Surface treatment process applicable to next generation graphene-based electronics

Ki Seok Kim, Hyo Ki Hong, Hanearl Jung, Il Kwon Oh, Zonghoon Lee, Hyungjun Kim, Geun Young Yeom, Kyong Nam Kim

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The polymer residue remaining on chemical-vapor-deposited graphene after its transfer to the substrate and subsequent lithographic patterning tends to cause problems such as decrease in electron mobility, and unwanted doping. In this study, by using a controllable low-energy Ar+ ion beam (9.5 eV), the residue was cleaned perfectly without damaging the graphene surface. Further, a back-gate graphene field-effect transistor fabricated on the Ar+-ion-cleaned graphene surface showed about 4 times higher drain current than that showed by a similar transistor fabricated on pristine graphene. We believe that the technique used in this study can be useful in preventing the problems caused by the residue remaining on the graphene surface and can be applied not only to the processing of next-generation graphene-based electronics but also to other 2D materials-based electronic material processing.

Original languageEnglish
Pages (from-to)119-124
Number of pages6
JournalCarbon
Volume104
DOIs
Publication statusPublished - 2016 Aug

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)

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    Kim, K. S., Hong, H. K., Jung, H., Oh, I. K., Lee, Z., Kim, H., Yeom, G. Y., & Kim, K. N. (2016). Surface treatment process applicable to next generation graphene-based electronics. Carbon, 104, 119-124. https://doi.org/10.1016/j.carbon.2016.03.054