Switching characteristic enhancement of p-type Cu2O TFTs

Dongwoo Kim, I. Sak Lee, Sujin Jung, Sung Min Rho, Hyun Jae Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution


We propose three methods to enhance switching characteristics of p-type Cu2O thin film transistors (TFTs) by passivating the copper oxide TFTs with silicon dioxide (SiO2) using sputtering, oxidizing the back channel of copper oxide with hypochlorous acid (HClO), and doping gallium into the Cu2O film.

Original languageEnglish
Title of host publication26th International Display Workshops, IDW 2019
PublisherInternational Display Workshops
Number of pages4
ISBN (Electronic)9781713806301
Publication statusPublished - 2019
Event26th International Display Workshops, IDW 2019 - Sapporo, Japan
Duration: 2019 Nov 272019 Nov 29

Publication series

NameProceedings of the International Display Workshops
ISSN (Print)1883-2490


Conference26th International Display Workshops, IDW 2019

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (No. 2017R1A2B3008719).

Publisher Copyright:
© 2019 ITE and SID.

All Science Journal Classification (ASJC) codes

  • Computer Vision and Pattern Recognition
  • Human-Computer Interaction
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials


Dive into the research topics of 'Switching characteristic enhancement of p-type Cu2O TFTs'. Together they form a unique fingerprint.

Cite this