surface state change. According to X-ray photoemission spectroscopy (XPS) measurements, the Zn 2p3/2 core-level peak and the valence band maximum (VBM) of aged ZnO surface shifted to the higher binding energy by 0.3 eV, which implies a downward energy band bending of the ZnO back channel-surface. We conclude that without passivation layer any bottom gate ZnO-TFT meets the surface-induced electrical instabilities due to the time-dependent conductance of ZnO surface.

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Surface-induced time-dependent instability of ZnO based thin-film transistors

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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