The bipolar resistive switching mechanisms of a p-type NiO film and n-type TiO2 film were examined using local probe-based measurements. Scanning probe-based current-voltage (I-V) sweeps and surface potential/current maps obtained after the application of dc bias suggested that resistive switching is caused mainly by the surface redox reactions involving oxygen ions at the tip/oxide interface. This explanation can be applied generally to both p-type and n-type conducting resistive switching films. The contribution of oxygen migration to resistive switching was also observed indirectly, but only in the cases where the tip was in (quasi-) Ohmic contact with the oxide.
|Number of pages||8|
|Journal||Applied Physics A: Materials Science and Processing|
|Publication status||Published - 2011 Mar|
All Science Journal Classification (ASJC) codes
- Materials Science(all)