Synthesis of low-k porous silica films via freeze drying

S. H. Hyun, T. Y. Kim, G. S. Kim, H. H. Park

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Low-k porous silica thin films were synthesized using the freeze drying technique. This new technique is simpler and inexpensive in comparison with the supercritical or ambient pressure drying technique. The film thickness was very sensitive to spin rpm and could be controlled in the range of 1100 nm-250 nm by adjusting rpm from 1000 to 7000. The average porosity and the dielectric constant of freeze-dried films were found to be approximately 60% (0.9 g/cm3).

Original languageEnglish
Pages (from-to)1863-1866
Number of pages4
JournalJournal of Materials Science Letters
Volume19
Issue number20
DOIs
Publication statusPublished - 2000 Oct 1

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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