Temperature and density dependence of exciton lifetimes in GaAs/AlGaAs multiple quantum wells

Jang Hee Chu, Jung Chul Seo, Eun Joo Shin, Sung Kyu Yu, Dongho Kim, Young Nam Hwang, Seung Han Park, Ung Kim, Pjotr S. Kop'ev

Research output: Contribution to journalArticle

3 Citations (Scopus)


The photoluminescence linewidths and excition lifetimes of free excitons in GaAs/AlGaAs multiple quantum wells were systematically investigated as a function of temperature, quantum well width, and carrier density. The experimental results showed that the exciton decay processes were strongly related to the linewidth of the exciton and the exciton binding energy.

Original languageEnglish
Pages (from-to)387-393
Number of pages7
JournalOptical and Quantum Electronics
Issue number5
Publication statusPublished - 1995 May 1


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this