Abstract
A new ambient drying process that is simple, effective, and reproducible has been developed to synthesize low-k SiO2 aerogel thin films for intermetal dielectric (IMD) materials. The SiO2 aerogel films having a thickness of 9500 angstroms, a high porosity of 79.5%, and a low dielectric constant of 2.0 were obtained by a new ambient drying process using n-heptane as a drying solvent.
| Original language | English |
|---|---|
| Pages (from-to) | 453-455 |
| Number of pages | 3 |
| Journal | Journal of the American Ceramic Society |
| Volume | 84 |
| Issue number | 2 |
| Publication status | Published - 2001 Feb 1 |
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All Science Journal Classification (ASJC) codes
- Ceramics and Composites
- Geology
- Geochemistry and Petrology
- Materials Chemistry
Cite this
Kim, G. S., Hyun, S. H., & Park, H. H. (2001). Synthesis of low-dielectric silica aerogel films by ambient drying. Journal of the American Ceramic Society, 84(2), 453-455.