Low-k porous silica thin films were synthesized using the freeze drying technique. This new technique is simpler and inexpensive in comparison with the supercritical or ambient pressure drying technique. The film thickness was very sensitive to spin rpm and could be controlled in the range of 1100 nm-250 nm by adjusting rpm from 1000 to 7000. The average porosity and the dielectric constant of freeze-dried films were found to be approximately 60% (0.9 g/cm3).
Bibliographical noteFunding Information:
This work was supported in part by Samsung Electronics Co. under a ’99-contract.
All Science Journal Classification (ASJC) codes
- Materials Science(all)