Surface treatment process applicable to next generation graphene-based electronics

Ki Seok Kim; Hyo Ki Hong; Hanearl Jung; Il Kwon Oh; Zonghoon Lee; Hyungjun Kim; Geun Young Yeom; Kyong Nam Kim

doi:10.1016/j.carbon.2016.03.054

Surface treatment process applicable to next generation graphene-based electronics

Ki Seok Kim, Hyo Ki Hong, Hanearl Jung, Il Kwon Oh, Zonghoon Lee, Hyungjun Kim, Geun Young Yeom, Kyong Nam Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

The polymer residue remaining on chemical-vapor-deposited graphene after its transfer to the substrate and subsequent lithographic patterning tends to cause problems such as decrease in electron mobility, and unwanted doping. In this study, by using a controllable low-energy Ar⁺ ion beam (9.5 eV), the residue was cleaned perfectly without damaging the graphene surface. Further, a back-gate graphene field-effect transistor fabricated on the Ar⁺-ion-cleaned graphene surface showed about 4 times higher drain current than that showed by a similar transistor fabricated on pristine graphene. We believe that the technique used in this study can be useful in preventing the problems caused by the residue remaining on the graphene surface and can be applied not only to the processing of next-generation graphene-based electronics but also to other 2D materials-based electronic material processing.

Original language	English
Pages (from-to)	119-124
Number of pages	6
Journal	Carbon
Volume	104
DOIs	https://doi.org/10.1016/j.carbon.2016.03.054
Publication status	Published - 2016 Aug

Bibliographical note

Funding Information:
This research was supported by the Ministry of Trade, Industry and Energy (MOTIE; 10049065 ) and Korea Semiconductor Research Consortium (KSRC) support program for the development of future semiconductor devices. This work was also supported by the Industry technology R&D program of MOTIE/KEIT . [ 10050501 , Development of laser assisted hybrid inorganic deposition system for flexible organic device passivation] and Basic Science Research Program through the National Research Foundation of Korea funded by the Ministry of Education ( 2015R1D1A4A01020731 ).

Publisher Copyright:
© 2016 The Authors.

All Science Journal Classification (ASJC) codes

Chemistry(all)
Materials Science(all)

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title = "Surface treatment process applicable to next generation graphene-based electronics",

abstract = "The polymer residue remaining on chemical-vapor-deposited graphene after its transfer to the substrate and subsequent lithographic patterning tends to cause problems such as decrease in electron mobility, and unwanted doping. In this study, by using a controllable low-energy Ar+ ion beam (9.5 eV), the residue was cleaned perfectly without damaging the graphene surface. Further, a back-gate graphene field-effect transistor fabricated on the Ar+-ion-cleaned graphene surface showed about 4 times higher drain current than that showed by a similar transistor fabricated on pristine graphene. We believe that the technique used in this study can be useful in preventing the problems caused by the residue remaining on the graphene surface and can be applied not only to the processing of next-generation graphene-based electronics but also to other 2D materials-based electronic material processing.",

author = "Kim, {Ki Seok} and Hong, {Hyo Ki} and Hanearl Jung and Oh, {Il Kwon} and Zonghoon Lee and Hyungjun Kim and Yeom, {Geun Young} and Kim, {Kyong Nam}",

note = "Funding Information: This research was supported by the Ministry of Trade, Industry and Energy (MOTIE; 10049065 ) and Korea Semiconductor Research Consortium (KSRC) support program for the development of future semiconductor devices. This work was also supported by the Industry technology R&D program of MOTIE/KEIT . [ 10050501 , Development of laser assisted hybrid inorganic deposition system for flexible organic device passivation] and Basic Science Research Program through the National Research Foundation of Korea funded by the Ministry of Education ( 2015R1D1A4A01020731 ). Publisher Copyright: {\textcopyright} 2016 The Authors.",

year = "2016",

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doi = "10.1016/j.carbon.2016.03.054",

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AU - Kim, Ki Seok

AU - Hong, Hyo Ki

AU - Jung, Hanearl

AU - Oh, Il Kwon

AU - Lee, Zonghoon

AU - Kim, Hyungjun

AU - Yeom, Geun Young

AU - Kim, Kyong Nam

N1 - Funding Information: This research was supported by the Ministry of Trade, Industry and Energy (MOTIE; 10049065 ) and Korea Semiconductor Research Consortium (KSRC) support program for the development of future semiconductor devices. This work was also supported by the Industry technology R&D program of MOTIE/KEIT . [ 10050501 , Development of laser assisted hybrid inorganic deposition system for flexible organic device passivation] and Basic Science Research Program through the National Research Foundation of Korea funded by the Ministry of Education ( 2015R1D1A4A01020731 ). Publisher Copyright: © 2016 The Authors.

PY - 2016/8

Y1 - 2016/8

N2 - The polymer residue remaining on chemical-vapor-deposited graphene after its transfer to the substrate and subsequent lithographic patterning tends to cause problems such as decrease in electron mobility, and unwanted doping. In this study, by using a controllable low-energy Ar+ ion beam (9.5 eV), the residue was cleaned perfectly without damaging the graphene surface. Further, a back-gate graphene field-effect transistor fabricated on the Ar+-ion-cleaned graphene surface showed about 4 times higher drain current than that showed by a similar transistor fabricated on pristine graphene. We believe that the technique used in this study can be useful in preventing the problems caused by the residue remaining on the graphene surface and can be applied not only to the processing of next-generation graphene-based electronics but also to other 2D materials-based electronic material processing.

AB - The polymer residue remaining on chemical-vapor-deposited graphene after its transfer to the substrate and subsequent lithographic patterning tends to cause problems such as decrease in electron mobility, and unwanted doping. In this study, by using a controllable low-energy Ar+ ion beam (9.5 eV), the residue was cleaned perfectly without damaging the graphene surface. Further, a back-gate graphene field-effect transistor fabricated on the Ar+-ion-cleaned graphene surface showed about 4 times higher drain current than that showed by a similar transistor fabricated on pristine graphene. We believe that the technique used in this study can be useful in preventing the problems caused by the residue remaining on the graphene surface and can be applied not only to the processing of next-generation graphene-based electronics but also to other 2D materials-based electronic material processing.

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Surface treatment process applicable to next generation graphene-based electronics

Abstract

Bibliographical note

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