Synthesis of wafer-scale uniform molybdenum disulfide films with control over the layer number using a gas phase sulfur precursor

Youngbin Lee, Jinhwan Lee, Hunyoung Bark, Il Kwon Oh, Gyeong Hee Ryu, Zonghoon Lee, Hyungjun Kim, Jeong Ho Cho, Jong Hyun Ahn, Changgu Lee

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126 Citations (Scopus)


We describe a method for synthesizing large-area and uniform molybdenum disulfide films, with control over the layer number, on insulating substrates using a gas phase sulfuric precursor (H2S) and a molybdenum metal source. The metal layer thickness was varied to effectively control the number of layers (2 to 12) present in the synthesized film. The films were grown on wafer-scale Si/SiO2 or quartz substrates and displayed excellent uniformity and a high crystallinity over the entire area. Thin film transistors were prepared using these materials, and the performances of the devices were tested. The devices displayed an on/off current ratio of 105, a mobility of 0.12 cm2 V-1 s-1 (mean mobility value of 0.07 cm2 V-1 s-1), and reliable operation.

Original languageEnglish
Pages (from-to)2821-2826
Number of pages6
Issue number5
Publication statusPublished - 2014 Mar 7


All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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