TEM study on volume changes and void formation in Ge2Sb 2Te5 films, with repeated phase changes

Kihoon Do, Dokyu Lee, Dae Hong Ko, Hyunchul Sohn, Mann Ho Cho

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

Changes in volume in Ge2Sb2Te5 (GST) films due to the density change during phase transformations between amorphous and crystallized states and consequent void formations were examined. Transmission electron microscopy (TEM) was used to measure changes in volume during laser-induced crystallization for both as-deposited and melt-quenched GST amorphous films, and changes in density were estimated. We found the formation of voids and their coalescence during repeated heat cycling by laser. A variation in chemical composition around the voids was confirmed using energy-dispersive spectroscopy analysis. The void formation and compositional changes can lead to degradation of reliability in phase-change random access memory devices.

Original languageEnglish
Pages (from-to)H284-H286
JournalElectrochemical and Solid-State Letters
Volume13
Issue number8
DOIs
Publication statusPublished - 2010 Jun 21

Fingerprint

voids
Transmission electron microscopy
transmission electron microscopy
Lasers
Amorphous films
Crystallization
Coalescence
Energy dispersive spectroscopy
Phase transitions
Data storage equipment
Degradation
random access memory
Chemical analysis
coalescing
lasers
phase transformations
chemical composition
crystallization
degradation
heat

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

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TEM study on volume changes and void formation in Ge2Sb 2Te5 films, with repeated phase changes. / Do, Kihoon; Lee, Dokyu; Ko, Dae Hong; Sohn, Hyunchul; Cho, Mann Ho.

In: Electrochemical and Solid-State Letters, Vol. 13, No. 8, 21.06.2010, p. H284-H286.

Research output: Contribution to journalArticle

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AU - Cho, Mann Ho

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