Tb0:3Dy0:7Fe1:9/PbZr0:52Ti 0:48O3 micro-bridge on sinx thin film for low frequency magnetic sensing applications

Dong Gun Lee, Jun Hyun Han, Junwoo Lee, Wook Choi, Yong Kyung Yoo, Jinseok Kim, Kyo Seon Hwang, Tae Song Kim, Dong Won Chun, Yu Chan Kim, Kyu Hyoung Lee, Jeong Hoon Lee

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Abstract

A micro-fabricated bridge sensor for determining minute magnetic field variation is proposed. A micro-bridge with 100 × 400 μm2 dimensions (width × length) comprises a multi-layered structure of Tb 0:3Dy0:7Fe1:9/SiO2/Pt/PbZr 0:52Ti0:48O3/Pt/Ta on a SiNx supporting layer. We observed the limit of detection under small DC magnetic field as 1 × 10-11 T which was converted electrically to 77 μV with a 5 μV noise floor via elastic coupling between magnetostrictive and piezoelectric thin film. The magnetoelectric (ME) voltage was linearly proportional to small magnetic field variance, and the experimental ME coefficient was measured as 9.9 V/(cm·Oe).

Original languageEnglish
Article number10MC10
JournalJapanese journal of applied physics
Volume52
Issue number10 PART2
DOIs
Publication statusPublished - 2013

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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    Lee, D. G., Han, J. H., Lee, J., Choi, W., Yoo, Y. K., Kim, J., Hwang, K. S., Kim, T. S., Chun, D. W., Kim, Y. C., Lee, K. H., & Lee, J. H. (2013). Tb0:3Dy0:7Fe1:9/PbZr0:52Ti 0:48O3 micro-bridge on sinx thin film for low frequency magnetic sensing applications. Japanese journal of applied physics, 52(10 PART2), [10MC10]. https://doi.org/10.7567/JJAP.52.10MC10