Synthesis of arsenic-doped p-type ZnO films by addition of As 2O3 to the ZnO spin coating solution

Chanhyoung Park, Solbaro Kim, Sangwoo Lim

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Arsenic-doped ZnO films were prepared by adding As2O3 to sol-gel ZnO spin coating synthesis. The preferential (002) orientation improved, and the grain size of ZnO lattice increased with As-doping in ZnO films. UV transmittance over 70% with a blue shift was observed after As-doping. In particular, ZnO film with an As concentration of 6.7 at% showed a carrier concentration of 1.62 x 1019/cm3, mobility of 94.0 cm 2/Vs, and resistivity of 3.99 × 10-3 Ω cm. It was suggested that formation of As-2VZn increased the carrier concentration and induced the blue shift, and the increase in grain size increased the mobility of p-type ZnO films.

Original languageEnglish
Pages (from-to)18-22
Number of pages5
JournalSolid State Communications
Volume167
DOIs
Publication statusPublished - 2013 Jan 1

Fingerprint

Spin coating
Arsenic
arsenic
coating
synthesis
blue shift
Carrier concentration
grain size
Doping (additives)
Sol-gels
transmittance
gels
electrical resistivity

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

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title = "Synthesis of arsenic-doped p-type ZnO films by addition of As 2O3 to the ZnO spin coating solution",
abstract = "Arsenic-doped ZnO films were prepared by adding As2O3 to sol-gel ZnO spin coating synthesis. The preferential (002) orientation improved, and the grain size of ZnO lattice increased with As-doping in ZnO films. UV transmittance over 70{\%} with a blue shift was observed after As-doping. In particular, ZnO film with an As concentration of 6.7 at{\%} showed a carrier concentration of 1.62 x 1019/cm3, mobility of 94.0 cm 2/Vs, and resistivity of 3.99 × 10-3 Ω cm. It was suggested that formation of As-2VZn increased the carrier concentration and induced the blue shift, and the increase in grain size increased the mobility of p-type ZnO films.",
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Synthesis of arsenic-doped p-type ZnO films by addition of As 2O3 to the ZnO spin coating solution. / Park, Chanhyoung; Kim, Solbaro; Lim, Sangwoo.

In: Solid State Communications, Vol. 167, 01.01.2013, p. 18-22.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Synthesis of arsenic-doped p-type ZnO films by addition of As 2O3 to the ZnO spin coating solution

AU - Park, Chanhyoung

AU - Kim, Solbaro

AU - Lim, Sangwoo

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AB - Arsenic-doped ZnO films were prepared by adding As2O3 to sol-gel ZnO spin coating synthesis. The preferential (002) orientation improved, and the grain size of ZnO lattice increased with As-doping in ZnO films. UV transmittance over 70% with a blue shift was observed after As-doping. In particular, ZnO film with an As concentration of 6.7 at% showed a carrier concentration of 1.62 x 1019/cm3, mobility of 94.0 cm 2/Vs, and resistivity of 3.99 × 10-3 Ω cm. It was suggested that formation of As-2VZn increased the carrier concentration and induced the blue shift, and the increase in grain size increased the mobility of p-type ZnO films.

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