Abstract
We describe a method for synthesizing large-area and uniform molybdenum disulfide films, with control over the layer number, on insulating substrates using a gas phase sulfuric precursor (H2S) and a molybdenum metal source. The metal layer thickness was varied to effectively control the number of layers (2 to 12) present in the synthesized film. The films were grown on wafer-scale Si/SiO2 or quartz substrates and displayed excellent uniformity and a high crystallinity over the entire area. Thin film transistors were prepared using these materials, and the performances of the devices were tested. The devices displayed an on/off current ratio of 105, a mobility of 0.12 cm2 V-1 s-1 (mean mobility value of 0.07 cm2 V-1 s-1), and reliable operation.
Original language | English |
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Pages (from-to) | 2821-2826 |
Number of pages | 6 |
Journal | Nanoscale |
Volume | 6 |
Issue number | 5 |
DOIs | |
Publication status | Published - 2014 Mar 7 |
All Science Journal Classification (ASJC) codes
- Materials Science(all)