Synthesis of V-doped SiC powder for growth of semi-insulating SiC crystals

Eunjin Jung, Younghee Kim, Yong Jin Kwon, Chae Young Lee, Myung Hyun Lee, Won Jae Lee, Doo Jin Choi, Seong Min Jeong

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Abstract

V-doped semi-insulating (VDSI) SiC crystal is a promising substrate for high-frequency electronic devices achieved using GaN epitaxial films. However, V doping in a SiC crystal is difficult to control owing to the different sublimation temperatures of VC and SiC. The amount of V changes depending on the growth sequence, which has been a significant concern in VDSI SiC substrates in terms of wafer reliability. In this study, therefore, we aimed to synthesize a single source by vaporizing Si, C, and V under the same conditions to improve the doping issue in VDSI SiC. We synthesized V-doped SiC powder as the starting material for VDSI SiC substrate based on thermodynamic modeling, and the synthesized powder was used to grow a VDSI SiC crystal via physical vapor transport. Finally, considering the homogeneous V concentration in the grown crystal, the synthesized V-doped SiC was observed to be effective to grow VDSI SiC independent of the growth sequence.

Original languageEnglish
Pages (from-to)22632-22637
Number of pages6
JournalCeramics International
Volume44
Issue number18
DOIs
Publication statusPublished - 2018 Dec 15

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

Jung, E., Kim, Y., Kwon, Y. J., Lee, C. Y., Lee, M. H., Lee, W. J., Choi, D. J., & Jeong, S. M. (2018). Synthesis of V-doped SiC powder for growth of semi-insulating SiC crystals. Ceramics International, 44(18), 22632-22637. https://doi.org/10.1016/j.ceramint.2018.09.039