The polymer residue remaining on chemical-vapor-deposited graphene after its transfer to the substrate and subsequent lithographic patterning tends to cause problems such as decrease in electron mobility, and unwanted doping. In this study, by using a controllable low-energy Ar+ ion beam (9.5 eV), the residue was cleaned perfectly without damaging the graphene surface. Further, a back-gate graphene field-effect transistor fabricated on the Ar+-ion-cleaned graphene surface showed about 4 times higher drain current than that showed by a similar transistor fabricated on pristine graphene. We believe that the technique used in this study can be useful in preventing the problems caused by the residue remaining on the graphene surface and can be applied not only to the processing of next-generation graphene-based electronics but also to other 2D materials-based electronic material processing.
Bibliographical noteFunding Information:
This research was supported by the Ministry of Trade, Industry and Energy (MOTIE; 10049065 ) and Korea Semiconductor Research Consortium (KSRC) support program for the development of future semiconductor devices. This work was also supported by the Industry technology R&D program of MOTIE/KEIT . [ 10050501 , Development of laser assisted hybrid inorganic deposition system for flexible organic device passivation] and Basic Science Research Program through the National Research Foundation of Korea funded by the Ministry of Education ( 2015R1D1A4A01020731 ).
© 2016 The Authors.
All Science Journal Classification (ASJC) codes
- Materials Science(all)