Synthesis of Atomically Thin Transition Metal Ditelluride Films by Rapid Chemical Transformation in Solution Phase

Anupam Giri, Heeseung Yang, Woosun Jang, Junghyeok Kwak, Kaliannan Thiyagarajan, Monalisa Pal, Donghyun Lee, Ranbir Singh, Chulhong Kim, Kilwon Cho, Aloysius Soon, Unyong Jeong

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The controlled synthesis of large-area, atomically thin molybdenum and tungsten ditelluride (MoTe2 and WTe2) crystals is crucial for their emerging applications based on the attractive electronic properties. However, the solution phase synthesis of high-quality and large-area MoTe2 or WTe2 ultrathin films have not been achieved yet. In this study, we synthesized for the first time, large-area atomically thin MoTe2 and WTe2 films in solution phase, through rapid crystal formation directly on a conducting substrate. For the synthesis, we developed a new Te precursor. The crystal growth involves an in situ chemical transformation from Te nanoparticles into MoTe2 or WTe2 thin films. The synthesis enables precise control of the number of atomic layers over a large area, from a monolayer to multilayers. Micropatterned MoTe2 thin films are also readily synthesized in situ using the same process. The photodetector made of 3-layer semiconducting MoTe2 thin films exhibits high photoresponsivity (Rλ) over a broad spectral range (300-1100 nm) with a maximum in the near-IR region, including a Rλ = 30 mA W-1 even at λ = 1.10 μm and a fast photoresponse (87 μs). Our synthesis method presents a crucial step in the solution phase synthesis of metal telluride ultrathin films and paves the way for their large-scale emerging applications.

Original languageEnglish
Pages (from-to)2463-2473
Number of pages11
JournalChemistry of Materials
Volume30
Issue number7
DOIs
Publication statusPublished - 2018 Apr 10

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Transition metals
Ultrathin films
Thin films
Semiconducting films
Crystals
Tungsten
Molybdenum
Photodetectors
Crystallization
Crystal growth
Electronic properties
Monolayers
Multilayers
Metals
Nanoparticles
Substrates

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Chemical Engineering(all)
  • Materials Chemistry

Cite this

Giri, Anupam ; Yang, Heeseung ; Jang, Woosun ; Kwak, Junghyeok ; Thiyagarajan, Kaliannan ; Pal, Monalisa ; Lee, Donghyun ; Singh, Ranbir ; Kim, Chulhong ; Cho, Kilwon ; Soon, Aloysius ; Jeong, Unyong. / Synthesis of Atomically Thin Transition Metal Ditelluride Films by Rapid Chemical Transformation in Solution Phase. In: Chemistry of Materials. 2018 ; Vol. 30, No. 7. pp. 2463-2473.
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Giri, A, Yang, H, Jang, W, Kwak, J, Thiyagarajan, K, Pal, M, Lee, D, Singh, R, Kim, C, Cho, K, Soon, A & Jeong, U 2018, 'Synthesis of Atomically Thin Transition Metal Ditelluride Films by Rapid Chemical Transformation in Solution Phase', Chemistry of Materials, vol. 30, no. 7, pp. 2463-2473. https://doi.org/10.1021/acs.chemmater.8b00684

Synthesis of Atomically Thin Transition Metal Ditelluride Films by Rapid Chemical Transformation in Solution Phase. / Giri, Anupam; Yang, Heeseung; Jang, Woosun; Kwak, Junghyeok; Thiyagarajan, Kaliannan; Pal, Monalisa; Lee, Donghyun; Singh, Ranbir; Kim, Chulhong; Cho, Kilwon; Soon, Aloysius; Jeong, Unyong.

In: Chemistry of Materials, Vol. 30, No. 7, 10.04.2018, p. 2463-2473.

Research output: Contribution to journalArticle

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T1 - Synthesis of Atomically Thin Transition Metal Ditelluride Films by Rapid Chemical Transformation in Solution Phase

AU - Giri, Anupam

AU - Yang, Heeseung

AU - Jang, Woosun

AU - Kwak, Junghyeok

AU - Thiyagarajan, Kaliannan

AU - Pal, Monalisa

AU - Lee, Donghyun

AU - Singh, Ranbir

AU - Kim, Chulhong

AU - Cho, Kilwon

AU - Soon, Aloysius

AU - Jeong, Unyong

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Y1 - 2018/4/10

N2 - The controlled synthesis of large-area, atomically thin molybdenum and tungsten ditelluride (MoTe2 and WTe2) crystals is crucial for their emerging applications based on the attractive electronic properties. However, the solution phase synthesis of high-quality and large-area MoTe2 or WTe2 ultrathin films have not been achieved yet. In this study, we synthesized for the first time, large-area atomically thin MoTe2 and WTe2 films in solution phase, through rapid crystal formation directly on a conducting substrate. For the synthesis, we developed a new Te precursor. The crystal growth involves an in situ chemical transformation from Te nanoparticles into MoTe2 or WTe2 thin films. The synthesis enables precise control of the number of atomic layers over a large area, from a monolayer to multilayers. Micropatterned MoTe2 thin films are also readily synthesized in situ using the same process. The photodetector made of 3-layer semiconducting MoTe2 thin films exhibits high photoresponsivity (Rλ) over a broad spectral range (300-1100 nm) with a maximum in the near-IR region, including a Rλ = 30 mA W-1 even at λ = 1.10 μm and a fast photoresponse (87 μs). Our synthesis method presents a crucial step in the solution phase synthesis of metal telluride ultrathin films and paves the way for their large-scale emerging applications.

AB - The controlled synthesis of large-area, atomically thin molybdenum and tungsten ditelluride (MoTe2 and WTe2) crystals is crucial for their emerging applications based on the attractive electronic properties. However, the solution phase synthesis of high-quality and large-area MoTe2 or WTe2 ultrathin films have not been achieved yet. In this study, we synthesized for the first time, large-area atomically thin MoTe2 and WTe2 films in solution phase, through rapid crystal formation directly on a conducting substrate. For the synthesis, we developed a new Te precursor. The crystal growth involves an in situ chemical transformation from Te nanoparticles into MoTe2 or WTe2 thin films. The synthesis enables precise control of the number of atomic layers over a large area, from a monolayer to multilayers. Micropatterned MoTe2 thin films are also readily synthesized in situ using the same process. The photodetector made of 3-layer semiconducting MoTe2 thin films exhibits high photoresponsivity (Rλ) over a broad spectral range (300-1100 nm) with a maximum in the near-IR region, including a Rλ = 30 mA W-1 even at λ = 1.10 μm and a fast photoresponse (87 μs). Our synthesis method presents a crucial step in the solution phase synthesis of metal telluride ultrathin films and paves the way for their large-scale emerging applications.

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