Tb/Ni/TiN Stack for Ultralow Contact Resistive Ni-Tb-InGaAs Alloy to n-In0.53Ga0.47As Layer

Meng Li, Jeongchan Lee, Jungwoo Oh, Hi Deok Lee

Research output: Contribution to journalLetter

Abstract

This paper presents a Tb/Ni/TiN stack that can act as a metallic contact for n-In0.53Ga0.47As layer with lower specific contact resistivity. Tb/Ni/TiN layers are deposited sequentially on n-In0.53Ga0.47As via sputtering and Ni(Tb)-InGaAs alloy is formed using rapid thermal annealing. The ultralow specific contact resistivity (ρc) of 7.98 × 10−9 Ω cm2 is obtained between Ni(Tb)-InGaAs and n-In0.53Ga0.47As layers, which is more than two orders of magnitude lower than that of a control sample with a Ni/TiN stack. The increased dopant concentration in the Ni-InGaAs alloy and the lowered barrier height between Ni-InGaAs and n-In0.53Ga0.47As are considered to be possible reasons for the improved contact resistance. The Tb/Ni/TiN stack is promising as a metallic contact for metal-oxide-semiconductor field-effect transistors (MOSFETs) based on n-In0.53Ga0.47As layer.

Original languageEnglish
Article number1800131
JournalPhysica Status Solidi - Rapid Research Letters
Volume12
Issue number7
DOIs
Publication statusPublished - 2018 Jul 1

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Rapid thermal annealing
MOSFET devices
Contact resistance
Sputtering
electric contacts
Doping (additives)
electrical resistivity
contact resistance
metal oxide semiconductors
field effect transistors
sputtering
annealing

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

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title = "Tb/Ni/TiN Stack for Ultralow Contact Resistive Ni-Tb-InGaAs Alloy to n-In0.53Ga0.47As Layer",
abstract = "This paper presents a Tb/Ni/TiN stack that can act as a metallic contact for n-In0.53Ga0.47As layer with lower specific contact resistivity. Tb/Ni/TiN layers are deposited sequentially on n-In0.53Ga0.47As via sputtering and Ni(Tb)-InGaAs alloy is formed using rapid thermal annealing. The ultralow specific contact resistivity (ρc) of 7.98 × 10−9 Ω cm2 is obtained between Ni(Tb)-InGaAs and n-In0.53Ga0.47As layers, which is more than two orders of magnitude lower than that of a control sample with a Ni/TiN stack. The increased dopant concentration in the Ni-InGaAs alloy and the lowered barrier height between Ni-InGaAs and n-In0.53Ga0.47As are considered to be possible reasons for the improved contact resistance. The Tb/Ni/TiN stack is promising as a metallic contact for metal-oxide-semiconductor field-effect transistors (MOSFETs) based on n-In0.53Ga0.47As layer.",
author = "Meng Li and Jeongchan Lee and Jungwoo Oh and Lee, {Hi Deok}",
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Tb/Ni/TiN Stack for Ultralow Contact Resistive Ni-Tb-InGaAs Alloy to n-In0.53Ga0.47As Layer. / Li, Meng; Lee, Jeongchan; Oh, Jungwoo; Lee, Hi Deok.

In: Physica Status Solidi - Rapid Research Letters, Vol. 12, No. 7, 1800131, 01.07.2018.

Research output: Contribution to journalLetter

TY - JOUR

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AU - Lee, Hi Deok

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N2 - This paper presents a Tb/Ni/TiN stack that can act as a metallic contact for n-In0.53Ga0.47As layer with lower specific contact resistivity. Tb/Ni/TiN layers are deposited sequentially on n-In0.53Ga0.47As via sputtering and Ni(Tb)-InGaAs alloy is formed using rapid thermal annealing. The ultralow specific contact resistivity (ρc) of 7.98 × 10−9 Ω cm2 is obtained between Ni(Tb)-InGaAs and n-In0.53Ga0.47As layers, which is more than two orders of magnitude lower than that of a control sample with a Ni/TiN stack. The increased dopant concentration in the Ni-InGaAs alloy and the lowered barrier height between Ni-InGaAs and n-In0.53Ga0.47As are considered to be possible reasons for the improved contact resistance. The Tb/Ni/TiN stack is promising as a metallic contact for metal-oxide-semiconductor field-effect transistors (MOSFETs) based on n-In0.53Ga0.47As layer.

AB - This paper presents a Tb/Ni/TiN stack that can act as a metallic contact for n-In0.53Ga0.47As layer with lower specific contact resistivity. Tb/Ni/TiN layers are deposited sequentially on n-In0.53Ga0.47As via sputtering and Ni(Tb)-InGaAs alloy is formed using rapid thermal annealing. The ultralow specific contact resistivity (ρc) of 7.98 × 10−9 Ω cm2 is obtained between Ni(Tb)-InGaAs and n-In0.53Ga0.47As layers, which is more than two orders of magnitude lower than that of a control sample with a Ni/TiN stack. The increased dopant concentration in the Ni-InGaAs alloy and the lowered barrier height between Ni-InGaAs and n-In0.53Ga0.47As are considered to be possible reasons for the improved contact resistance. The Tb/Ni/TiN stack is promising as a metallic contact for metal-oxide-semiconductor field-effect transistors (MOSFETs) based on n-In0.53Ga0.47As layer.

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