Synthesis of arsenic-doped p-type ZnO films by addition of As 2O3 to the ZnO spin coating solution

Chanhyoung Park, Solbaro Kim, Sangwoo Lim

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Arsenic-doped ZnO films were prepared by adding As2O3 to sol-gel ZnO spin coating synthesis. The preferential (002) orientation improved, and the grain size of ZnO lattice increased with As-doping in ZnO films. UV transmittance over 70% with a blue shift was observed after As-doping. In particular, ZnO film with an As concentration of 6.7 at% showed a carrier concentration of 1.62 x 1019/cm3, mobility of 94.0 cm 2/Vs, and resistivity of 3.99 × 10-3 Ω cm. It was suggested that formation of As-2VZn increased the carrier concentration and induced the blue shift, and the increase in grain size increased the mobility of p-type ZnO films.

Original languageEnglish
Pages (from-to)18-22
Number of pages5
JournalSolid State Communications
Volume167
DOIs
Publication statusPublished - 2013 Jan 1

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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