Tb/Ni/TiN Stack for Ultralow Contact Resistive Ni-Tb-InGaAs Alloy to n-In0.53Ga0.47As Layer

Meng Li, Jeongchan Lee, Jungwoo Oh, Hi Deok Lee

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2 Citations (Scopus)


This paper presents a Tb/Ni/TiN stack that can act as a metallic contact for n-In0.53Ga0.47As layer with lower specific contact resistivity. Tb/Ni/TiN layers are deposited sequentially on n-In0.53Ga0.47As via sputtering and Ni(Tb)-InGaAs alloy is formed using rapid thermal annealing. The ultralow specific contact resistivity (ρc) of 7.98 × 10−9 Ω cm2 is obtained between Ni(Tb)-InGaAs and n-In0.53Ga0.47As layers, which is more than two orders of magnitude lower than that of a control sample with a Ni/TiN stack. The increased dopant concentration in the Ni-InGaAs alloy and the lowered barrier height between Ni-InGaAs and n-In0.53Ga0.47As are considered to be possible reasons for the improved contact resistance. The Tb/Ni/TiN stack is promising as a metallic contact for metal-oxide-semiconductor field-effect transistors (MOSFETs) based on n-In0.53Ga0.47As layer.

Original languageEnglish
Article number1800131
JournalPhysica Status Solidi - Rapid Research Letters
Issue number7
Publication statusPublished - 2018 Jul

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

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