Abstract
We report on the surface-induced time-dependent instability of ZnO based thin-film transistors (ZnO-TFTs) with interdigitated source/drain (S/D) electrodes. As time elapsed, a considerable shift of threshold voltage (VT) was observed (by ~ - 16 V) from our TFT. Contact angle of de-ionized water on ZnO surface also changed from 30° to 110°, revealing time-dependent surface state change. According to X-ray photoemission spectroscopy (XPS) measurements, the Zn 2p3/2 core-level peak and the valence band maximum (VBM) of aged ZnO surface shifted to the higher binding energy by 0.3 eV, which implies a downward energy band bending of the ZnO back channel-surface. We conclude that without passivation layer any bottom gate ZnO-TFT meets the surface-induced electrical instabilities due to the time-dependent conductance of ZnO surface.
| Original language | English |
|---|---|
| Pages (from-to) | 6345-6348 |
| Number of pages | 4 |
| Journal | Thin Solid Films |
| Volume | 517 |
| Issue number | 23 |
| DOIs | |
| Publication status | Published - 2009 Oct 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
Cite this
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Surface-induced time-dependent instability of ZnO based thin-film transistors. / Kim, Ki tae; Lee, Kimoon; Oh, Min Suk; Park, C. H.; Im, Seongil.
In: Thin Solid Films, Vol. 517, No. 23, 01.10.2009, p. 6345-6348.Research output: Contribution to journal › Article
TY - JOUR
T1 - Surface-induced time-dependent instability of ZnO based thin-film transistors
AU - Kim, Ki tae
AU - Lee, Kimoon
AU - Oh, Min Suk
AU - Park, C. H.
AU - Im, Seongil
PY - 2009/10/1
Y1 - 2009/10/1
N2 - We report on the surface-induced time-dependent instability of ZnO based thin-film transistors (ZnO-TFTs) with interdigitated source/drain (S/D) electrodes. As time elapsed, a considerable shift of threshold voltage (VT) was observed (by ~ - 16 V) from our TFT. Contact angle of de-ionized water on ZnO surface also changed from 30° to 110°, revealing time-dependent surface state change. According to X-ray photoemission spectroscopy (XPS) measurements, the Zn 2p3/2 core-level peak and the valence band maximum (VBM) of aged ZnO surface shifted to the higher binding energy by 0.3 eV, which implies a downward energy band bending of the ZnO back channel-surface. We conclude that without passivation layer any bottom gate ZnO-TFT meets the surface-induced electrical instabilities due to the time-dependent conductance of ZnO surface.
AB - We report on the surface-induced time-dependent instability of ZnO based thin-film transistors (ZnO-TFTs) with interdigitated source/drain (S/D) electrodes. As time elapsed, a considerable shift of threshold voltage (VT) was observed (by ~ - 16 V) from our TFT. Contact angle of de-ionized water on ZnO surface also changed from 30° to 110°, revealing time-dependent surface state change. According to X-ray photoemission spectroscopy (XPS) measurements, the Zn 2p3/2 core-level peak and the valence band maximum (VBM) of aged ZnO surface shifted to the higher binding energy by 0.3 eV, which implies a downward energy band bending of the ZnO back channel-surface. We conclude that without passivation layer any bottom gate ZnO-TFT meets the surface-induced electrical instabilities due to the time-dependent conductance of ZnO surface.
UR - http://www.scopus.com/inward/record.url?scp=68349091584&partnerID=8YFLogxK
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U2 - 10.1016/j.tsf.2009.02.093
DO - 10.1016/j.tsf.2009.02.093
M3 - Article
AN - SCOPUS:68349091584
VL - 517
SP - 6345
EP - 6348
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 23
ER -