Surface-Localized Sealing of Porous Ultralow-k Dielectric Films with Ultrathin (<2 nm) Polymer Coating

Seong Jun Yoon, Kwanyong Pak, Taewook Nam, Alexander Yoon, Hyungjun Kim, Sung Gap Im, Byung Jin Cho

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Semiconductor integrated circuit chip industries have been striving to introduce porous ultralow-k (ULK) dielectrics into the multilevel interconnection process in order to improve their chip operation speed by reducing capacitance along the signal path. To date, however, highly porous ULK dielectrics (porosity >40%, dielectric constant (k) <2.4) have not been successfully adopted in real devices because the porous nature causes many serious problems, including noncontinuous barrier deposition, penetration of the barrier metal, and reliability issues. Here, a method that allows porous ULK dielectrics to be successfully used with a multilevel interconnection scheme is presented. The surface of the porous ULK dielectric film (k = 2.0, porosity ∼47%) could be completely sealed by a thin (<2 nm) polymer deposited by a multistep initiated chemical vapor deposition (iCVD) process. Using the iCVD process, a thin pore-sealing layer was localized only to the surface of the porous ULK dielectric film, which could minimize the increase of k; the final effective k was less than 2.2, and the penetration of metal barrier precursors into the dielectric film was completely blocked. The pore-sealed ULK dielectric film also exhibited excellent long-term reliability comparable to a dense low-k dielectric film.

Original languageEnglish
Pages (from-to)7841-7847
Number of pages7
JournalACS Nano
Volume11
Issue number8
DOIs
Publication statusPublished - 2017 Aug 22

Fingerprint

Dielectric films
sealing
Polymers
coatings
Coatings
polymers
Chemical vapor deposition
porosity
Porosity
Metals
penetration
chips
vapor deposition
Integrated circuits
Permittivity
Capacitance
Semiconductor materials
metals
integrated circuits
capacitance

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Yoon, Seong Jun ; Pak, Kwanyong ; Nam, Taewook ; Yoon, Alexander ; Kim, Hyungjun ; Im, Sung Gap ; Cho, Byung Jin. / Surface-Localized Sealing of Porous Ultralow-k Dielectric Films with Ultrathin (<2 nm) Polymer Coating. In: ACS Nano. 2017 ; Vol. 11, No. 8. pp. 7841-7847.
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Surface-Localized Sealing of Porous Ultralow-k Dielectric Films with Ultrathin (<2 nm) Polymer Coating. / Yoon, Seong Jun; Pak, Kwanyong; Nam, Taewook; Yoon, Alexander; Kim, Hyungjun; Im, Sung Gap; Cho, Byung Jin.

In: ACS Nano, Vol. 11, No. 8, 22.08.2017, p. 7841-7847.

Research output: Contribution to journalArticle

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