T-DVS: Temperature-aware DVS based on Temperature Inversion Phenomenon

Jinsoo Park, Hojung Cha

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Dynamic Voltage and Frequency Scaling (DVFS) is a widely used methodology to reduce the power consumption of mobile devices. This scheme performs frequency scaling in accordance with a specific governor and sets an operating voltage to be paired with the frequency. Temperature is one of the critical parameters affecting device operation. Practically, a guard-band exists in the operating voltage to ensure safe processor operation even at the worst temperature. DVFS can be optimized in terms of operating voltage under nominal conditions. In this paper, we propose a Temperature-aware DVS (T-DVS) that aggressively reduces the voltage guard-band. We explore the opportunity of providing the minimum operating voltages for frequencies at different temperatures and realize a dynamic voltage control scheme to optimize power consumption. The effectiveness of T-DVS is validated under various thermal conditions by using multi-core application processor. We experimentally observe that T-DVS leads to voltage gain without performance degradation regardless of both thermal conditions and chip characteristics. We show by using off-the-shelf smartphones that the voltage gain achieved by the scheme results in battery lifetime increment.

Original languageEnglish
Title of host publicationISLPED 2016 - Proceedings of the 2016 International Symposium on Low Power Electronics and Design
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages248-253
Number of pages6
ISBN (Electronic)9781450341851
DOIs
Publication statusPublished - 2016 Aug 8
Event21st IEEE/ACM International Symposium on Low Power Electronics and Design, ISLPED 2016 - San Francisco, United States
Duration: 2016 Aug 82016 Aug 10

Other

Other21st IEEE/ACM International Symposium on Low Power Electronics and Design, ISLPED 2016
CountryUnited States
CitySan Francisco
Period16/8/816/8/10

Fingerprint

Electric potential
Temperature
Electric power utilization
Governors
Smartphones
Mobile devices
Voltage control
Degradation
Dynamic frequency scaling
Voltage scaling
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Park, J., & Cha, H. (2016). T-DVS: Temperature-aware DVS based on Temperature Inversion Phenomenon. In ISLPED 2016 - Proceedings of the 2016 International Symposium on Low Power Electronics and Design (pp. 248-253). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1145/2934583.2934631
Park, Jinsoo ; Cha, Hojung. / T-DVS : Temperature-aware DVS based on Temperature Inversion Phenomenon. ISLPED 2016 - Proceedings of the 2016 International Symposium on Low Power Electronics and Design. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 248-253
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Park, J & Cha, H 2016, T-DVS: Temperature-aware DVS based on Temperature Inversion Phenomenon. in ISLPED 2016 - Proceedings of the 2016 International Symposium on Low Power Electronics and Design. Institute of Electrical and Electronics Engineers Inc., pp. 248-253, 21st IEEE/ACM International Symposium on Low Power Electronics and Design, ISLPED 2016, San Francisco, United States, 16/8/8. https://doi.org/10.1145/2934583.2934631

T-DVS : Temperature-aware DVS based on Temperature Inversion Phenomenon. / Park, Jinsoo; Cha, Hojung.

ISLPED 2016 - Proceedings of the 2016 International Symposium on Low Power Electronics and Design. Institute of Electrical and Electronics Engineers Inc., 2016. p. 248-253.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Park J, Cha H. T-DVS: Temperature-aware DVS based on Temperature Inversion Phenomenon. In ISLPED 2016 - Proceedings of the 2016 International Symposium on Low Power Electronics and Design. Institute of Electrical and Electronics Engineers Inc. 2016. p. 248-253 https://doi.org/10.1145/2934583.2934631