Surface oxygen vacancy origin of electron accumulation in indium oxide

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Abstract

Metal oxides are typically insulating materials that can be made conductive through aliovalent doping and/or non-stoichiometry. Recent studies have identified conductive states at surfaces and interfaces of pure oxide materials; high electron concentrations are present, resulting in a high-mobility two-dimensional electron gas. We demonstrate for In2O3 that the energy required to form an oxygen vacancy decreases rapidly towards the (111) surface, where the coordination environment is lowered. This is a general feature of metal oxide systems that can result in a metal-insulator transition where donors are produced at chemically reduced extended defects.

Original languageEnglish
Article number261910
JournalApplied Physics Letters
Volume98
Issue number26
DOIs
Publication statusPublished - 2011 Jun 27

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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