Surface reformation on solution-derived Zn-doped GaO films via ion-beam bombardment

Hong Gyu Park, Yun Gun Lee, Hae Chang Jeong, Ju Hwan Lee, Sang Bok Jang, Byeong Yun Oh, Jeong Min Han, Dae-Shik Seo

Research output: Contribution to journalArticle

Abstract

In this paper, we demonstrated homogenous liquid crystal (LC) alignment on solution-derived ZnGaO films that have been subjected to ion-beam (IB) irradiation. To investigate the effects of the growth temperature of the ZnGaO films and the IB irradiation upon the resulting films, we conducted a series of physicochemical analyses. We found that amorphous ZnGaO films were obtained regardless of the growth temperature. These resulting films have a high transparency and can be used as LC alignment layers. Using contact angle measurements, the existence of residual solvents in the ZnGaO films was proven at a growth temperature of 200°C; the presence of these solvents adversely affected the electro-optical properties of twisted-nematic (TN) cells that utilized these films. At a growth temperature of 300°C, the best electro-optical properties for TN cells with IB-irradiated ZnGaO films were achieved.

Original languageEnglish
Pages (from-to)10802-10805
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume16
Issue number10
DOIs
Publication statusPublished - 2016 Oct 1

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All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Park, H. G., Lee, Y. G., Jeong, H. C., Lee, J. H., Jang, S. B., Oh, B. Y., Han, J. M., & Seo, D-S. (2016). Surface reformation on solution-derived Zn-doped GaO films via ion-beam bombardment. Journal of Nanoscience and Nanotechnology, 16(10), 10802-10805. https://doi.org/10.1166/jnn.2016.13243