Surface redox induced bipolar switching of transition metal oxide films examined by scanning probe microscopy

Min Hwan Lee; Kyung Min Kim; Seul Ji Song; Sang Ho Rha; Jun Yeong Seok; Ji Sim Jung; Gun Hwan Kim; Jung Ho Yoon; Cheol Seong Hwang

doi:10.1007/s00339-011-6266-7

Surface redox induced bipolar switching of transition metal oxide films examined by scanning probe microscopy

Min Hwan Lee, Kyung Min Kim, Seul Ji Song, Sang Ho Rha, Jun Yeong Seok, Ji Sim Jung, Gun Hwan Kim, Jung Ho Yoon, Cheol Seong Hwang

School of System & Semiconductor Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The bipolar resistive switching mechanisms of a p-type NiO film and n-type TiO₂ film were examined using local probe-based measurements. Scanning probe-based current-voltage (I-V) sweeps and surface potential/current maps obtained after the application of dc bias suggested that resistive switching is caused mainly by the surface redox reactions involving oxygen ions at the tip/oxide interface. This explanation can be applied generally to both p-type and n-type conducting resistive switching films. The contribution of oxygen migration to resistive switching was also observed indirectly, but only in the cases where the tip was in (quasi-) Ohmic contact with the oxide.

Original language	English
Pages (from-to)	827-834
Number of pages	8
Journal	Applied Physics A: Materials Science and Processing
Volume	102
Issue number	4
DOIs	https://doi.org/10.1007/s00339-011-6266-7
Publication status	Published - 2011 Mar

All Science Journal Classification (ASJC) codes

Chemistry(all)
Materials Science(all)

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title = "Surface redox induced bipolar switching of transition metal oxide films examined by scanning probe microscopy",

abstract = "The bipolar resistive switching mechanisms of a p-type NiO film and n-type TiO2 film were examined using local probe-based measurements. Scanning probe-based current-voltage (I-V) sweeps and surface potential/current maps obtained after the application of dc bias suggested that resistive switching is caused mainly by the surface redox reactions involving oxygen ions at the tip/oxide interface. This explanation can be applied generally to both p-type and n-type conducting resistive switching films. The contribution of oxygen migration to resistive switching was also observed indirectly, but only in the cases where the tip was in (quasi-) Ohmic contact with the oxide.",

author = "Lee, {Min Hwan} and Kim, {Kyung Min} and Song, {Seul Ji} and Rha, {Sang Ho} and Seok, {Jun Yeong} and Jung, {Ji Sim} and Kim, {Gun Hwan} and Yoon, {Jung Ho} and Hwang, {Cheol Seong}",

year = "2011",

month = mar,

doi = "10.1007/s00339-011-6266-7",

language = "English",

volume = "102",

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journal = "Applied Physics A: Materials Science and Processing",

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T1 - Surface redox induced bipolar switching of transition metal oxide films examined by scanning probe microscopy

AU - Lee, Min Hwan

AU - Kim, Kyung Min

AU - Song, Seul Ji

AU - Rha, Sang Ho

AU - Seok, Jun Yeong

AU - Jung, Ji Sim

AU - Kim, Gun Hwan

AU - Yoon, Jung Ho

AU - Hwang, Cheol Seong

PY - 2011/3

Y1 - 2011/3

N2 - The bipolar resistive switching mechanisms of a p-type NiO film and n-type TiO2 film were examined using local probe-based measurements. Scanning probe-based current-voltage (I-V) sweeps and surface potential/current maps obtained after the application of dc bias suggested that resistive switching is caused mainly by the surface redox reactions involving oxygen ions at the tip/oxide interface. This explanation can be applied generally to both p-type and n-type conducting resistive switching films. The contribution of oxygen migration to resistive switching was also observed indirectly, but only in the cases where the tip was in (quasi-) Ohmic contact with the oxide.

AB - The bipolar resistive switching mechanisms of a p-type NiO film and n-type TiO2 film were examined using local probe-based measurements. Scanning probe-based current-voltage (I-V) sweeps and surface potential/current maps obtained after the application of dc bias suggested that resistive switching is caused mainly by the surface redox reactions involving oxygen ions at the tip/oxide interface. This explanation can be applied generally to both p-type and n-type conducting resistive switching films. The contribution of oxygen migration to resistive switching was also observed indirectly, but only in the cases where the tip was in (quasi-) Ohmic contact with the oxide.

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JO - Applied Physics A: Materials Science and Processing

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Surface redox induced bipolar switching of transition metal oxide films examined by scanning probe microscopy

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