Tb0:3Dy0:7Fe1:9/PbZr0:52Ti 0:48O3 micro-bridge on sinx thin film for low frequency magnetic sensing applications

Dong Gun Lee; Jun Hyun Han; Junwoo Lee; Wook Choi; Yong Kyung Yoo; Jinseok Kim; Kyo Seon Hwang; Tae Song Kim; Dong Won Chun; Yu Chan Kim; Kyu Hyoung Lee; Jeong Hoon Lee

doi:10.7567/JJAP.52.10MC10

Tb_0:3Dy_0:7Fe_1:9/PbZr_0:52Ti _0:48O₃ micro-bridge on sinx thin film for low frequency magnetic sensing applications

Dong Gun Lee, Jun Hyun Han, Junwoo Lee, Wook Choi, Yong Kyung Yoo, Jinseok Kim, Kyo Seon Hwang, Tae Song Kim, Dong Won Chun, Yu Chan Kim, Kyu Hyoung Lee, Jeong Hoon Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

A micro-fabricated bridge sensor for determining minute magnetic field variation is proposed. A micro-bridge with 100 × 400 μm² dimensions (width × length) comprises a multi-layered structure of Tb _0:3Dy_0:7Fe_1:9/SiO₂/Pt/PbZr _0:52Ti_0:48O₃/Pt/Ta on a SiN_x supporting layer. We observed the limit of detection under small DC magnetic field as 1 × 10^-11 T which was converted electrically to 77 μV with a 5 μV noise floor via elastic coupling between magnetostrictive and piezoelectric thin film. The magnetoelectric (ME) voltage was linearly proportional to small magnetic field variance, and the experimental ME coefficient was measured as 9.9 V/(cm·Oe).

Original language	English
Article number	10MC10
Journal	Japanese journal of applied physics
Volume	52
Issue number	10 PART2
DOIs	https://doi.org/10.7567/JJAP.52.10MC10
Publication status	Published - 2013

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.7567/JJAP.52.10MC10

Cite this

@article{0a4ab36fea80413f8098e79f161d47cc,

title = "Tb0:3Dy0:7Fe1:9/PbZr0:52Ti 0:48O3 micro-bridge on sinx thin film for low frequency magnetic sensing applications",

abstract = "A micro-fabricated bridge sensor for determining minute magnetic field variation is proposed. A micro-bridge with 100 × 400 μm2 dimensions (width × length) comprises a multi-layered structure of Tb 0:3Dy0:7Fe1:9/SiO2/Pt/PbZr 0:52Ti0:48O3/Pt/Ta on a SiNx supporting layer. We observed the limit of detection under small DC magnetic field as 1 × 10-11 T which was converted electrically to 77 μV with a 5 μV noise floor via elastic coupling between magnetostrictive and piezoelectric thin film. The magnetoelectric (ME) voltage was linearly proportional to small magnetic field variance, and the experimental ME coefficient was measured as 9.9 V/(cm·Oe).",

author = "Lee, {Dong Gun} and Han, {Jun Hyun} and Junwoo Lee and Wook Choi and Yoo, {Yong Kyung} and Jinseok Kim and Hwang, {Kyo Seon} and Kim, {Tae Song} and Chun, {Dong Won} and Kim, {Yu Chan} and Lee, {Kyu Hyoung} and Lee, {Jeong Hoon}",

year = "2013",

doi = "10.7567/JJAP.52.10MC10",

language = "English",

volume = "52",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

number = "10 PART2",

}

TY - JOUR

T1 - Tb0:3Dy0:7Fe1:9/PbZr0:52Ti 0:48O3 micro-bridge on sinx thin film for low frequency magnetic sensing applications

AU - Lee, Dong Gun

AU - Han, Jun Hyun

AU - Lee, Junwoo

AU - Choi, Wook

AU - Yoo, Yong Kyung

AU - Kim, Jinseok

AU - Hwang, Kyo Seon

AU - Kim, Tae Song

AU - Chun, Dong Won

AU - Kim, Yu Chan

AU - Lee, Kyu Hyoung

AU - Lee, Jeong Hoon

PY - 2013

Y1 - 2013

N2 - A micro-fabricated bridge sensor for determining minute magnetic field variation is proposed. A micro-bridge with 100 × 400 μm2 dimensions (width × length) comprises a multi-layered structure of Tb 0:3Dy0:7Fe1:9/SiO2/Pt/PbZr 0:52Ti0:48O3/Pt/Ta on a SiNx supporting layer. We observed the limit of detection under small DC magnetic field as 1 × 10-11 T which was converted electrically to 77 μV with a 5 μV noise floor via elastic coupling between magnetostrictive and piezoelectric thin film. The magnetoelectric (ME) voltage was linearly proportional to small magnetic field variance, and the experimental ME coefficient was measured as 9.9 V/(cm·Oe).

AB - A micro-fabricated bridge sensor for determining minute magnetic field variation is proposed. A micro-bridge with 100 × 400 μm2 dimensions (width × length) comprises a multi-layered structure of Tb 0:3Dy0:7Fe1:9/SiO2/Pt/PbZr 0:52Ti0:48O3/Pt/Ta on a SiNx supporting layer. We observed the limit of detection under small DC magnetic field as 1 × 10-11 T which was converted electrically to 77 μV with a 5 μV noise floor via elastic coupling between magnetostrictive and piezoelectric thin film. The magnetoelectric (ME) voltage was linearly proportional to small magnetic field variance, and the experimental ME coefficient was measured as 9.9 V/(cm·Oe).

UR - http://www.scopus.com/inward/record.url?scp=84887030678&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84887030678&partnerID=8YFLogxK

U2 - 10.7567/JJAP.52.10MC10

DO - 10.7567/JJAP.52.10MC10

M3 - Article

AN - SCOPUS:84887030678

SN - 0021-4922

VL - 52

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 10 PART2

M1 - 10MC10

ER -

Tb_0:3Dy_0:7Fe_1:9/PbZr_0:52Ti _0:48O₃ micro-bridge on sinx thin film for low frequency magnetic sensing applications

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this