Abstract
We describe a method for synthesizing large-area and uniform molybdenum disulfide films, with control over the layer number, on insulating substrates using a gas phase sulfuric precursor (H2S) and a molybdenum metal source. The metal layer thickness was varied to effectively control the number of layers (2 to 12) present in the synthesized film. The films were grown on wafer-scale Si/SiO2 or quartz substrates and displayed excellent uniformity and a high crystallinity over the entire area. Thin film transistors were prepared using these materials, and the performances of the devices were tested. The devices displayed an on/off current ratio of 105, a mobility of 0.12 cm2 V-1 s-1 (mean mobility value of 0.07 cm2 V-1 s-1), and reliable operation.
| Original language | English |
|---|---|
| Pages (from-to) | 2821-2826 |
| Number of pages | 6 |
| Journal | Nanoscale |
| Volume | 6 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2014 Mar 7 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
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Synthesis of wafer-scale uniform molybdenum disulfide films with control over the layer number using a gas phase sulfur precursor. / Lee, Youngbin; Lee, Jinhwan; Bark, Hunyoung; Oh, Il Kwon; Ryu, Gyeong Hee; Lee, Zonghoon; Kim, Hyungjun; Cho, Jeong Ho; Ahn, Jong Hyun; Lee, Changgu.
In: Nanoscale, Vol. 6, No. 5, 07.03.2014, p. 2821-2826.Research output: Contribution to journal › Article
TY - JOUR
T1 - Synthesis of wafer-scale uniform molybdenum disulfide films with control over the layer number using a gas phase sulfur precursor
AU - Lee, Youngbin
AU - Lee, Jinhwan
AU - Bark, Hunyoung
AU - Oh, Il Kwon
AU - Ryu, Gyeong Hee
AU - Lee, Zonghoon
AU - Kim, Hyungjun
AU - Cho, Jeong Ho
AU - Ahn, Jong Hyun
AU - Lee, Changgu
PY - 2014/3/7
Y1 - 2014/3/7
N2 - We describe a method for synthesizing large-area and uniform molybdenum disulfide films, with control over the layer number, on insulating substrates using a gas phase sulfuric precursor (H2S) and a molybdenum metal source. The metal layer thickness was varied to effectively control the number of layers (2 to 12) present in the synthesized film. The films were grown on wafer-scale Si/SiO2 or quartz substrates and displayed excellent uniformity and a high crystallinity over the entire area. Thin film transistors were prepared using these materials, and the performances of the devices were tested. The devices displayed an on/off current ratio of 105, a mobility of 0.12 cm2 V-1 s-1 (mean mobility value of 0.07 cm2 V-1 s-1), and reliable operation.
AB - We describe a method for synthesizing large-area and uniform molybdenum disulfide films, with control over the layer number, on insulating substrates using a gas phase sulfuric precursor (H2S) and a molybdenum metal source. The metal layer thickness was varied to effectively control the number of layers (2 to 12) present in the synthesized film. The films were grown on wafer-scale Si/SiO2 or quartz substrates and displayed excellent uniformity and a high crystallinity over the entire area. Thin film transistors were prepared using these materials, and the performances of the devices were tested. The devices displayed an on/off current ratio of 105, a mobility of 0.12 cm2 V-1 s-1 (mean mobility value of 0.07 cm2 V-1 s-1), and reliable operation.
UR - http://www.scopus.com/inward/record.url?scp=84894641277&partnerID=8YFLogxK
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U2 - 10.1039/c3nr05993f
DO - 10.1039/c3nr05993f
M3 - Article
AN - SCOPUS:84894641277
VL - 6
SP - 2821
EP - 2826
JO - Nanoscale
JF - Nanoscale
SN - 2040-3364
IS - 5
ER -