Synthesis of low-dielectric silica aerogel films by ambient drying

Gun S. Kim, Sang H. Hyun, Hyung H. Park

Research output: Contribution to journalArticle

51 Citations (Scopus)

Abstract

A new ambient drying process that is simple, effective, and reproducible has been developed to synthesize low-k SiO2 aerogel thin films for intermetal dielectric (IMD) materials. The SiO2 aerogel films having a thickness of 9500 angstroms, a high porosity of 79.5%, and a low dielectric constant of 2.0 were obtained by a new ambient drying process using n-heptane as a drying solvent.

Original languageEnglish
Pages (from-to)453-455
Number of pages3
JournalJournal of the American Ceramic Society
Volume84
Issue number2
Publication statusPublished - 2001 Feb 1

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Geology
  • Geochemistry and Petrology
  • Materials Chemistry

Cite this