Systematic reliability study of top-gate p- and n-channel organic field-effect transistors

Do Kyung Hwang, Canek Fuentes-Hernandez, Mathieu Fenoll, Minseong Yun, Jihoon Park, Jae Won Shim, Keith A. Knauer, Amir Dindar, Hyungchul Kim, Yongjin Kim, Jungbae Kim, Hyeunseok Cheun, Marcia M. Payne, Samuel Graham, Seongil Im, John E. Anthony, Bernard Kippelen

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

We report on a systematic investigation on the performance and stability of p-channel and n-channel top-gate OFETs, with a CYTOP/Al2O 3 bilayer gate dielectric, exposed to controlled dry oxygen and humid atmospheres. Despite the severe conditions of environmental exposure, p-channel and n-channel top-gate OFETs show only minor changes of their performance parameters without undergoing irreversible damage. When correlated with the conditions of environmental exposure, these changes provide new insight into the possible physical mechanisms in the presence of oxygen and water. Photoexcited charge collection spectroscopy experiments provided further evidence of oxygen and water effects on OFETs. Top-gate OFETs also display outstanding durability, even when exposed to oxygen plasma and subsequent immersion in water or operated under aqueous media. These remarkable properties arise as a consequence of the use of relatively air stable organic semiconductors and proper engineering of the OFET structure.

Original languageEnglish
Pages (from-to)3378-3386
Number of pages9
JournalACS Applied Materials and Interfaces
Volume6
Issue number5
DOIs
Publication statusPublished - 2014 Mar 12

Fingerprint

Organic field effect transistors
Oxygen
Water
Gates (transistor)
Semiconducting organic compounds
Gate dielectrics
Durability
Spectroscopy
Plasmas
Air
Experiments

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Hwang, D. K., Fuentes-Hernandez, C., Fenoll, M., Yun, M., Park, J., Shim, J. W., ... Kippelen, B. (2014). Systematic reliability study of top-gate p- and n-channel organic field-effect transistors. ACS Applied Materials and Interfaces, 6(5), 3378-3386. https://doi.org/10.1021/am405424k
Hwang, Do Kyung ; Fuentes-Hernandez, Canek ; Fenoll, Mathieu ; Yun, Minseong ; Park, Jihoon ; Shim, Jae Won ; Knauer, Keith A. ; Dindar, Amir ; Kim, Hyungchul ; Kim, Yongjin ; Kim, Jungbae ; Cheun, Hyeunseok ; Payne, Marcia M. ; Graham, Samuel ; Im, Seongil ; Anthony, John E. ; Kippelen, Bernard. / Systematic reliability study of top-gate p- and n-channel organic field-effect transistors. In: ACS Applied Materials and Interfaces. 2014 ; Vol. 6, No. 5. pp. 3378-3386.
@article{3dd6d6c7f3bb44f7af435a0b4f4a48d8,
title = "Systematic reliability study of top-gate p- and n-channel organic field-effect transistors",
abstract = "We report on a systematic investigation on the performance and stability of p-channel and n-channel top-gate OFETs, with a CYTOP/Al2O 3 bilayer gate dielectric, exposed to controlled dry oxygen and humid atmospheres. Despite the severe conditions of environmental exposure, p-channel and n-channel top-gate OFETs show only minor changes of their performance parameters without undergoing irreversible damage. When correlated with the conditions of environmental exposure, these changes provide new insight into the possible physical mechanisms in the presence of oxygen and water. Photoexcited charge collection spectroscopy experiments provided further evidence of oxygen and water effects on OFETs. Top-gate OFETs also display outstanding durability, even when exposed to oxygen plasma and subsequent immersion in water or operated under aqueous media. These remarkable properties arise as a consequence of the use of relatively air stable organic semiconductors and proper engineering of the OFET structure.",
author = "Hwang, {Do Kyung} and Canek Fuentes-Hernandez and Mathieu Fenoll and Minseong Yun and Jihoon Park and Shim, {Jae Won} and Knauer, {Keith A.} and Amir Dindar and Hyungchul Kim and Yongjin Kim and Jungbae Kim and Hyeunseok Cheun and Payne, {Marcia M.} and Samuel Graham and Seongil Im and Anthony, {John E.} and Bernard Kippelen",
year = "2014",
month = "3",
day = "12",
doi = "10.1021/am405424k",
language = "English",
volume = "6",
pages = "3378--3386",
journal = "ACS applied materials & interfaces",
issn = "1944-8244",
publisher = "American Chemical Society",
number = "5",

}

Hwang, DK, Fuentes-Hernandez, C, Fenoll, M, Yun, M, Park, J, Shim, JW, Knauer, KA, Dindar, A, Kim, H, Kim, Y, Kim, J, Cheun, H, Payne, MM, Graham, S, Im, S, Anthony, JE & Kippelen, B 2014, 'Systematic reliability study of top-gate p- and n-channel organic field-effect transistors', ACS Applied Materials and Interfaces, vol. 6, no. 5, pp. 3378-3386. https://doi.org/10.1021/am405424k

Systematic reliability study of top-gate p- and n-channel organic field-effect transistors. / Hwang, Do Kyung; Fuentes-Hernandez, Canek; Fenoll, Mathieu; Yun, Minseong; Park, Jihoon; Shim, Jae Won; Knauer, Keith A.; Dindar, Amir; Kim, Hyungchul; Kim, Yongjin; Kim, Jungbae; Cheun, Hyeunseok; Payne, Marcia M.; Graham, Samuel; Im, Seongil; Anthony, John E.; Kippelen, Bernard.

In: ACS Applied Materials and Interfaces, Vol. 6, No. 5, 12.03.2014, p. 3378-3386.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Systematic reliability study of top-gate p- and n-channel organic field-effect transistors

AU - Hwang, Do Kyung

AU - Fuentes-Hernandez, Canek

AU - Fenoll, Mathieu

AU - Yun, Minseong

AU - Park, Jihoon

AU - Shim, Jae Won

AU - Knauer, Keith A.

AU - Dindar, Amir

AU - Kim, Hyungchul

AU - Kim, Yongjin

AU - Kim, Jungbae

AU - Cheun, Hyeunseok

AU - Payne, Marcia M.

AU - Graham, Samuel

AU - Im, Seongil

AU - Anthony, John E.

AU - Kippelen, Bernard

PY - 2014/3/12

Y1 - 2014/3/12

N2 - We report on a systematic investigation on the performance and stability of p-channel and n-channel top-gate OFETs, with a CYTOP/Al2O 3 bilayer gate dielectric, exposed to controlled dry oxygen and humid atmospheres. Despite the severe conditions of environmental exposure, p-channel and n-channel top-gate OFETs show only minor changes of their performance parameters without undergoing irreversible damage. When correlated with the conditions of environmental exposure, these changes provide new insight into the possible physical mechanisms in the presence of oxygen and water. Photoexcited charge collection spectroscopy experiments provided further evidence of oxygen and water effects on OFETs. Top-gate OFETs also display outstanding durability, even when exposed to oxygen plasma and subsequent immersion in water or operated under aqueous media. These remarkable properties arise as a consequence of the use of relatively air stable organic semiconductors and proper engineering of the OFET structure.

AB - We report on a systematic investigation on the performance and stability of p-channel and n-channel top-gate OFETs, with a CYTOP/Al2O 3 bilayer gate dielectric, exposed to controlled dry oxygen and humid atmospheres. Despite the severe conditions of environmental exposure, p-channel and n-channel top-gate OFETs show only minor changes of their performance parameters without undergoing irreversible damage. When correlated with the conditions of environmental exposure, these changes provide new insight into the possible physical mechanisms in the presence of oxygen and water. Photoexcited charge collection spectroscopy experiments provided further evidence of oxygen and water effects on OFETs. Top-gate OFETs also display outstanding durability, even when exposed to oxygen plasma and subsequent immersion in water or operated under aqueous media. These remarkable properties arise as a consequence of the use of relatively air stable organic semiconductors and proper engineering of the OFET structure.

UR - http://www.scopus.com/inward/record.url?scp=84896351939&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84896351939&partnerID=8YFLogxK

U2 - 10.1021/am405424k

DO - 10.1021/am405424k

M3 - Article

VL - 6

SP - 3378

EP - 3386

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

SN - 1944-8244

IS - 5

ER -