Surface properties of GaAs passivated with (NH4)2Sx solution

Kyung Soo Suh, Hyung Ho Park, Jong Lam Lee, Haechon Kim, Kyung Ik Cho, Kyung Soo Kim

Research output: Contribution to journalConference article

Abstract

Surface properties of GaAs passivated with (NH4)2Sx solution have been compared with HC1-treated GaAs using X-ray photoelectron spectroscopy. Sulfur treatment on GaAs surface results in the formation of S-Ga and S-As bonds, which remain after successive rinsing for 1 minute in DI water. The evolution of Ga 2p3 and As 3d peaks in the sulfidation treated GaAs was monitored with the exposing time to air. After 10 days exposure to air, the Ga-O and As-O bonds slightly increased, but maintained almost constant for further exposure. The increase of Ga-O and As-O bonds induces the partial decomposition of sulfur bonds. Decomposition and evaporation behaviors of sulfur and oxygen were observed through the heat treatment of sulfidation treated GaAs under ultra high vacuum (less than 1×10-9 torr). After anneal at 350 - 450 °C, slight decrease of sulfur and oxygen due to the decomposition of As-O bond were observed. No more sulfur was found after anneal at 550 - 650 °C, where the decomposition of Ga-O bond was completed.

Original languageEnglish
Pages (from-to)333-338
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume386
Publication statusPublished - 1995 Dec 1

Fingerprint

Sulfur
surface properties
Surface properties
sulfur
Decomposition
sulfidation
decomposition
Oxygen
air
Ultrahigh vacuum
oxygen
Air
ultrahigh vacuum
Evaporation
heat treatment
X ray photoelectron spectroscopy
Heat treatment
gallium arsenide
evaporation
photoelectron spectroscopy

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Suh, K. S., Park, H. H., Lee, J. L., Kim, H., Cho, K. I., & Kim, K. S. (1995). Surface properties of GaAs passivated with (NH4)2Sx solution. Materials Research Society Symposium - Proceedings, 386, 333-338.
Suh, Kyung Soo ; Park, Hyung Ho ; Lee, Jong Lam ; Kim, Haechon ; Cho, Kyung Ik ; Kim, Kyung Soo. / Surface properties of GaAs passivated with (NH4)2Sx solution. In: Materials Research Society Symposium - Proceedings. 1995 ; Vol. 386. pp. 333-338.
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Surface properties of GaAs passivated with (NH4)2Sx solution. / Suh, Kyung Soo; Park, Hyung Ho; Lee, Jong Lam; Kim, Haechon; Cho, Kyung Ik; Kim, Kyung Soo.

In: Materials Research Society Symposium - Proceedings, Vol. 386, 01.12.1995, p. 333-338.

Research output: Contribution to journalConference article

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T1 - Surface properties of GaAs passivated with (NH4)2Sx solution

AU - Suh, Kyung Soo

AU - Park, Hyung Ho

AU - Lee, Jong Lam

AU - Kim, Haechon

AU - Cho, Kyung Ik

AU - Kim, Kyung Soo

PY - 1995/12/1

Y1 - 1995/12/1

N2 - Surface properties of GaAs passivated with (NH4)2Sx solution have been compared with HC1-treated GaAs using X-ray photoelectron spectroscopy. Sulfur treatment on GaAs surface results in the formation of S-Ga and S-As bonds, which remain after successive rinsing for 1 minute in DI water. The evolution of Ga 2p3 and As 3d peaks in the sulfidation treated GaAs was monitored with the exposing time to air. After 10 days exposure to air, the Ga-O and As-O bonds slightly increased, but maintained almost constant for further exposure. The increase of Ga-O and As-O bonds induces the partial decomposition of sulfur bonds. Decomposition and evaporation behaviors of sulfur and oxygen were observed through the heat treatment of sulfidation treated GaAs under ultra high vacuum (less than 1×10-9 torr). After anneal at 350 - 450 °C, slight decrease of sulfur and oxygen due to the decomposition of As-O bond were observed. No more sulfur was found after anneal at 550 - 650 °C, where the decomposition of Ga-O bond was completed.

AB - Surface properties of GaAs passivated with (NH4)2Sx solution have been compared with HC1-treated GaAs using X-ray photoelectron spectroscopy. Sulfur treatment on GaAs surface results in the formation of S-Ga and S-As bonds, which remain after successive rinsing for 1 minute in DI water. The evolution of Ga 2p3 and As 3d peaks in the sulfidation treated GaAs was monitored with the exposing time to air. After 10 days exposure to air, the Ga-O and As-O bonds slightly increased, but maintained almost constant for further exposure. The increase of Ga-O and As-O bonds induces the partial decomposition of sulfur bonds. Decomposition and evaporation behaviors of sulfur and oxygen were observed through the heat treatment of sulfidation treated GaAs under ultra high vacuum (less than 1×10-9 torr). After anneal at 350 - 450 °C, slight decrease of sulfur and oxygen due to the decomposition of As-O bond were observed. No more sulfur was found after anneal at 550 - 650 °C, where the decomposition of Ga-O bond was completed.

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