Surface-tension-tailored aqueous ink for low-temperature deposition of high-k HfO2 thin film

Sun Woong Han, Keun Ho Lee, Young Bum Yoo, Jee Ho Park, Kie Moon Song, Hong Koo Baik

Research output: Contribution to journalArticle

Abstract

In this paper, solution-based deposition of HfO2 thin film at low temperature was demonstrated. By using aqueous HfCl4 solution, the precursor was effectively decomposed with low annealing temperature of 150 °C. Thus it is preferable to use this solution for dielectric coating on flexible substrates. To achieve conformal coating on substrate, formic acid as a cosolvent was added to aqueous ink solution to reduce surface tension of the solution. Due to improved coating quality of HfO2 thin film, the fabricated HfO2 gate dielectric shows reliable breakdown characteristics and low leakage current.

Original languageEnglish
Article number080310
JournalJapanese Journal of Applied Physics
Volume55
Issue number8
DOIs
Publication statusPublished - 2016 Aug 1

Fingerprint

inks
Ink
Surface tension
interfacial tension
Thin films
thin films
coatings
Coatings
Temperature
formic acid
Gate dielectrics
Formic acid
Substrates
leakage
Leakage currents
breakdown
aqueous solutions
annealing
Annealing
temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Han, Sun Woong ; Lee, Keun Ho ; Yoo, Young Bum ; Park, Jee Ho ; Song, Kie Moon ; Baik, Hong Koo. / Surface-tension-tailored aqueous ink for low-temperature deposition of high-k HfO2 thin film. In: Japanese Journal of Applied Physics. 2016 ; Vol. 55, No. 8.
@article{eac63a5fa92040dbac98cb2f4618662b,
title = "Surface-tension-tailored aqueous ink for low-temperature deposition of high-k HfO2 thin film",
abstract = "In this paper, solution-based deposition of HfO2 thin film at low temperature was demonstrated. By using aqueous HfCl4 solution, the precursor was effectively decomposed with low annealing temperature of 150 °C. Thus it is preferable to use this solution for dielectric coating on flexible substrates. To achieve conformal coating on substrate, formic acid as a cosolvent was added to aqueous ink solution to reduce surface tension of the solution. Due to improved coating quality of HfO2 thin film, the fabricated HfO2 gate dielectric shows reliable breakdown characteristics and low leakage current.",
author = "Han, {Sun Woong} and Lee, {Keun Ho} and Yoo, {Young Bum} and Park, {Jee Ho} and Song, {Kie Moon} and Baik, {Hong Koo}",
year = "2016",
month = "8",
day = "1",
doi = "10.7567/JJAP.55.080310",
language = "English",
volume = "55",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "8",

}

Surface-tension-tailored aqueous ink for low-temperature deposition of high-k HfO2 thin film. / Han, Sun Woong; Lee, Keun Ho; Yoo, Young Bum; Park, Jee Ho; Song, Kie Moon; Baik, Hong Koo.

In: Japanese Journal of Applied Physics, Vol. 55, No. 8, 080310, 01.08.2016.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Surface-tension-tailored aqueous ink for low-temperature deposition of high-k HfO2 thin film

AU - Han, Sun Woong

AU - Lee, Keun Ho

AU - Yoo, Young Bum

AU - Park, Jee Ho

AU - Song, Kie Moon

AU - Baik, Hong Koo

PY - 2016/8/1

Y1 - 2016/8/1

N2 - In this paper, solution-based deposition of HfO2 thin film at low temperature was demonstrated. By using aqueous HfCl4 solution, the precursor was effectively decomposed with low annealing temperature of 150 °C. Thus it is preferable to use this solution for dielectric coating on flexible substrates. To achieve conformal coating on substrate, formic acid as a cosolvent was added to aqueous ink solution to reduce surface tension of the solution. Due to improved coating quality of HfO2 thin film, the fabricated HfO2 gate dielectric shows reliable breakdown characteristics and low leakage current.

AB - In this paper, solution-based deposition of HfO2 thin film at low temperature was demonstrated. By using aqueous HfCl4 solution, the precursor was effectively decomposed with low annealing temperature of 150 °C. Thus it is preferable to use this solution for dielectric coating on flexible substrates. To achieve conformal coating on substrate, formic acid as a cosolvent was added to aqueous ink solution to reduce surface tension of the solution. Due to improved coating quality of HfO2 thin film, the fabricated HfO2 gate dielectric shows reliable breakdown characteristics and low leakage current.

UR - http://www.scopus.com/inward/record.url?scp=84981322886&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84981322886&partnerID=8YFLogxK

U2 - 10.7567/JJAP.55.080310

DO - 10.7567/JJAP.55.080310

M3 - Article

AN - SCOPUS:84981322886

VL - 55

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 8

M1 - 080310

ER -