Switching pMOS sense amplifier for high-density low-voltage single-ended SRAM

Hanwool Jeong, Taewon Kim, Kyoman Kang, Taejoong Song, Gyuhong Kim, Hyo Sig Won, Seong Ook Jung

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


A switching pMOS sense amplifier (SPSA) is proposed for high-speed single-ended static RAM sensing. By using the same pull-up pMOS transistor for sensing and precharging the bit-line, the performance is enhanced, and the power consumption is reduced. A keeper that compensates bit-line leakage is also employed, and a minimum operating voltage of 0.51 V is obtained. Compared to the previous dynamic pMOS sense amplifier and AC-coupled sense amplifier (ACSA), the sensing time is improved by 55% and 10%, respectively, and the power consumption is reduced by 12% and 44%, respectively. Furthermore, the area of the SPSA is estimated to be 43% smaller than that of the ACSA. Although the SPSA has a 59% larger area than a dynamic pMOS sense amplifier, the area overhead can be mitigated by allocating a larger number of cells per bit-line (CpBL) because the performance of the SPSA is still better than that of the dynamic pMOS, even with a CpBL that is two times larger.

Original languageEnglish
Article number7112585
Pages (from-to)1555-1563
Number of pages9
JournalIEEE Transactions on Circuits and Systems I: Regular Papers
Issue number6
Publication statusPublished - 2015 Jun 1

Bibliographical note

Publisher Copyright:
© 2004-2012 IEEE.

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering


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