Switching pMOS sense amplifier for high-density low-voltage single-ended SRAM

Hanwool Jeong, Taewon Kim, Kyoman Kang, Taejoong Song, Gyuhong Kim, Hyo Sig Won, Seongook Jung

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

A switching pMOS sense amplifier (SPSA) is proposed for high-speed single-ended static RAM sensing. By using the same pull-up pMOS transistor for sensing and precharging the bit-line, the performance is enhanced, and the power consumption is reduced. A keeper that compensates bit-line leakage is also employed, and a minimum operating voltage of 0.51 V is obtained. Compared to the previous dynamic pMOS sense amplifier and AC-coupled sense amplifier (ACSA), the sensing time is improved by 55% and 10%, respectively, and the power consumption is reduced by 12% and 44%, respectively. Furthermore, the area of the SPSA is estimated to be 43% smaller than that of the ACSA. Although the SPSA has a 59% larger area than a dynamic pMOS sense amplifier, the area overhead can be mitigated by allocating a larger number of cells per bit-line (CpBL) because the performance of the SPSA is still better than that of the dynamic pMOS, even with a CpBL that is two times larger.

Original languageEnglish
Article number7112585
Pages (from-to)1555-1563
Number of pages9
JournalIEEE Transactions on Circuits and Systems I: Regular Papers
Volume62
Issue number6
DOIs
Publication statusPublished - 2015 Jun 1

Fingerprint

Static random access storage
Electric potential
Electric power utilization
Random access storage
Transistors

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Jeong, Hanwool ; Kim, Taewon ; Kang, Kyoman ; Song, Taejoong ; Kim, Gyuhong ; Won, Hyo Sig ; Jung, Seongook. / Switching pMOS sense amplifier for high-density low-voltage single-ended SRAM. In: IEEE Transactions on Circuits and Systems I: Regular Papers. 2015 ; Vol. 62, No. 6. pp. 1555-1563.
@article{3ec0867f26684322aac9c7306997b186,
title = "Switching pMOS sense amplifier for high-density low-voltage single-ended SRAM",
abstract = "A switching pMOS sense amplifier (SPSA) is proposed for high-speed single-ended static RAM sensing. By using the same pull-up pMOS transistor for sensing and precharging the bit-line, the performance is enhanced, and the power consumption is reduced. A keeper that compensates bit-line leakage is also employed, and a minimum operating voltage of 0.51 V is obtained. Compared to the previous dynamic pMOS sense amplifier and AC-coupled sense amplifier (ACSA), the sensing time is improved by 55{\%} and 10{\%}, respectively, and the power consumption is reduced by 12{\%} and 44{\%}, respectively. Furthermore, the area of the SPSA is estimated to be 43{\%} smaller than that of the ACSA. Although the SPSA has a 59{\%} larger area than a dynamic pMOS sense amplifier, the area overhead can be mitigated by allocating a larger number of cells per bit-line (CpBL) because the performance of the SPSA is still better than that of the dynamic pMOS, even with a CpBL that is two times larger.",
author = "Hanwool Jeong and Taewon Kim and Kyoman Kang and Taejoong Song and Gyuhong Kim and Won, {Hyo Sig} and Seongook Jung",
year = "2015",
month = "6",
day = "1",
doi = "10.1109/TCSI.2015.2415171",
language = "English",
volume = "62",
pages = "1555--1563",
journal = "IEEE Transactions on Circuits and Systems II: Express Briefs",
issn = "1549-8328",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "6",

}

Switching pMOS sense amplifier for high-density low-voltage single-ended SRAM. / Jeong, Hanwool; Kim, Taewon; Kang, Kyoman; Song, Taejoong; Kim, Gyuhong; Won, Hyo Sig; Jung, Seongook.

In: IEEE Transactions on Circuits and Systems I: Regular Papers, Vol. 62, No. 6, 7112585, 01.06.2015, p. 1555-1563.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Switching pMOS sense amplifier for high-density low-voltage single-ended SRAM

AU - Jeong, Hanwool

AU - Kim, Taewon

AU - Kang, Kyoman

AU - Song, Taejoong

AU - Kim, Gyuhong

AU - Won, Hyo Sig

AU - Jung, Seongook

PY - 2015/6/1

Y1 - 2015/6/1

N2 - A switching pMOS sense amplifier (SPSA) is proposed for high-speed single-ended static RAM sensing. By using the same pull-up pMOS transistor for sensing and precharging the bit-line, the performance is enhanced, and the power consumption is reduced. A keeper that compensates bit-line leakage is also employed, and a minimum operating voltage of 0.51 V is obtained. Compared to the previous dynamic pMOS sense amplifier and AC-coupled sense amplifier (ACSA), the sensing time is improved by 55% and 10%, respectively, and the power consumption is reduced by 12% and 44%, respectively. Furthermore, the area of the SPSA is estimated to be 43% smaller than that of the ACSA. Although the SPSA has a 59% larger area than a dynamic pMOS sense amplifier, the area overhead can be mitigated by allocating a larger number of cells per bit-line (CpBL) because the performance of the SPSA is still better than that of the dynamic pMOS, even with a CpBL that is two times larger.

AB - A switching pMOS sense amplifier (SPSA) is proposed for high-speed single-ended static RAM sensing. By using the same pull-up pMOS transistor for sensing and precharging the bit-line, the performance is enhanced, and the power consumption is reduced. A keeper that compensates bit-line leakage is also employed, and a minimum operating voltage of 0.51 V is obtained. Compared to the previous dynamic pMOS sense amplifier and AC-coupled sense amplifier (ACSA), the sensing time is improved by 55% and 10%, respectively, and the power consumption is reduced by 12% and 44%, respectively. Furthermore, the area of the SPSA is estimated to be 43% smaller than that of the ACSA. Although the SPSA has a 59% larger area than a dynamic pMOS sense amplifier, the area overhead can be mitigated by allocating a larger number of cells per bit-line (CpBL) because the performance of the SPSA is still better than that of the dynamic pMOS, even with a CpBL that is two times larger.

UR - http://www.scopus.com/inward/record.url?scp=84930958542&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84930958542&partnerID=8YFLogxK

U2 - 10.1109/TCSI.2015.2415171

DO - 10.1109/TCSI.2015.2415171

M3 - Article

AN - SCOPUS:84930958542

VL - 62

SP - 1555

EP - 1563

JO - IEEE Transactions on Circuits and Systems II: Express Briefs

JF - IEEE Transactions on Circuits and Systems II: Express Briefs

SN - 1549-8328

IS - 6

M1 - 7112585

ER -