Synthesis and characterization of ferroelectric properties of Ce2Ti2O7 thin films with Ce3+ by chemical solution deposition

Woo Sik Kim, Jun Kyu Yang, Chang Ki Lee, Hong Sub Lee, Hyung Ho Park

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10 Citations (Scopus)


Ferroelectric Ce2Ti2O7 films were grown with a pseudo-pyrochlore structure on an Y2O3/Si substrate by low-vacuum (6.664 Pa) anneal at 800 °C using chemical solution deposition. Trivalent state of Ce could be confirmed by using X-ray absorption-near-edge-structure. The dielectric constant at 1 MHz and dielectric loss of the film in the Pt/Ce2Ti2O7/Pt structure were measured as 48.7 and 0.013, respectively. A relatively large memory window of 1.24 V was measured with a Pt/Ce2Ti2O7/Y2O3/Si capacitor structure at an applied voltage of 6 V. The capacitance-voltage hysteresis was symmetrical without shift from the origin due to an effective suppression of the interfacial SiO2 formation under low-vacuum annealing conditions. The Ce2Ti2O7 film was compatible for application to a ferroelectric gate.

Original languageEnglish
Pages (from-to)506-509
Number of pages4
JournalThin Solid Films
Issue number2
Publication statusPublished - 2008 Nov 28

Bibliographical note

Funding Information:
This work was supported by the Korea Research Foundation Grant founded by the Korean Government (MOEHRD, Basic Research Promotion Fund) (KRF-2006-311-D00636). The experiments at the PLS were supported in part by the MOST and the POSTECH.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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