Synthesis of low-dielectric silica aerogel films by ambient drying

Gun S. Kim, Sang H. Hyun, Hyung H. Park

Research output: Contribution to journal › Article

47 Citations (Scopus)

Abstract

A new ambient drying process that is simple, effective, and reproducible has been developed to synthesize low-k SiO2 aerogel thin films for intermetal dielectric (IMD) materials. The SiO2 aerogel films having a thickness of 9500 angstroms, a high porosity of 79.5%, and a low dielectric constant of 2.0 were obtained by a new ambient drying process using n-heptane as a drying solvent.

Original languageEnglish
Pages (from-to)453-455
Number of pages3
JournalJournal of the American Ceramic Society
Volume84
Issue number2
Publication statusPublished - 2001 Feb 1

Fingerprint

Aerogels
Silicon Dioxide
Drying
silica
Silica
Heptane
Permittivity
Porosity
porosity
Thin films
drying

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Geology
  • Geochemistry and Petrology
  • Materials Chemistry

Cite this

Kim, Gun S. ; Hyun, Sang H. ; Park, Hyung H. / Synthesis of low-dielectric silica aerogel films by ambient drying. In: Journal of the American Ceramic Society. 2001 ; Vol. 84, No. 2. pp. 453-455.
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Kim, GS, Hyun, SH & Park, HH 2001, 'Synthesis of low-dielectric silica aerogel films by ambient drying', Journal of the American Ceramic Society, vol. 84, no. 2, pp. 453-455.

Synthesis of low-dielectric silica aerogel films by ambient drying. / Kim, Gun S.; Hyun, Sang H.; Park, Hyung H.

In: Journal of the American Ceramic Society, Vol. 84, No. 2, 01.02.2001, p. 453-455.

Research output: Contribution to journal › Article

TY - JOUR

T1 - Synthesis of low-dielectric silica aerogel films by ambient drying

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AU - Hyun, Sang H.

AU - Park, Hyung H.

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N2 - A new ambient drying process that is simple, effective, and reproducible has been developed to synthesize low-k SiO2 aerogel thin films for intermetal dielectric (IMD) materials. The SiO2 aerogel films having a thickness of 9500 angstroms, a high porosity of 79.5%, and a low dielectric constant of 2.0 were obtained by a new ambient drying process using n-heptane as a drying solvent.

AB - A new ambient drying process that is simple, effective, and reproducible has been developed to synthesize low-k SiO2 aerogel thin films for intermetal dielectric (IMD) materials. The SiO2 aerogel films having a thickness of 9500 angstroms, a high porosity of 79.5%, and a low dielectric constant of 2.0 were obtained by a new ambient drying process using n-heptane as a drying solvent.

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Kim GS, Hyun SH, Park HH. Synthesis of low-dielectric silica aerogel films by ambient drying. Journal of the American Ceramic Society. 2001 Feb 1;84(2):453-455.

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