Synthesis and characterization of ferroelectric properties of Ce2Ti2O7 thin films with Ce3+ by chemical solution deposition

Woo Sik Kim, Jun Kyu Yang, Chang Ki Lee, Hong Sub Lee, Hyung-Ho Park

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Ferroelectric Ce2Ti2O7 films were grown with a pseudo-pyrochlore structure on an Y2O3/Si substrate by low-vacuum (6.664 Pa) anneal at 800 °C using chemical solution deposition. Trivalent state of Ce could be confirmed by using X-ray absorption-near-edge-structure. The dielectric constant at 1 MHz and dielectric loss of the film in the Pt/Ce2Ti2O7/Pt structure were measured as 48.7 and 0.013, respectively. A relatively large memory window of 1.24 V was measured with a Pt/Ce2Ti2O7/Y2O3/Si capacitor structure at an applied voltage of 6 V. The capacitance-voltage hysteresis was symmetrical without shift from the origin due to an effective suppression of the interfacial SiO2 formation under low-vacuum annealing conditions. The Ce2Ti2O7 film was compatible for application to a ferroelectric gate.

Original languageEnglish
Pages (from-to)506-509
Number of pages4
JournalThin Solid Films
Volume517
Issue number2
DOIs
Publication statusPublished - 2008 Nov 28

Fingerprint

Ferroelectric materials
low vacuum
Vacuum
Ferroelectric films
Thin films
X ray absorption
Electric potential
synthesis
Dielectric losses
thin films
Hysteresis
Capacitors
Permittivity
Capacitance
electric potential
Annealing
dielectric loss
Data storage equipment
capacitors
Substrates

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Kim, Woo Sik ; Yang, Jun Kyu ; Lee, Chang Ki ; Lee, Hong Sub ; Park, Hyung-Ho. / Synthesis and characterization of ferroelectric properties of Ce2Ti2O7 thin films with Ce3+ by chemical solution deposition. In: Thin Solid Films. 2008 ; Vol. 517, No. 2. pp. 506-509.
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Synthesis and characterization of ferroelectric properties of Ce2Ti2O7 thin films with Ce3+ by chemical solution deposition. / Kim, Woo Sik; Yang, Jun Kyu; Lee, Chang Ki; Lee, Hong Sub; Park, Hyung-Ho.

In: Thin Solid Films, Vol. 517, No. 2, 28.11.2008, p. 506-509.

Research output: Contribution to journalArticle

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AU - Kim, Woo Sik

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AB - Ferroelectric Ce2Ti2O7 films were grown with a pseudo-pyrochlore structure on an Y2O3/Si substrate by low-vacuum (6.664 Pa) anneal at 800 °C using chemical solution deposition. Trivalent state of Ce could be confirmed by using X-ray absorption-near-edge-structure. The dielectric constant at 1 MHz and dielectric loss of the film in the Pt/Ce2Ti2O7/Pt structure were measured as 48.7 and 0.013, respectively. A relatively large memory window of 1.24 V was measured with a Pt/Ce2Ti2O7/Y2O3/Si capacitor structure at an applied voltage of 6 V. The capacitance-voltage hysteresis was symmetrical without shift from the origin due to an effective suppression of the interfacial SiO2 formation under low-vacuum annealing conditions. The Ce2Ti2O7 film was compatible for application to a ferroelectric gate.

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