Surface modified SiO2 xerogel films from HMDS/Acetone for intermetal dielectrics

Hong Ryul Kim, Hyung Ho Park

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this study, a novel sol-gel synthesis procedure using HMDS as surface modifier and acetone as solvent without solvent exchange step for the preparation of SiO2 xerogel thin film is proposed. The concentration of modifying agent as HMDS was also optimized for the high porous SiO2 xerogel film. The microstructural and electrical properties of SiO2 xerogel films for applications as intermetal dielectrics according to the new method were studied.

Original languageEnglish
Title of host publicationDigest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages218-219
Number of pages2
ISBN (Electronic)4891140046, 9784891140045
DOIs
Publication statusPublished - 2000 Jan 1
EventInternational Microprocesses and Nanotechnology Conference, MNC 2000 - Tokyo, Japan
Duration: 2000 Jul 112000 Jul 13

Other

OtherInternational Microprocesses and Nanotechnology Conference, MNC 2000
CountryJapan
CityTokyo
Period00/7/1100/7/13

All Science Journal Classification (ASJC) codes

  • Biotechnology
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Kim, H. R., & Park, H. H. (2000). Surface modified SiO2 xerogel films from HMDS/Acetone for intermetal dielectrics. In Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000 (pp. 218-219). [872720] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMNC.2000.872720