Synthesis of horizontally aligned ZnO nanowires localized at terrace edges and application for high sensitivity gas sensor

J. Y. Son; S. J. Lim; J. H. Cho; W. K. Seong; Hyungjun Kim

doi:10.1063/1.2967871

Synthesis of horizontally aligned ZnO nanowires localized at terrace edges and application for high sensitivity gas sensor

J. Y. Son, S. J. Lim, J. H. Cho, W. K. Seong, Hyungjun Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

75 Citations (Scopus)

Abstract

We developed step edge decoration method for the fabrication of semiconductor ZnO nanodots and nanowires using pulsed laser deposition. We synthesized high quality ZnO nanowires with the small diameter of about 20 nm and the uniform interval of about 80 nm between each nanowire, which has a simple structure for the formation of contact electrodes. The ZnO nanowire-based sensor was prepared only with the simple process of a gold electrode formation. The ZnO nanowire-based sensor exhibited the high surface-to-volume ratio of 58.6 μ m-1 and the significantly high sensitivity of about 10 even for the low ethanol concentration of 0.2 ppm.

Original language	English
Article number	053109
Journal	Applied Physics Letters
Volume	93
Issue number	5
DOIs	https://doi.org/10.1063/1.2967871
Publication status	Published - 2008

Bibliographical note

Funding Information:
This work was supported by Korea Research Foundation (Grant Nos. KRF-2007-001-C0111, KRF-2007-331-D00243, KRF-2007-314-C00111, and MOEHRD, KRF-2005-005-J13102), Korea Science and Engineering Foundation (KOSEF) (Grant Nos. R01-2007-000-20143-0 and 2007-02864), Infra Technology Development for Electronic Parts, POSTECH Core Research Program, and Brain Korea 21 Project 2008. J.H.C. was supported by the Korea Research Foundation Grant KRF-2006-005-J02801.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.2967871

Fingerprint Dive into the research topics of 'Synthesis of horizontally aligned ZnO nanowires localized at terrace edges and application for high sensitivity gas sensor'. Together they form a unique fingerprint.

Cite this

@article{11fbae00a8084b8fb00dc2473a2718bf,

title = "Synthesis of horizontally aligned ZnO nanowires localized at terrace edges and application for high sensitivity gas sensor",

abstract = "We developed step edge decoration method for the fabrication of semiconductor ZnO nanodots and nanowires using pulsed laser deposition. We synthesized high quality ZnO nanowires with the small diameter of about 20 nm and the uniform interval of about 80 nm between each nanowire, which has a simple structure for the formation of contact electrodes. The ZnO nanowire-based sensor was prepared only with the simple process of a gold electrode formation. The ZnO nanowire-based sensor exhibited the high surface-to-volume ratio of 58.6 μ m-1 and the significantly high sensitivity of about 10 even for the low ethanol concentration of 0.2 ppm.",

author = "Son, {J. Y.} and Lim, {S. J.} and Cho, {J. H.} and Seong, {W. K.} and Hyungjun Kim",

note = "Funding Information: This work was supported by Korea Research Foundation (Grant Nos. KRF-2007-001-C0111, KRF-2007-331-D00243, KRF-2007-314-C00111, and MOEHRD, KRF-2005-005-J13102), Korea Science and Engineering Foundation (KOSEF) (Grant Nos. R01-2007-000-20143-0 and 2007-02864), Infra Technology Development for Electronic Parts, POSTECH Core Research Program, and Brain Korea 21 Project 2008. J.H.C. was supported by the Korea Research Foundation Grant KRF-2006-005-J02801. ",

year = "2008",

doi = "10.1063/1.2967871",

language = "English",

volume = "93",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "5",

}

TY - JOUR

T1 - Synthesis of horizontally aligned ZnO nanowires localized at terrace edges and application for high sensitivity gas sensor

AU - Son, J. Y.

AU - Lim, S. J.

AU - Cho, J. H.

AU - Seong, W. K.

AU - Kim, Hyungjun

N1 - Funding Information: This work was supported by Korea Research Foundation (Grant Nos. KRF-2007-001-C0111, KRF-2007-331-D00243, KRF-2007-314-C00111, and MOEHRD, KRF-2005-005-J13102), Korea Science and Engineering Foundation (KOSEF) (Grant Nos. R01-2007-000-20143-0 and 2007-02864), Infra Technology Development for Electronic Parts, POSTECH Core Research Program, and Brain Korea 21 Project 2008. J.H.C. was supported by the Korea Research Foundation Grant KRF-2006-005-J02801.

PY - 2008

Y1 - 2008

N2 - We developed step edge decoration method for the fabrication of semiconductor ZnO nanodots and nanowires using pulsed laser deposition. We synthesized high quality ZnO nanowires with the small diameter of about 20 nm and the uniform interval of about 80 nm between each nanowire, which has a simple structure for the formation of contact electrodes. The ZnO nanowire-based sensor was prepared only with the simple process of a gold electrode formation. The ZnO nanowire-based sensor exhibited the high surface-to-volume ratio of 58.6 μ m-1 and the significantly high sensitivity of about 10 even for the low ethanol concentration of 0.2 ppm.

AB - We developed step edge decoration method for the fabrication of semiconductor ZnO nanodots and nanowires using pulsed laser deposition. We synthesized high quality ZnO nanowires with the small diameter of about 20 nm and the uniform interval of about 80 nm between each nanowire, which has a simple structure for the formation of contact electrodes. The ZnO nanowire-based sensor was prepared only with the simple process of a gold electrode formation. The ZnO nanowire-based sensor exhibited the high surface-to-volume ratio of 58.6 μ m-1 and the significantly high sensitivity of about 10 even for the low ethanol concentration of 0.2 ppm.

UR - http://www.scopus.com/inward/record.url?scp=51849159993&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=51849159993&partnerID=8YFLogxK

U2 - 10.1063/1.2967871

DO - 10.1063/1.2967871

M3 - Article

AN - SCOPUS:51849159993

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 5

M1 - 053109

ER -

Synthesis of horizontally aligned ZnO nanowires localized at terrace edges and application for high sensitivity gas sensor

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Cite this