Surface scaling evolution and dielectric properties of sputter-deposited low loss Mg2SiO4 thin films

Chan Su Han, Bhaskar Chandra Mohanty, Hong Rak Choi, Yong Soo Cho

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The evolution of surface roughness and dielectric properties of sputter-deposited Mg2SiO4 thin films have been studied. Analysis of height-height correlation function and power spectrum densities of the atomic force microscope images revealed that the growth surface experiences a difference in short-range and global roughening, indicating an anomalous scaling (super-rough) behavior. The growth exponent β=0.9 suggests that the growth instability due to the shadowing far outweighs the effects of a high substrate temperature (700°C). The dielectric loss tangent showed a pronounced dependence on deposition time, while dielectric constant remained unchanged at the bulk value; the changes in the grain structure via the evolution of surface scaling are suggested as a contributing factor.

Original languageEnglish
Pages (from-to)229-233
Number of pages5
JournalSurface and Coatings Technology
Volume231
DOIs
Publication statusPublished - 2013 Sep 25

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Surface scaling evolution and dielectric properties of sputter-deposited low loss Mg<sub>2</sub>SiO<sub>4</sub> thin films'. Together they form a unique fingerprint.

  • Cite this