Synthesis of Sr2Nb3O10 nanosheets and their application for growth of thin film using an electrophoretic method

Woong Hee Lee, Mir Im, Sang Hyo Kweon, Jong Un Woo, Sahn Nahm, Ji Won Choi, Seong Ju Hwang

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

K(Sr2Nb3)O10 (KSN) ceramic without the secondary phase was obtained from a KSN + 0.05K2O specimen sintered at 1350°C. This ceramic was used as the precursor to synthesize Sr2Nb3O10 (SNO) nanosheets, because it has a pure KSN phase with a large (002) plane. The SNO nanosheets were deposited on a Pt/Ti/SiO2/Si substrate using the electrophoresis method at room temperature, and heated at various temperatures to get rid of the organic defects. The crystalline SNO phase without organic defects was formed in film annealed at 600°C. However, when the annealing temperature exceeded 600°C, the Pt electrode became unstable, resulting in degradation of the SNO film. Good electric properties were obtained from the SNO film annealed at 600°C: dielectric constant of 70, dielectric loss of 0.017 at 1.0 MHz, leakage current density of 3.5×10−8 A/cm2 at 0.2 MV/cm, and a breakdown electric field of 0.25 MV/cm.

Original languageEnglish
Pages (from-to)1098-1107
Number of pages10
JournalJournal of the American Ceramic Society
Volume100
Issue number3
DOIs
Publication statusPublished - 2017 Mar 1

Bibliographical note

Funding Information:
This work was conducted under the framework of Research and Development program of the Korea Institute of Energy Research (KIER) (B6-2454). The authors also thank the KU-KIST graduate school program of Korea University.

Publisher Copyright:
© 2016 The American Ceramic Society

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Materials Chemistry

Fingerprint

Dive into the research topics of 'Synthesis of Sr<sub>2</sub>Nb<sub>3</sub>O<sub>10</sub> nanosheets and their application for growth of thin film using an electrophoretic method'. Together they form a unique fingerprint.

Cite this