Abstract
Full three-dimensional numerical analysis based on continuum elasticity and model solid theory has been carried out to evaluate some possible means of tailoring the optoelectronic properties of InAs/GaAs quantum dot (QD) nanosystems. Numerical results predicted that while the stacking period control leads to the shifts in valence band edges, incorporation of InxGa1-xAs ternary strain relief layer (SRL) causes composition-dependent shifts in conduction band edges. On the other hand, modification of the SRL shape itself did not yield significant changes in the confinement potentials. It is therefore suggested that strain control by incorporation of ternary intermediate layers combined with geometry controls, would allow greater flexibility in the tailoring of the opto-electronic characteristics of QD-based systems.
| Original language | English |
|---|---|
| Pages (from-to) | 145-150 |
| Number of pages | 6 |
| Journal | Electronic Materials Letters |
| Volume | 5 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2009 Dec 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
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Tailoring of optoelectronic properties of InAs/GaAs quantum dot nanosystems by strain control. / Lee, Woong; Shin, Keesam; Myoung, Jae Min.
In: Electronic Materials Letters, Vol. 5, No. 4, 01.12.2009, p. 145-150.Research output: Contribution to journal › Article
TY - JOUR
T1 - Tailoring of optoelectronic properties of InAs/GaAs quantum dot nanosystems by strain control
AU - Lee, Woong
AU - Shin, Keesam
AU - Myoung, Jae Min
PY - 2009/12/1
Y1 - 2009/12/1
N2 - Full three-dimensional numerical analysis based on continuum elasticity and model solid theory has been carried out to evaluate some possible means of tailoring the optoelectronic properties of InAs/GaAs quantum dot (QD) nanosystems. Numerical results predicted that while the stacking period control leads to the shifts in valence band edges, incorporation of InxGa1-xAs ternary strain relief layer (SRL) causes composition-dependent shifts in conduction band edges. On the other hand, modification of the SRL shape itself did not yield significant changes in the confinement potentials. It is therefore suggested that strain control by incorporation of ternary intermediate layers combined with geometry controls, would allow greater flexibility in the tailoring of the opto-electronic characteristics of QD-based systems.
AB - Full three-dimensional numerical analysis based on continuum elasticity and model solid theory has been carried out to evaluate some possible means of tailoring the optoelectronic properties of InAs/GaAs quantum dot (QD) nanosystems. Numerical results predicted that while the stacking period control leads to the shifts in valence band edges, incorporation of InxGa1-xAs ternary strain relief layer (SRL) causes composition-dependent shifts in conduction band edges. On the other hand, modification of the SRL shape itself did not yield significant changes in the confinement potentials. It is therefore suggested that strain control by incorporation of ternary intermediate layers combined with geometry controls, would allow greater flexibility in the tailoring of the opto-electronic characteristics of QD-based systems.
UR - http://www.scopus.com/inward/record.url?scp=77957670986&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77957670986&partnerID=8YFLogxK
U2 - 10.3365/eml.2009.12.145
DO - 10.3365/eml.2009.12.145
M3 - Article
AN - SCOPUS:77957670986
VL - 5
SP - 145
EP - 150
JO - Electronic Materials Letters
JF - Electronic Materials Letters
SN - 1738-8090
IS - 4
ER -