Synthesis of horizontally aligned ZnO nanowires localized at terrace edges and application for high sensitivity gas sensor

J. Y. Son, S. J. Lim, J. H. Cho, W. K. Seong, Hyungjun Kim

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Abstract

We developed step edge decoration method for the fabrication of semiconductor ZnO nanodots and nanowires using pulsed laser deposition. We synthesized high quality ZnO nanowires with the small diameter of about 20 nm and the uniform interval of about 80 nm between each nanowire, which has a simple structure for the formation of contact electrodes. The ZnO nanowire-based sensor was prepared only with the simple process of a gold electrode formation. The ZnO nanowire-based sensor exhibited the high surface-to-volume ratio of 58.6 μ m-1 and the significantly high sensitivity of about 10 even for the low ethanol concentration of 0.2 ppm.

Original languageEnglish
Article number053109
JournalApplied Physics Letters
Volume93
Issue number5
DOIs
Publication statusPublished - 2008

Bibliographical note

Funding Information:
This work was supported by Korea Research Foundation (Grant Nos. KRF-2007-001-C0111, KRF-2007-331-D00243, KRF-2007-314-C00111, and MOEHRD, KRF-2005-005-J13102), Korea Science and Engineering Foundation (KOSEF) (Grant Nos. R01-2007-000-20143-0 and 2007-02864), Infra Technology Development for Electronic Parts, POSTECH Core Research Program, and Brain Korea 21 Project 2008. J.H.C. was supported by the Korea Research Foundation Grant KRF-2006-005-J02801.

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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