Surface property controllable multilayered gate dielectric for low voltage organic thin film transistors

Sung Jin Jo; Chang Su Kim; Jong Bok Kim; Joohee Kim; Min Jung Lee; Hyeon Seok Hwang; Hong Koo Baik; Youn Sang Kim

doi:10.1063/1.2973160

Surface property controllable multilayered gate dielectric for low voltage organic thin film transistors

Sung Jin Jo, Chang Su Kim, Jong Bok Kim, Joohee Kim, Min Jung Lee, Hyeon Seok Hwang, Hong Koo Baik, Youn Sang Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We report the effects of dielectric surface properties on the device performance of organic thin film transistors (OTFTs) using polymer/high- k oxide multilayered gate dielectrics. We systematically controlled the surface energy of the gate dielectric from very hydrophobic to very hydrophilic. The modified dielectric surface strongly affected the initial growth mechanism of pentacene and subsequently the performance of the OTFTs. The performance of the OTFTs with a higher surface energy was superior to that of the OTFTs with a lower surface energy.

Original language	English
Article number	083504
Journal	Applied Physics Letters
Volume	93
Issue number	8
DOIs	https://doi.org/10.1063/1.2973160
Publication status	Published - 2008

Bibliographical note

Funding Information:
This work was supported by the SRC Program of MOST/KOSEF through the Center for Intelligent Nano-Bio Materials at Ewha Womans University (Grant No. R11-2005-008-00000-0), the Seoul Research and Business Development Program (Grant No. 10816), and the “SystemIC2010” Project of Korea Ministry of Knowledge Economy. Also, the authors are appreciative of the financial support from LG Display.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2973160

Cite this

@article{b19546f6297b4a51bb5586a4eb99d196,

title = "Surface property controllable multilayered gate dielectric for low voltage organic thin film transistors",

abstract = "We report the effects of dielectric surface properties on the device performance of organic thin film transistors (OTFTs) using polymer/high- k oxide multilayered gate dielectrics. We systematically controlled the surface energy of the gate dielectric from very hydrophobic to very hydrophilic. The modified dielectric surface strongly affected the initial growth mechanism of pentacene and subsequently the performance of the OTFTs. The performance of the OTFTs with a higher surface energy was superior to that of the OTFTs with a lower surface energy.",

author = "Jo, {Sung Jin} and Kim, {Chang Su} and Kim, {Jong Bok} and Joohee Kim and Lee, {Min Jung} and Hwang, {Hyeon Seok} and Baik, {Hong Koo} and Kim, {Youn Sang}",

note = "Funding Information: This work was supported by the SRC Program of MOST/KOSEF through the Center for Intelligent Nano-Bio Materials at Ewha Womans University (Grant No. R11-2005-008-00000-0), the Seoul Research and Business Development Program (Grant No. 10816), and the “SystemIC2010” Project of Korea Ministry of Knowledge Economy. Also, the authors are appreciative of the financial support from LG Display.",

year = "2008",

doi = "10.1063/1.2973160",

language = "English",

volume = "93",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "8",

}

TY - JOUR

T1 - Surface property controllable multilayered gate dielectric for low voltage organic thin film transistors

AU - Jo, Sung Jin

AU - Kim, Chang Su

AU - Kim, Jong Bok

AU - Kim, Joohee

AU - Lee, Min Jung

AU - Hwang, Hyeon Seok

AU - Baik, Hong Koo

AU - Kim, Youn Sang

N1 - Funding Information: This work was supported by the SRC Program of MOST/KOSEF through the Center for Intelligent Nano-Bio Materials at Ewha Womans University (Grant No. R11-2005-008-00000-0), the Seoul Research and Business Development Program (Grant No. 10816), and the “SystemIC2010” Project of Korea Ministry of Knowledge Economy. Also, the authors are appreciative of the financial support from LG Display.

PY - 2008

Y1 - 2008

N2 - We report the effects of dielectric surface properties on the device performance of organic thin film transistors (OTFTs) using polymer/high- k oxide multilayered gate dielectrics. We systematically controlled the surface energy of the gate dielectric from very hydrophobic to very hydrophilic. The modified dielectric surface strongly affected the initial growth mechanism of pentacene and subsequently the performance of the OTFTs. The performance of the OTFTs with a higher surface energy was superior to that of the OTFTs with a lower surface energy.

AB - We report the effects of dielectric surface properties on the device performance of organic thin film transistors (OTFTs) using polymer/high- k oxide multilayered gate dielectrics. We systematically controlled the surface energy of the gate dielectric from very hydrophobic to very hydrophilic. The modified dielectric surface strongly affected the initial growth mechanism of pentacene and subsequently the performance of the OTFTs. The performance of the OTFTs with a higher surface energy was superior to that of the OTFTs with a lower surface energy.

UR - http://www.scopus.com/inward/record.url?scp=51349108205&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=51349108205&partnerID=8YFLogxK

U2 - 10.1063/1.2973160

DO - 10.1063/1.2973160

M3 - Article

AN - SCOPUS:51349108205

SN - 0003-6951

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 083504

ER -

Surface property controllable multilayered gate dielectric for low voltage organic thin film transistors

Abstract

Bibliographical note

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