Abstract
We report on a systematic investigation on the performance and stability of p-channel and n-channel top-gate OFETs, with a CYTOP/Al2O 3 bilayer gate dielectric, exposed to controlled dry oxygen and humid atmospheres. Despite the severe conditions of environmental exposure, p-channel and n-channel top-gate OFETs show only minor changes of their performance parameters without undergoing irreversible damage. When correlated with the conditions of environmental exposure, these changes provide new insight into the possible physical mechanisms in the presence of oxygen and water. Photoexcited charge collection spectroscopy experiments provided further evidence of oxygen and water effects on OFETs. Top-gate OFETs also display outstanding durability, even when exposed to oxygen plasma and subsequent immersion in water or operated under aqueous media. These remarkable properties arise as a consequence of the use of relatively air stable organic semiconductors and proper engineering of the OFET structure.
| Original language | English |
|---|---|
| Pages (from-to) | 3378-3386 |
| Number of pages | 9 |
| Journal | ACS Applied Materials and Interfaces |
| Volume | 6 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2014 Mar 12 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
Cite this
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Systematic reliability study of top-gate p- and n-channel organic field-effect transistors. / Hwang, Do Kyung; Fuentes-Hernandez, Canek; Fenoll, Mathieu; Yun, Minseong; Park, Jihoon; Shim, Jae Won; Knauer, Keith A.; Dindar, Amir; Kim, Hyungchul; Kim, Yongjin; Kim, Jungbae; Cheun, Hyeunseok; Payne, Marcia M.; Graham, Samuel; Im, Seongil; Anthony, John E.; Kippelen, Bernard.
In: ACS Applied Materials and Interfaces, Vol. 6, No. 5, 12.03.2014, p. 3378-3386.Research output: Contribution to journal › Article
TY - JOUR
T1 - Systematic reliability study of top-gate p- and n-channel organic field-effect transistors
AU - Hwang, Do Kyung
AU - Fuentes-Hernandez, Canek
AU - Fenoll, Mathieu
AU - Yun, Minseong
AU - Park, Jihoon
AU - Shim, Jae Won
AU - Knauer, Keith A.
AU - Dindar, Amir
AU - Kim, Hyungchul
AU - Kim, Yongjin
AU - Kim, Jungbae
AU - Cheun, Hyeunseok
AU - Payne, Marcia M.
AU - Graham, Samuel
AU - Im, Seongil
AU - Anthony, John E.
AU - Kippelen, Bernard
PY - 2014/3/12
Y1 - 2014/3/12
N2 - We report on a systematic investigation on the performance and stability of p-channel and n-channel top-gate OFETs, with a CYTOP/Al2O 3 bilayer gate dielectric, exposed to controlled dry oxygen and humid atmospheres. Despite the severe conditions of environmental exposure, p-channel and n-channel top-gate OFETs show only minor changes of their performance parameters without undergoing irreversible damage. When correlated with the conditions of environmental exposure, these changes provide new insight into the possible physical mechanisms in the presence of oxygen and water. Photoexcited charge collection spectroscopy experiments provided further evidence of oxygen and water effects on OFETs. Top-gate OFETs also display outstanding durability, even when exposed to oxygen plasma and subsequent immersion in water or operated under aqueous media. These remarkable properties arise as a consequence of the use of relatively air stable organic semiconductors and proper engineering of the OFET structure.
AB - We report on a systematic investigation on the performance and stability of p-channel and n-channel top-gate OFETs, with a CYTOP/Al2O 3 bilayer gate dielectric, exposed to controlled dry oxygen and humid atmospheres. Despite the severe conditions of environmental exposure, p-channel and n-channel top-gate OFETs show only minor changes of their performance parameters without undergoing irreversible damage. When correlated with the conditions of environmental exposure, these changes provide new insight into the possible physical mechanisms in the presence of oxygen and water. Photoexcited charge collection spectroscopy experiments provided further evidence of oxygen and water effects on OFETs. Top-gate OFETs also display outstanding durability, even when exposed to oxygen plasma and subsequent immersion in water or operated under aqueous media. These remarkable properties arise as a consequence of the use of relatively air stable organic semiconductors and proper engineering of the OFET structure.
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U2 - 10.1021/am405424k
DO - 10.1021/am405424k
M3 - Article
VL - 6
SP - 3378
EP - 3386
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
SN - 1944-8244
IS - 5
ER -