Synthesis of wafer-scale hexagonal boron nitride monolayers free of aminoborane nanoparticles by chemical vapor deposition

Jaehyun Han, Jun Young Lee, Heemin Kwon, Jong Souk Yeo

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

Hexagonal boron nitride (h-BN) has gained great attention as a two-dimensional material, along with graphene. In this work, high-quality h-BN monolayers were grown in wafer scale (7 × 7 cm2) on Cu substrates by using low-pressure chemical vapor deposition (LPCVD). We created h-BN monolayers that were free of polymeric aminoborane (BH2NH 2) nanoparticles, which are undesirable by-products of the ammonia borane precursor, by employing a simple filtering system in the CVD process. The optical band gap of 6.06 eV and sharp and symmetric Raman peak measured at 1371 cm-1 indicate the synthesis of monolayer h-BN. In addition, spherical aberration (CS)-corrected high-resolution transmission electron microscopic images confirm the production of a single-layer hexagonal array of boron and nitrogen atoms.

Original languageEnglish
Article number145604
JournalNanotechnology
Volume25
Issue number14
DOIs
Publication statusPublished - 2014 Apr 11

Fingerprint

Boron nitride
Chemical vapor deposition
Monolayers
Nanoparticles
Boranes
Low pressure chemical vapor deposition
Boron
Graphite
Optical band gaps
Aberrations
Ammonia
Graphene
Byproducts
Nitrogen
Atoms
boron nitride
Electrons
Substrates

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Cite this

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Synthesis of wafer-scale hexagonal boron nitride monolayers free of aminoborane nanoparticles by chemical vapor deposition. / Han, Jaehyun; Lee, Jun Young; Kwon, Heemin; Yeo, Jong Souk.

In: Nanotechnology, Vol. 25, No. 14, 145604, 11.04.2014.

Research output: Contribution to journalArticle

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