Synthesis of Sr2Nb3O10 nanosheets and their application for growth of thin film using an electrophoretic method

Woong Hee Lee, Mir Im, Sang Hyo Kweon, Jong Un Woo, Sahn Nahm, Ji Won Choi, Seong Ju Hwang

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

K(Sr2Nb3)O10 (KSN) ceramic without the secondary phase was obtained from a KSN + 0.05K2O specimen sintered at 1350°C. This ceramic was used as the precursor to synthesize Sr2Nb3O10 (SNO) nanosheets, because it has a pure KSN phase with a large (002) plane. The SNO nanosheets were deposited on a Pt/Ti/SiO2/Si substrate using the electrophoresis method at room temperature, and heated at various temperatures to get rid of the organic defects. The crystalline SNO phase without organic defects was formed in film annealed at 600°C. However, when the annealing temperature exceeded 600°C, the Pt electrode became unstable, resulting in degradation of the SNO film. Good electric properties were obtained from the SNO film annealed at 600°C: dielectric constant of 70, dielectric loss of 0.017 at 1.0 MHz, leakage current density of 3.5×10−8 A/cm2 at 0.2 MV/cm, and a breakdown electric field of 0.25 MV/cm.

Original languageEnglish
Pages (from-to)1098-1107
Number of pages10
JournalJournal of the American Ceramic Society
Volume100
Issue number3
DOIs
Publication statusPublished - 2017 Mar 1

Fingerprint

Nanosheets
Thin films
ceramics
defect
Defects
temperature
annealing
Dielectric losses
Electrophoresis
density current
Leakage currents
Temperature
leakage
electric field
electrokinesis
electrode
Electric properties
Permittivity
Current density
Electric fields

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Geology
  • Geochemistry and Petrology
  • Materials Chemistry

Cite this

Lee, Woong Hee ; Im, Mir ; Kweon, Sang Hyo ; Woo, Jong Un ; Nahm, Sahn ; Choi, Ji Won ; Hwang, Seong Ju. / Synthesis of Sr2Nb3O10 nanosheets and their application for growth of thin film using an electrophoretic method. In: Journal of the American Ceramic Society. 2017 ; Vol. 100, No. 3. pp. 1098-1107.
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Synthesis of Sr2Nb3O10 nanosheets and their application for growth of thin film using an electrophoretic method. / Lee, Woong Hee; Im, Mir; Kweon, Sang Hyo; Woo, Jong Un; Nahm, Sahn; Choi, Ji Won; Hwang, Seong Ju.

In: Journal of the American Ceramic Society, Vol. 100, No. 3, 01.03.2017, p. 1098-1107.

Research output: Contribution to journalArticle

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AU - Lee, Woong Hee

AU - Im, Mir

AU - Kweon, Sang Hyo

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AU - Nahm, Sahn

AU - Choi, Ji Won

AU - Hwang, Seong Ju

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N2 - K(Sr2Nb3)O10 (KSN) ceramic without the secondary phase was obtained from a KSN + 0.05K2O specimen sintered at 1350°C. This ceramic was used as the precursor to synthesize Sr2Nb3O10 − (SNO−) nanosheets, because it has a pure KSN phase with a large (002) plane. The SNO− nanosheets were deposited on a Pt/Ti/SiO2/Si substrate using the electrophoresis method at room temperature, and heated at various temperatures to get rid of the organic defects. The crystalline SNO phase without organic defects was formed in film annealed at 600°C. However, when the annealing temperature exceeded 600°C, the Pt electrode became unstable, resulting in degradation of the SNO film. Good electric properties were obtained from the SNO film annealed at 600°C: dielectric constant of 70, dielectric loss of 0.017 at 1.0 MHz, leakage current density of 3.5×10−8 A/cm2 at 0.2 MV/cm, and a breakdown electric field of 0.25 MV/cm.

AB - K(Sr2Nb3)O10 (KSN) ceramic without the secondary phase was obtained from a KSN + 0.05K2O specimen sintered at 1350°C. This ceramic was used as the precursor to synthesize Sr2Nb3O10 − (SNO−) nanosheets, because it has a pure KSN phase with a large (002) plane. The SNO− nanosheets were deposited on a Pt/Ti/SiO2/Si substrate using the electrophoresis method at room temperature, and heated at various temperatures to get rid of the organic defects. The crystalline SNO phase without organic defects was formed in film annealed at 600°C. However, when the annealing temperature exceeded 600°C, the Pt electrode became unstable, resulting in degradation of the SNO film. Good electric properties were obtained from the SNO film annealed at 600°C: dielectric constant of 70, dielectric loss of 0.017 at 1.0 MHz, leakage current density of 3.5×10−8 A/cm2 at 0.2 MV/cm, and a breakdown electric field of 0.25 MV/cm.

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