Abstract
A new ambient drying process that is simple, effective, and reproducible has been developed to synthesize low-k SiO2 aerogel thin films for intermetal dielectric (IMD) materials. The SiO2 aerogel films having a thickness of 9500 angstroms, a high porosity of 79.5%, and a low dielectric constant of 2.0 were obtained by a new ambient drying process using n-heptane as a drying solvent.
Original language | English |
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Pages (from-to) | 453-455 |
Number of pages | 3 |
Journal | Journal of the American Ceramic Society |
Volume | 84 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2001 |
All Science Journal Classification (ASJC) codes
- Ceramics and Composites
- Materials Chemistry