Synthesis of low-dielectric silica aerogel films by ambient drying

Gun S. Kim; Sang H. Hyun; Hyung H. Park

doi:10.1111/j.1151-2916.2001.tb00677.x

Synthesis of low-dielectric silica aerogel films by ambient drying

Gun S. Kim, Sang H. Hyun, Hyung H. Park

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

54 Citations (Scopus)

Abstract

A new ambient drying process that is simple, effective, and reproducible has been developed to synthesize low-k SiO₂ aerogel thin films for intermetal dielectric (IMD) materials. The SiO₂ aerogel films having a thickness of 9500 angstroms, a high porosity of 79.5%, and a low dielectric constant of 2.0 were obtained by a new ambient drying process using n-heptane as a drying solvent.

Original language	English
Pages (from-to)	453-455
Number of pages	3
Journal	Journal of the American Ceramic Society
Volume	84
Issue number	2
DOIs	https://doi.org/10.1111/j.1151-2916.2001.tb00677.x
Publication status	Published - 2001

All Science Journal Classification (ASJC) codes

Ceramics and Composites
Materials Chemistry

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10.1111/j.1151-2916.2001.tb00677.x

Cite this

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abstract = "A new ambient drying process that is simple, effective, and reproducible has been developed to synthesize low-k SiO2 aerogel thin films for intermetal dielectric (IMD) materials. The SiO2 aerogel films having a thickness of 9500 angstroms, a high porosity of 79.5%, and a low dielectric constant of 2.0 were obtained by a new ambient drying process using n-heptane as a drying solvent.",

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Synthesis of low-dielectric silica aerogel films by ambient drying

Abstract

All Science Journal Classification (ASJC) codes

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