Abstract
We propose three methods to enhance switching characteristics of p-type Cu2O thin film transistors (TFTs) by passivating the copper oxide TFTs with silicon dioxide (SiO2) using sputtering, oxidizing the back channel of copper oxide with hypochlorous acid (HClO), and doping gallium into the Cu2O film.
| Original language | English |
|---|---|
| Title of host publication | 26th International Display Workshops, IDW 2019 |
| Publisher | International Display Workshops |
| Pages | 451-454 |
| Number of pages | 4 |
| ISBN (Electronic) | 9781713806301 |
| Publication status | Published - 2019 |
| Event | 26th International Display Workshops, IDW 2019 - Sapporo, Japan Duration: 2019 Nov 27 → 2019 Nov 29 |
Publication series
| Name | Proceedings of the International Display Workshops |
|---|---|
| Volume | 2 |
| ISSN (Print) | 1883-2490 |
Conference
| Conference | 26th International Display Workshops, IDW 2019 |
|---|---|
| Country/Territory | Japan |
| City | Sapporo |
| Period | 19/11/27 → 19/11/29 |
Bibliographical note
Funding Information:This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (No. 2017R1A2B3008719).
Publisher Copyright:
© 2019 ITE and SID.
All Science Journal Classification (ASJC) codes
- Computer Vision and Pattern Recognition
- Human-Computer Interaction
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials