Suspended GaN nanowires as NO2 sensor for high temperature applications

Jaesam Sim, Kwanoh Kim, Soonho Song, Jongbaeg Kim

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

We propose a gas sensor operable over a wide temperature range and using suspended GaN nanowires functionalized with Pt-Pd. The sensor is batch-fabricated by directly integrating the GaN nanowires onto batch-processed silicon microelectrodes in parallel. The high thermal stability of the sensor originates from a large band gap of GaN nanowires that enables the detection of NO2 gas at an elevated temperature of up to 350 C without a decrease in responsiveness. Exposed to NO2 at 100- 1000 ppm at 350 C, the sensor shows a linear increment in relative response with respect to the change in gas concentration. The sensor results in a two- to four-fold increase in responsiveness to NO2 at 100 ppm compared to NH3 at 100 ppm and CO2 at 1000 ppm. The nanowires suspended over a substrate provide increased surface area that could interact with gas molecules for enhanced responsiveness, and prevent any unnecessary interactions between the nanowires and the substrate.

Original languageEnglish
Pages (from-to)2432-2437
Number of pages6
JournalAnalyst
Volume138
Issue number8
DOIs
Publication statusPublished - 2013 Apr 21

All Science Journal Classification (ASJC) codes

  • Analytical Chemistry
  • Biochemistry
  • Environmental Chemistry
  • Spectroscopy
  • Electrochemistry

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