TEM and in situ HREM for studying metal-semiconductor interfacial reactions

R. Sinclair, T. J. Konno, D. Hong Ko

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

We have studied the reactions at metal-semiconductor interfaces using high resolution transmission electron microscopy, including in situ observation, and differential scanning calorimetry. There is contrasting behavior depending on the affinity for interaction or segregation. For reactive systems, compound formation ultimately results, but this can be preceded by solid-state amorphization. For non-reactive systems, crystallization of the semiconductor is often achieved with nucleation and growth mediated by the metal phase. Examples are presented on Ti-Si, Pt-GaAs, Al-Si and Ag-Ge systems.

Original languageEnglish
Pages (from-to)111-120
Number of pages10
JournalMaterials Science Forum
Volume155-5
DOIs
Publication statusPublished - 1994
EventProceedings of the International Meeting on Reactive Phase Formation at Interfaces and Diffusion Processes - Aussois, Fr
Duration: 1993 May 211993 May 28

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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