A new ambient drying process that is simple, effective, and reproducible has been developed to synthesize low-k SiO2 aerogel thin films for intermetal dielectric (IMD) materials. The SiO2 aerogel films having a thickness of 9500 angstroms, a high porosity of 79.5%, and a low dielectric constant of 2.0 were obtained by a new ambient drying process using n-heptane as a drying solvent.
|Number of pages||3|
|Journal||Journal of the American Ceramic Society|
|Publication status||Published - 2001|
All Science Journal Classification (ASJC) codes
- Ceramics and Composites
- Materials Chemistry