Abstract
V-doped semi-insulating (VDSI) SiC crystal is a promising substrate for high-frequency electronic devices achieved using GaN epitaxial films. However, V doping in a SiC crystal is difficult to control owing to the different sublimation temperatures of VC and SiC. The amount of V changes depending on the growth sequence, which has been a significant concern in VDSI SiC substrates in terms of wafer reliability. In this study, therefore, we aimed to synthesize a single source by vaporizing Si, C, and V under the same conditions to improve the doping issue in VDSI SiC. We synthesized V-doped SiC powder as the starting material for VDSI SiC substrate based on thermodynamic modeling, and the synthesized powder was used to grow a VDSI SiC crystal via physical vapor transport. Finally, considering the homogeneous V concentration in the grown crystal, the synthesized V-doped SiC was observed to be effective to grow VDSI SiC independent of the growth sequence.
| Original language | English |
|---|---|
| Pages (from-to) | 22632-22637 |
| Number of pages | 6 |
| Journal | Ceramics International |
| Volume | 44 |
| Issue number | 18 |
| DOIs | |
| Publication status | Published - 2018 Dec 15 |
Bibliographical note
Funding Information:This work was financially supported by the Strategic Core Materials Technology Development Program (No. 10050661 ) funded by the Ministry of Trade, Industry and Energy ( MOTIE ), Korea . The authors thank Dr. Ishik Choi, Mr. Tae-Hee Kim, Miss Kwang-Hee Jung (Sapphire technology Co.), Dr. Hyeong-Seuk Choi, Miss Ji-Young Yoon, Dae-Seop Byeon (KICET), and Mr. Chae-Young Lee (Dong-Eui University) for their technical comments on the growth and characterization of SiC crystals. SMJ and EJJ thank Dr. Tae-Eun Hong at Korea Basic Science Supporting Institute (KBSI) for his technical support regarding secondary ion mass spectrometry (SIMS) analysis.
Funding Information:
This work was financially supported by the Strategic Core Materials Technology Development Program (No. 10050661) funded by the Ministry of Trade, Industry and Energy (MOTIE), Korea. The authors thank Dr. Ishik Choi, Mr. Tae-Hee Kim, Miss Kwang-Hee Jung (Sapphire technology Co.), Dr. Hyeong-Seuk Choi, Miss Ji-Young Yoon, Dae-Seop Byeon (KICET), and Mr. Chae-Young Lee (Dong-Eui University) for their technical comments on the growth and characterization of SiC crystals. SMJ and EJJ thank Dr. Tae-Eun Hong at Korea Basic Science Supporting Institute (KBSI) for his technical support regarding secondary ion mass spectrometry (SIMS) analysis.
Publisher Copyright:
© 2018 Elsevier Ltd and Techna Group S.r.l.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Process Chemistry and Technology
- Surfaces, Coatings and Films
- Materials Chemistry